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Enhancing leakage suppression in carbon-rich silicon junctions

IEEE electron device letters, 2006-06, Vol.27 (6), p.442-444

2006

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Electrical Properties of ITO/Crystalline-Silicon Contact at Different Deposition Temperatures

IEEE electron device letters, 2012-03, Vol.33 (3), p.327-329

2012

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GaN on Engineered Bulk Silicon Power Integration Platform with Avalanche Capability Enabled by Built-in Si PN Junctions

IEEE electron device letters, 2022-11, Vol.43 (11), p.1-1

2022

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Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

IEEE electron device letters, 2017-08, Vol.38 (8), p.1097-1100

2017

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Fabrication and Characterization of Kilovolt p-Type SiC JBS Diodes With Enhanced Current Capability and Electroluminescence Phenomenon

IEEE electron device letters, 2024-09, Vol.45 (9), p.1566-1569

2024

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Low-Loss Si-Substrates Enhanced Using Buried PN Junctions for RF Applications

IEEE electron device letters, 2019-05, Vol.40 (5), p.690-693

2019

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Temperature dependence of betavoltaic cell performance of diamond pn junction diode

IEEE electron device letters, 2024-01, Vol.45 (1), p.1-1

2024

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A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension

IEEE electron device letters, 2016-12, Vol.37 (12), p.1609-1612

2016

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Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination

IEEE electron device letters, 2019-06, Vol.40 (6), p.941-944

2019

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Top-Down Fabricated Reconfigurable FET With Two Symmetric and High-Current On-States

IEEE electron device letters, 2020-07, Vol.41 (7), p.1110-1113

2020

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Esaki Diode in Undoped Silicon Film

IEEE electron device letters, 2019-09, Vol.40 (9), p.1346-1349

2019

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Wafer-Scale Deep UV Si Photodiodes Based on Ultra-Shallow Junction

IEEE electron device letters, 2024-06, Vol.45 (6), p.944-947

2024

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Zero-Process-Change SiGe Heterojunction Avalanche Photodiode for High-Speed, High-Gain Detection Near the Silicon Band Edge

IEEE electron device letters, 2021-09, Vol.42 (9), p.1260-1263

2021

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X-ray detector with internal gain based on a SiC npn structure

IEEE electron device letters, 2024-08, p.1-1

2024

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NPN SiGe Hetero Junction Transistor latch-up memory selector

IEEE electron device letters, 2023-04, Vol.44 (4), p.1-1

2023

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Analytical Calculation of Breakdown Voltage for Dielectric RESURF Power Devices

IEEE electron device letters, 2017-06, Vol.38 (6), p.767-770

2017

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Integration of Non-Filamentary Pr0.7Ca0.3MnO3- Based Memristor With Silicon-PN Junction

IEEE electron device letters, 2023-05, Vol.44 (5), p.741-744

2023

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Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit

IEEE electron device letters, 2019-01, Vol.40 (1), p.75-78

2019

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1.43 kV 4H-SiC Lateral Junction Barrier Schottky Diode With High BFOM (390 MW/cm2)

IEEE electron device letters, 2024-08, Vol.45 (8), p.1492-1495

2024

Volltextzugriff (PDF)

Ultra-Low Noise Schottky Junction Tri-Gate Silicon Nanowire FET on Bonded Silicon-on-Insulator Substrate

IEEE electron device letters, 2021-04, Vol.42 (4), p.469-472

2021

Volltextzugriff (PDF)

Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling Perspectives

IEEE electron device letters, 2022-06, Vol.43 (6), p.958-961

2022

Volltextzugriff (PDF)

Analysis of Degradation Mechanism in Poly-Si TFTs under Dynamic Gate Voltage Stress with Short Pulse Width Duration

IEEE electron device letters, 2024-02, Vol.45 (2), p.1-1

2024

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Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

IEEE electron device letters, 2015-11, Vol.36 (11), p.1180-1182

2015

Volltextzugriff (PDF)

Graphene-Silicon-Based High-Sensitivity and Broadband Phototransistor

IEEE electron device letters, 2018-02, Vol.39 (2), p.216-219

2018

Volltextzugriff (PDF)

Current driving Er-doped electroluminescence devices with long-term reliability

IEEE electron device letters, 2023-03, Vol.44 (3), p.1-1

2023

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Enhancing leakage suppression in carbon-rich silicon junctions

Electrical Properties of ITO/Crystalline-Silicon Contact at Different Deposition Temperatures

GaN on Engineered Bulk Silicon Power Integration Platform with Avalanche Capability Enabled by Built-in Si PN Junctions

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

Fabrication and Characterization of Kilovolt p-Type SiC JBS Diodes With Enhanced Current Capability and Electroluminescence Phenomenon

Low-Loss Si-Substrates Enhanced Using Buried PN Junctions for RF Applications

Temperature dependence of betavoltaic cell performance of diamond pn junction diode

A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension

Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination

Top-Down Fabricated Reconfigurable FET With Two Symmetric and High-Current On-States

Esaki Diode in Undoped Silicon Film

Wafer-Scale Deep UV Si Photodiodes Based on Ultra-Shallow Junction

Zero-Process-Change SiGe Heterojunction Avalanche Photodiode for High-Speed, High-Gain Detection Near the Silicon Band Edge

X-ray detector with internal gain based on a SiC npn structure

NPN SiGe Hetero Junction Transistor latch-up memory selector

Analytical Calculation of Breakdown Voltage for Dielectric RESURF Power Devices

Integration of Non-Filamentary Pr0.7Ca0.3MnO3- Based Memristor With Silicon-PN Junction

Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit

1.43 kV 4H-SiC Lateral Junction Barrier Schottky Diode With High BFOM (390 MW/cm2)

Ultra-Low Noise Schottky Junction Tri-Gate Silicon Nanowire FET on Bonded Silicon-on-Insulator Substrate

Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling Perspectives

Analysis of Degradation Mechanism in Poly-Si TFTs under Dynamic Gate Voltage Stress with Short Pulse Width Duration

Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

Graphene-Silicon-Based High-Sensitivity and Broadband Phototransistor

Current driving Er-doped electroluminescence devices with long-term reliability

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