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As-deposited ferroelectric HZO on a III–V semiconductor

Applied physics letters, 2022-07, Vol.121 (1), p.012901

2022

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Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode

IEEE electron device letters, 2019-11, Vol.40 (11), p.1744-1747

2019

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Degradation of Nonhysteretic Switching in HZO-Al2O3 Stacks Due to Positive Unipolar Stress

IEEE transactions on electron devices, 2023-12, Vol.71 (2), p.1-6

2023

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Phase field modeling of domain dynamics and polarization accumulation in ferroelectric HZO

Applied physics letters, 2019-05, Vol.114 (20)

2019

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MgO/HZO Based Ferroelectric Tunnel Junctions for Neuromorphic Computing Applications

IEEE electron device letters, 2023-09, Vol.44 (9), p.1-1

2023

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Electrical Investigation of Wake-Up in High Endurance Fatigue-Free La and Y Doped HZO Metal-Ferroelectric-Metal Capacitors

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4744-4749

2022

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HZO-based FerroNEMS MAC for in-memory computing

Applied physics letters, 2022-11, Vol.121 (19)

2022

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Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors

IEEE transactions on electron devices, 2020-02, Vol.67 (2), p.745-750

2020

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Excellent HZO ferroelectric thin films on flexible PET substrate

Journal of alloys and compounds, 2022-10, Vol.919, p.165872, Article 165872

2022

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Effects of shear strain on HZO ferroelectric orthorhombic phases

Applied physics letters, 2023-09, Vol.123 (11)

2023

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A Steep Slope MBE-Grown Thin p-Ge Channel FETs on Bulk Ge-on-Si Using HZO Internal Voltage Amplification

IEEE transactions on electron devices, 2022-05, Vol.69 (5), p.2725-2731

2022

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The Electrode‐Ferroelectric Interface as the Primary Constraint on Endurance and Retention in HZO‐Based Ferroelectric Capacitors

Advanced functional materials, 2023-10, Vol.33 (43)

2023

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Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

Applied physics letters, 2018-05, Vol.112 (22)

2018

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High-performance HZO/InAlN/GaN MISHEMTs for Ka-band application

Semiconductor science and technology, 2023-03, Vol.38 (3), p.35011

2023

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Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing

ACS applied materials & interfaces, 2022-09, Vol.14 (38), p.43463-43473

2022

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Three-terminal vertical ferroelectric synaptic barristor enabled by HZO/graphene heterostructure with rebound depolarization

Journal of alloys and compounds, 2023-11, Vol.965, p.171247, Article 171247

2023

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Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.1-8

2023

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First Experimental Demonstration of Robust HZO/β-Ga₂O₃ Ferroelectric Field-Effect Transistors as Synaptic Devices for Artificial Intelligence Applications in a High-Temperature Environment

IEEE transactions on electron devices, 2021-05, Vol.68 (5), p.2515-2521

2021

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Optimizing Ferroelectric and Interface Layers in HZO-Based FTJs for Neuromorphic Applications

IEEE transactions on electron devices, 2022-02, Vol.69 (2), p.808-815

2022

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Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization

Applied physics letters, 2020-02, Vol.116 (6)

2020

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Impact of deposition temperature on electrical properties of HZO-based FeRAM

Journal of applied physics, 2024-02, Vol.135 (6)

2024

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Impact of asymmetric electrodes on ferroelectricity of sub-10 nm HZO thin films

Nanotechnology, 2024-03, Vol.35 (10), p.105201

2024

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Stacked HZO/α-In2Se3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.3071

2023

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An energy efficient reservoir computing system based on HZO memcapacitive devices

Applied physics letters, 2023-09, Vol.123 (12)

2023

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Stacked HZO/ \alpha -In } Se } Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window

IEEE transactions on electron devices, 2023-05, p.1-5

2023

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As-deposited ferroelectric HZO on a III–V semiconductor

Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode

Degradation of Nonhysteretic Switching in HZO-Al2O3 Stacks Due to Positive Unipolar Stress

Phase field modeling of domain dynamics and polarization accumulation in ferroelectric HZO

MgO/HZO Based Ferroelectric Tunnel Junctions for Neuromorphic Computing Applications

Electrical Investigation of Wake-Up in High Endurance Fatigue-Free La and Y Doped HZO Metal-Ferroelectric-Metal Capacitors

HZO-based FerroNEMS MAC for in-memory computing

Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors

Excellent HZO ferroelectric thin films on flexible PET substrate

Effects of shear strain on HZO ferroelectric orthorhombic phases

A Steep Slope MBE-Grown Thin p-Ge Channel FETs on Bulk Ge-on-Si Using HZO Internal Voltage Amplification

The Electrode‐Ferroelectric Interface as the Primary Constraint on Endurance and Retention in HZO‐Based Ferroelectric Capacitors

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

High-performance HZO/InAlN/GaN MISHEMTs for Ka-band application

Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing

Three-terminal vertical ferroelectric synaptic barristor enabled by HZO/graphene heterostructure with rebound depolarization

Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness

First Experimental Demonstration of Robust HZO/β-Ga₂O₃ Ferroelectric Field-Effect Transistors as Synaptic Devices for Artificial Intelligence Applications in a High-Temperature Environment

Optimizing Ferroelectric and Interface Layers in HZO-Based FTJs for Neuromorphic Applications

Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization

Impact of deposition temperature on electrical properties of HZO-based FeRAM

Impact of asymmetric electrodes on ferroelectricity of sub-10 nm HZO thin films

Stacked HZO/α-In2Se3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window

An energy efficient reservoir computing system based on HZO memcapacitive devices

Stacked HZO/ \alpha -In } Se } Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window

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