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Emerging Memory Technologies for Data Storage and Brain-Inspired Computation: A Global View with Indian Research Insights with a Focus on Resistive Memories
National Academy of Sciences, India. Proceedings. Section A. Physical Sciences, 2023-09, Vol.93 (3), p.459-476
2023
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PrxCa1−xMnO3 based stochastic neuron for Boltzmann machine to solve “maximum cut” problem
APL materials, 2019-09, Vol.7 (9), p.091112-091112-11
2019
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Integration of Non-Filamentary Pr 0.7 Ca 0.3 MnO 3 – Based Memristor With Silicon-PN Junction
IEEE electron device letters, 2023-05, Vol.44 (5), p.741-744
2023
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Integration of Non-Filamentary Pr0.7Ca0.3MnO3- Based Memristor With Silicon-PN Junction
IEEE electron device letters, 2023-05, Vol.44 (5), p.741-744
2023
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Investigating Transient Characteristics of Volatile Hysteresis and Self-Heating of PrMnO3-Based RRAM
IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5520-5525
2020
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Evolution of Ferroelectricity With Annealing Temperature and Thickness in Sputter Deposited Undoped HfO 2 on Silicon
IEEE transactions on electron devices, 2023-11, Vol.70 (11), p.6034-6041
2023
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Investigating Transient Characteristics of Volatile Hysteresis and Self-Heating of PrMnO 3 -Based RRAM
IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5520-5525
2020
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Interlayer-Engineered Local Epitaxial Templating Induced Enhancement in Polarization (2 P r > 70 μ C/cm 2 ) in Hf 0.5 Zr 0.5 O 2 Thin Films
IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.3536-3541
2023
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Interlayer-Engineered Local Epitaxial Templating Induced Enhancement in Polarization (2 \textit} > 70 \mu C/cm ^} ) in Hf } Zr } O } Thin Films
IEEE transactions on electron devices, 2023-05, p.1-6
2023
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Reaction-Drift Model for Switching Transients in Pr₀.₇Ca₀.₃MnO₃-Based Resistive RAM
IEEE transactions on electron devices, 2020-09, Vol.67 (9), p.3610-3617
2020
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Process-Voltage-Temperature Variability Estimation of Tunneling Current for Band-to-Band-Tunneling-Based Neuron
IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.752-758
2024
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Evolution of Ferroelectricity With Annealing Temperature and Thickness in Sputter Deposited Undoped HfO } on Silicon
IEEE transactions on electron devices, 2023-10, p.1-8
2023
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Understanding the Region of Resistance Change in Pr0.7Ca0.3MnO3 RRAM
ACS applied electronic materials, 2020-07, Vol.2 (7), p.2026-2031
2020
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Highly oriented crystalline si on epitaxial Gd2O3/Si(111) substrate using low-cost Radio Frequency sputtering for Silicon on Insulator application
Thin solid films, 2024-03, Vol.793, Article 140272
2024
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FeFET-Based MirrorBit Cell for High-Density NVM Storage
IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2380
2024
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Evolution of Ferroelectricity With Annealing Temperature and Thickness in Sputter Deposited Undoped HfO2 on Silicon
IEEE transactions on electron devices, 2023-11, Vol.70 (11), p.6034
2023
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Stochastic learning in deep neural networks based on nanoscale PCMO device characteristics
Neurocomputing (Amsterdam), 2018-12, Vol.321, p.227-236
2018
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Understanding the Region of Resistance Change in Pr 0.7 Ca 0.3 MnO 3 RRAM
ACS applied electronic materials, 2020-07, Vol.2 (7), p.2026-2031
2020
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A Dual-Slope-Based Capacitance-to-Time Signal Conditioning Circuit for Leaky Capacitive Sensors
IEEE transactions on instrumentation and measurement, 2021, Vol.70, p.1-8
2021
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Limitations on Pitch Design due to Thermal Crosstalk in Pr1-xCaxMnO3 RRAM Crossbar Arrays
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2023, p.25-28
2023
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Thermal Engineering of Volatile Switching in PrMnO3 RRAM: Non-Linearity in DC IV Characteristics and Transient Switching Speed
2020 Device Research Conference (DRC), 2020, p.1-2
2020
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Fundamental Limit on Network Size Scaling of Oscillatory Neural Networks due to PrMnO3 based Oscillator Phase Noise
2019 Device Research Conference (DRC), 2019, p.195-196
2019
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A Compact PrMnO3 Based Oscillator as an Alternative to CMOS Ring Oscillator in a Smart Temperature Sensor
2018 IEEE SENSORS, 2018, p.1-4
2018
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Pr x Ca 1 − x MnO 3 based stochastic neuron for Boltzmann machine to solve “maximum cut” problem
APL materials, 2019-09, Vol.7 (9)
2019
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Enhancement in Bipolar Conductance Linearity by One Transistor - One Resistor (1T1R) cell with Non-Filamentary PCMO-RRAM as Synapse for Neural Networks
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2023, p.1-3
2023
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