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Basic research on polishing with ice bonded nanoabrasive pad

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2009-05, Vol.27 (3), p.1514-1519

2009

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Crystalline defect formation on aluminum bond pads during CMOS wafer storage and process strategies for defect elimination

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2018-05, Vol.36 (3)

2018

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Investigation of the nonuniformities in polyurethane chemical mechanical planarization pads

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-01, Vol.24 (1), p.25-33

2006

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Programmed self-assembly of microscale components using biomolecular recognition through the avidin–biotin interaction

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2014-11, Vol.32 (6)

2014

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Enhancement of electroluminescence in GaN-based light-emitting diodes using an efficient current blocking layer

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2005-11, Vol.23 (6), p.2284-2287

2005

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Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2020-05, Vol.38 (3)

2020

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Long term field emission current stability characterization of planar field emitter devices

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2021-09, Vol.39 (5)

2021

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Imprinting polymer film on patterned substrates

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003-11, Vol.21 (6), p.2742-2748

2003

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Long nanoscale gaps on III–V substrates by electron beam lithography

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012-11, Vol.30 (6)

2012

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Gold microelectrodes fabricated by a print-and-imprint method using laser-drilled polyimide through-hole masks

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2017-11, Vol.35 (6)

2017

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Normally-off matrix layout p-GaN gate AlGaN/GaN power HEMT with a through-substrate via process

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2016-03, Vol.34 (2)

2016

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Novel approach to improve heat dissipation of AlGaN/GaN high electron mobility transistors with a Cu filled via under device active area

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2014-11, Vol.32 (6)

2014

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Application of inline high resolution x-ray diffraction in monitoring Si/SiGe and conventional Si in SOI fin-shaped field effect transistor processes

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012-07, Vol.30 (4)

2012

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One-step transfer printing of patterned nanogap electrodes

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2019-07, Vol.37 (4)

2019

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Multiple replication of hierarchical structures from polymer masters with anisotropy

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2019-11, Vol.37 (6)

2019

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Current spreading of III-nitride light-emitting diodes using plasma treatment

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2007-07, Vol.25 (4), p.1280-1283

2007

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Fabrication of gated CuO nanowire field emitter arrays for application in field emission display

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-05, Vol.28 (3), p.558-561

2010

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InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-09, Vol.28 (5), p.908-911

2010

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Investigation of polarity effects on the degradation of Pd/Ti/Pt ohmic contacts to p -type SiC under current stress

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-11, Vol.29 (6)

2011

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Fabrication of hundreds of field effect transistors on a single carbon nanotube for basic studies and molecular devices

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-11, Vol.31 (6), p.6

2013

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Sensitivity study of micro four-point probe measurements on small samples

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-01, Vol.28 (1), p.C1-C1C40

2010

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Stenciled conducting bismuth nanowires

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-01, Vol.28 (1), p.169-172

2010

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SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2008-03, Vol.26 (2), p.487-494

2008

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Fabrication of metal nanowires by ion-beam irradiation of oxides through high aspect ratio resist masks

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-03, Vol.29 (2)

2011

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Shallow As dose measurements of patterned wafers with secondary ion mass spectrometry and low energy electron induced x-ray emission spectroscopy

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-01, Vol.28 (1), p.C1-C1C58

2010

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Basic research on polishing with ice bonded nanoabrasive pad

Crystalline defect formation on aluminum bond pads during CMOS wafer storage and process strategies for defect elimination

Investigation of the nonuniformities in polyurethane chemical mechanical planarization pads

Programmed self-assembly of microscale components using biomolecular recognition through the avidin–biotin interaction

Enhancement of electroluminescence in GaN-based light-emitting diodes using an efficient current blocking layer

Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme

Long term field emission current stability characterization of planar field emitter devices

Imprinting polymer film on patterned substrates

Long nanoscale gaps on III–V substrates by electron beam lithography

Gold microelectrodes fabricated by a print-and-imprint method using laser-drilled polyimide through-hole masks

Normally-off matrix layout p-GaN gate AlGaN/GaN power HEMT with a through-substrate via process

Novel approach to improve heat dissipation of AlGaN/GaN high electron mobility transistors with a Cu filled via under device active area

Application of inline high resolution x-ray diffraction in monitoring Si/SiGe and conventional Si in SOI fin-shaped field effect transistor processes

One-step transfer printing of patterned nanogap electrodes

Multiple replication of hierarchical structures from polymer masters with anisotropy

Current spreading of III-nitride light-emitting diodes using plasma treatment

Fabrication of gated CuO nanowire field emitter arrays for application in field emission display

InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates

Investigation of polarity effects on the degradation of Pd/Ti/Pt ohmic contacts to p -type SiC under current stress

Fabrication of hundreds of field effect transistors on a single carbon nanotube for basic studies and molecular devices

Sensitivity study of micro four-point probe measurements on small samples

Stenciled conducting bismuth nanowires

SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices

Fabrication of metal nanowires by ion-beam irradiation of oxides through high aspect ratio resist masks

Shallow As dose measurements of patterned wafers with secondary ion mass spectrometry and low energy electron induced x-ray emission spectroscopy

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