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Symmetries and the polarized optical spectra of exciton complexes in quantum dots

Physical review letters, 2011-09, Vol.107 (12), p.127403-127403, Article 127403

2011

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Spectral change of intermediate band luminescence in GaP:N due to below‐gap excitation: Discrimination from thermal activation

Physica Status Solidi. B: Basic Solid State Physics, 2017-02, Vol.254 (2), p.np-n/a

2017

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Spectral signatures of high-symmetry quantum dots and effects of symmetry breaking

New journal of physics, 2015-10, Vol.17 (10), p.103017

2015

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Excitons and biexcitons in InGaN quantum dot like localization centers

Nanotechnology, 2014-12, Vol.25 (49), p.495702-495702

2014

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Improvement of Crystalline and Photoluminescence of Atomic Layer Deposited m‑Plane ZnO Epitaxial Films by Annealing Treatment

Crystal growth & design, 2012-10, Vol.12 (10), p.4745-4751

2012

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Recombination processes in Mg doped wurtzite InN films with p- and n-type conductivity

AIP advances, 2019-01, Vol.9 (1), p.015114-015114-7

2019

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Dynamic characteristics of the exciton and the biexciton in a single InGaN quantum dot

Applied physics letters, 2012-08, Vol.101 (6), p.61910

2012

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InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids

Nanotechnology, 2012-08, Vol.23 (30), p.305708-305708

2012

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Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD

Journal of crystal growth, 2013-01, Vol.363, p.287-293

2013

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Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy

Applied surface science, 2006, Vol.252 (15), p.5525-5529

2006

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Linear polarized photoluminescence from GaN quantum dots imbedded in AlN matrix

Physica status solidi. C, 2010-07, Vol.7 (7-8), p.2227-2229

2010

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Polarized photoluminescence study of free and bound excitons in free-standing GaN

Physical review. B, Condensed matter and materials physics, 2004-07, Vol.70 (3), p.035210.1-035210.4, Article 035210

2004

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Electronic states tuning of InAs self-assembled quantum dots

Applied physics letters, 1998-06, Vol.72 (24), p.3172-3174

1998

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Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots

Applied physics letters, 2000-08, Vol.77 (6), p.812-814

2000

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Determination of critical diameters for intrinsic carrier diffusion-length of GaN nanorods with cryo-scanning near-field optical microscopy

Scientific reports, 2016-02, Vol.6 (1), p.21482-21482, Article 21482

2016

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Properties of shallow donors in ZnMgO epilayers grown by metal organic chemical vapor deposition

Journal of applied physics, 2014-11, Vol.116 (18), p.183508

2014

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Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures

Physica Status Solidi (b), 2003-05, Vol.237 (1), p.353-364

2003

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Polarized emission and excitonic fine structure energies of InGaN quantum dots

Physica. B, Condensed matter, 2012-05, Vol.407 (10), p.1553-1555

2012

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Size dependent biexciton binding energies in GaN quantum dots

Applied physics letters, 2011-12, Vol.99 (25), p.251903-251903-3

2011

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Nanointegration of ZnO with Si and SiC

Physica. B, Condensed matter, 2009-12, Vol.404 (22), p.4359-4363

2009

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Spatially direct and indirect transitions observed for Si/Ge quantum dots

Applied physics letters, 2003-06, Vol.82 (26), p.4785-4787

2003

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On the polarized emission from exciton complexes in GaN quantum dots

Applied physics letters, 2012-01, Vol.100 (2), p.021901-021901-4

2012

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Atomic and energy structure of InAs/AlAs quantum dots

Physical review. B, Condensed matter and materials physics, 2008-08, Vol.78 (8), Article 085323

2008

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Photoluminescence study of basal plane stacking faults in ZnO nanowires

Physica. B, Condensed matter, 2014-04, Vol.439, p.50-53

2014

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Recombination dynamics of a localized exciton bound at basal stacking faults within the m -plane ZnO film

Applied physics letters, 2014-07, Vol.105 (1)

2014

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Symmetries and the polarized optical spectra of exciton complexes in quantum dots

Spectral change of intermediate band luminescence in GaP:N due to below‐gap excitation: Discrimination from thermal activation

Spectral signatures of high-symmetry quantum dots and effects of symmetry breaking

Excitons and biexcitons in InGaN quantum dot like localization centers

Improvement of Crystalline and Photoluminescence of Atomic Layer Deposited m‑Plane ZnO Epitaxial Films by Annealing Treatment

Recombination processes in Mg doped wurtzite InN films with p- and n-type conductivity

Dynamic characteristics of the exciton and the biexciton in a single InGaN quantum dot

InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids

Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD

Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy

Linear polarized photoluminescence from GaN quantum dots imbedded in AlN matrix

Polarized photoluminescence study of free and bound excitons in free-standing GaN

Electronic states tuning of InAs self-assembled quantum dots

Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots

Determination of critical diameters for intrinsic carrier diffusion-length of GaN nanorods with cryo-scanning near-field optical microscopy

Properties of shallow donors in ZnMgO epilayers grown by metal organic chemical vapor deposition

Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures

Polarized emission and excitonic fine structure energies of InGaN quantum dots

Size dependent biexciton binding energies in GaN quantum dots

Nanointegration of ZnO with Si and SiC

Spatially direct and indirect transitions observed for Si/Ge quantum dots

On the polarized emission from exciton complexes in GaN quantum dots

Atomic and energy structure of InAs/AlAs quantum dots

Photoluminescence study of basal plane stacking faults in ZnO nanowires

Recombination dynamics of a localized exciton bound at basal stacking faults within the m -plane ZnO film

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