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Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer

Applied physics letters, 2017-05, Vol.110 (20)

2017

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Status and Prospects of ZnO-Based Resistive Switching Memory Devices

Nanoscale Research Letters, 2016-12, Vol.11 (1), p.368-31, Article 368

2016

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Overview of emerging nonvolatile memory technologies

Nanoscale research letters, 2014-09, Vol.9 (1), p.526-526, Article 526

2014

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Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications

Applied physics letters, 2021-03, Vol.118 (11)

2021

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Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications

Nanotechnology, 2020-04, Vol.31 (26), p.26LT01-26LT01

2020

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Fully visible light controlled neuro-synaptic ReRAM device based on metal oxide heterojunction

Applied physics letters, 2024-03, Vol.124 (13)

2024

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Enhanced Linearity in CBRAM Synapse by Post Oxide Deposition Annealing for Neuromorphic Computing Applications

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5578-5584

2021

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Impacts of Co doping on ZnO transparent switching memory device characteristics

Applied physics letters, 2016-05, Vol.108 (18)

2016

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Oxygen Vacancy Transition in HfOx‐Based Flexible, Robust, and Synaptic Bi‐Layer Memristor for Neuromorphic and Wearable Applications

Advanced materials technologies, 2022-07, Vol.7 (7), p.n/a

2022

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A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure

Applied physics letters, 2016-04, Vol.108 (15)

2016

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Hexanoyl chitosan/ENR25 blend polymer electrolyte system for electrical double layer capacitor

Polymers for advanced technologies, 2019-03, Vol.30 (3), p.726-735

2019

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Fully Photon Controlled Synaptic Memristor for Neuro‐Inspired Computing

Advanced electronic materials, 2023-03, Vol.9 (3), p.n/a

2023

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Role of precursors mixing sequence on the properties of CoMn2O4 cathode materials and their application in pseudocapacitor

Scientific reports, 2019-11, Vol.9 (1), p.1-12, Article 16852

2019

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Porous carbon materials derived from areca palm leaves for high performance symmetrical solid-state supercapacitors

Journal of materials science, 2020-08, Vol.55 (24), p.10751-10764

2020

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Impact of barrier layer on HfO2-based conductive bridge random access memory

Applied physics letters, 2019-03, Vol.114 (9)

2019

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Sensing performance of gas sensors fabricated from controllably grown ZnO-based nanorods on seed layers

Journal of materials science, 2020-07, Vol.55 (21), p.8850-8860

2020

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Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices

Applied physics letters, 2020-08, Vol.117 (7)

2020

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Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance

Applied physics letters, 2014-02, Vol.104 (6)

2014

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Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure

Applied physics letters, 2021-04, Vol.118 (17)

2021

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CMOS-Compatible Memristor for Optoelectronic Neuromorphic Computing

Nanoscale research letters, 2022-11, Vol.17 (1), p.105-105, Article 105

2022

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Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM Devices

IEEE electron device letters, 2015-11, Vol.36 (11), p.1146-1148

2015

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ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices

APL materials, 2019-05, Vol.7 (5), p.051108-051108-7

2019

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Growth, dielectric properties, and memory device applications of ZrO2 thin films

Thin solid films, 2013-03, Vol.531, p.1-20

2013

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Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture

Applied physics letters, 2015-11, Vol.107 (20)

2015

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High energy density asymmetric pseudocapacitors fabricated by graphene/carbon nanotube/MnO2 plus carbon nanotubes nanocomposites electrode

Journal of power sources, 2014-08, Vol.259, p.145-153

2014

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Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

Overview of emerging nonvolatile memory technologies

Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications

Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications

Fully visible light controlled neuro-synaptic ReRAM device based on metal oxide heterojunction

Enhanced Linearity in CBRAM Synapse by Post Oxide Deposition Annealing for Neuromorphic Computing Applications

Impacts of Co doping on ZnO transparent switching memory device characteristics

Oxygen Vacancy Transition in HfOx‐Based Flexible, Robust, and Synaptic Bi‐Layer Memristor for Neuromorphic and Wearable Applications

A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure

Hexanoyl chitosan/ENR25 blend polymer electrolyte system for electrical double layer capacitor

Fully Photon Controlled Synaptic Memristor for Neuro‐Inspired Computing

Role of precursors mixing sequence on the properties of CoMn2O4 cathode materials and their application in pseudocapacitor

Porous carbon materials derived from areca palm leaves for high performance symmetrical solid-state supercapacitors

Impact of barrier layer on HfO2-based conductive bridge random access memory

Sensing performance of gas sensors fabricated from controllably grown ZnO-based nanorods on seed layers

Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices

Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance

Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure

CMOS-Compatible Memristor for Optoelectronic Neuromorphic Computing

Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM Devices

ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices

Growth, dielectric properties, and memory device applications of ZrO2 thin films

Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture

High energy density asymmetric pseudocapacitors fabricated by graphene/carbon nanotube/MnO2 plus carbon nanotubes nanocomposites electrode

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