Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs
2008
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- Autor(en) / Beteiligte
- Titel
- Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs
- Ist Teil von
- IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.2106-2112
- Ort / Verlag
- New York: IEEE
- Erscheinungsjahr
- 2008
- Quelle
- IEEE Electronic Library (IEL)
- Beschreibungen/Notizen
- Displacement-damage induced degradation in AlGaN/AlN/GaN HEMTs with polarization charge induced 2DEGs is examined using simulations and experiments. Carrier removal in the unintentionally doped AlGaN layer changes the space charge in the structure and this changes the band bending. The band bending decreases the 2DEG density, which in turn reduces the drain current in the device. The effect of the defect energy levels on the 2DEG density is also studied. The interplay between carrier removal, mobility degradation, and the charged defects is analyzed and quantified.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0018-9499eISSN: 1558-1578DOI: 10.1109/TNS.2008.2001705Titel-ID: cdi_ieee_primary_4636888
- Format
- –
- Schlagworte
- Aluminum gallium nitride, Aluminum gallium nitrides, Aluminum nitride, Deep level traps, Defects, Degradation, Density, Devices, displacement damage, Electrostatics, Energy states, Gallium nitride, Gallium nitrides, GaN, HEMTs, high electron mobility transistor (HEMT), High electron mobility transistors, MODFETs, Polarization, polarization charge, proton radiation, Protons, Space charge