UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 40

Sortiert nach

Performance of ultra-thin HfO2-based MIM devices after oxygen modulation and post-metallization annealing in N2

Physica status solidi. A, Applications and materials science, 2016-07, Vol.213 (7), p.1807-1813

2016

Link zum Volltext

Verfügbarkeit prüfen

High-k HfxZr1-xO₂ Ferroelectric Insulator by Utilizing High Pressure Anneal

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2489-2494

2020

Link zum Volltext
Volltext

Optimizing annealing steps for crystalline silicon solar cells with screen printed front side metallization and an oxide-passivated rear surface with local contacts

Progress in photovoltaics, 2009-12, Vol.17 (8), p.554-566

2009

Link zum Volltext

Verfügbarkeit prüfen

Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN

Semiconductor science and technology, 2023-01, Vol.38 (1)

2023

Link zum Volltext

Verfügbarkeit prüfen

Impact of post metallization annealing (PMA) on the electrical properties of Ge nMOSFETs with ZrO2 dielectric

Solid-state electronics, 2022-04, Vol.190, p.108240, Article 108240

2022

Link zum Volltext

Verfügbarkeit prüfen

Effects of surface treatment and annealing for Au/Ni/n-GaN Schottky barrier diodes

Japanese Journal of Applied Physics, 2021-05, Vol.60 (5), p.56503

2021

Link zum Volltext

Verfügbarkeit prüfen

1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.29-34

2022

Link zum Volltext

Verfügbarkeit prüfen

Investigation of impact of post-metallization annealing on reliability of 65nm NOR floating-gate flash memories

Solid-state electronics, 2016-12, Vol.126, p.125-129

2016

Link zum Volltext

Verfügbarkeit prüfen

Investigation of flat band voltage shift in recessed-gate GaN MOSHFETs with post-metallization-annealing in oxygen atmosphere

Semiconductor science and technology, 2015-11, Vol.30 (11), p.115008

2015

Link zum Volltext

Verfügbarkeit prüfen

Annealing Impact on Interface Properties of Sprayed Al2O3-Based MIS Structure for Silicon Surface Passivation

Journal of electronic materials, 2019-02, Vol.48 (2), p.916-924

2019

Link zum Volltext

Verfügbarkeit prüfen

Enhancing the Performance of E-mode AlGaN/GaN HEMTs with Recessed Gates through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

IEEE open journal of nanotechnology, 2023-01, Vol.4, p.1-6

2023

Link zum Volltext

Verfügbarkeit prüfen

Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.229-235

2021

Link zum Volltext

Verfügbarkeit prüfen

Investigation of impact of post-metallization annealing on reliability of 65 nm NOR floating-gate flash memories

Solid-state electronics, 2016-12, Vol.126, p.125-129

2016

Link zum Volltext

Verfügbarkeit prüfen

Ferroelectric Hafnium Nitride Thin Films Directly Formed on Si(100) Substrate

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.1036-1040

2021

Link zum Volltext

Verfügbarkeit prüfen

Effects of post-metallisation annealing on surface-interfacial and electrical properties of HfO2/Ge stacks modified in situ with SiO2 interfacial layer

Materials research express, 2019-08, Vol.6 (8)

2019

Link zum Volltext

Verfügbarkeit prüfen

Effect of post deposition annealing and post metallization annealing on electrical and structural characteristics of Pd/Al2O3/6H-SiC MIS capacitors

Microelectronics international, 2018-01, Vol.35 (2), p.65-73

2018

Link zum Volltext

Verfügbarkeit prüfen

Improved interface characteristics of Mo/SiO2/4H-SiC metal-oxide-semiconductor with post-metallization annealing

Journal of the Korean Physical Society, 2018, 72(1), , pp.166-170

2018

Link zum Volltext

Verfügbarkeit prüfen

Material and Device Characteristics of Metamorphic MOSHEMTs Grown on GaAs and Si Substrates by MOCVD

IEEE transactions on electron devices, 2013-12, Vol.60 (12), p.4112-4118

2013

Link zum Volltext
Volltext

Effects of sputtering pressure and post-metallization annealing on the physical properties of rf-sputtered Y 2O 3 films

Journal of alloys and compounds, 2011, Vol.509 (19), p.5810-5815

2011

Link zum Volltext

Verfügbarkeit prüfen

Physical understanding of the behavior of silver thick-film contacts on n-type silicon under annealing conditions

Solar energy materials and solar cells, 2009-09, Vol.93 (9), p.1630-1635

2009

Link zum Volltext

Verfügbarkeit prüfen

Electrical Characteristics of Al2O3/TiO2/Al2O3 Nanolaminate MOS Capacitor on p-GaN With Post Metallization Annealing and (NH4)2SX Treatments

IEEE electron device letters, 2009, Vol.30 (9), p.907-909

2009

Link zum Volltext

Verfügbarkeit prüfen

Forming Gas Post Metallization Annealing of Recessed AlGaN/GaN-on-Si MOSHFET

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2015, 15(1), 61, pp.16-21

2015

Link zum Volltext

Verfügbarkeit prüfen

Post Metallization Annealing Characterization of Interface Properties of High-K Dielectrics Stack on Silicon Carbide

Materials science forum, 2009, Vol.600-603, p.771-774

2009

Link zum Volltext

Verfügbarkeit prüfen

Low equivalent oxide thickness of TiO2/GaAs MOS capacitor

Solid-state electronics, 2012-07, Vol.73, p.56-59

2012

Link zum Volltext

Verfügbarkeit prüfen

Effects of sputtering pressure and post-metallization annealing on the physical properties of rf-sputtered Y2O3 films

Journal of alloys and compounds, 2011-05, Vol.509 (19), p.5810-5815

2011

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 40

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(32)
Mit Volltextzugriff
(37)

Publikationsform

Artikel
(35)
Tagungsberichte
(5)

Sprache

Englisch
(40)
Japanisch
(8)

Erscheinungsjahr

n.n

Thema

Science & Technology
(28)
Technology
(26)
Post-Metallization Annealing
(23)
Engineering
(20)
Engineering, Electrical & Electronic
(20)
Physical Sciences
(18)
Physics
(18)
Physics, Applied
(13)
Materials Science
(11)
Post Metallization Annealing
(11)
Annealing
(10)
Materials Science, Multidisciplinary
(10)
Exact Sciences And Technology
(8)
Applied Sciences
(7)
Metallizing
(7)
Physics, Condensed Matter
(7)
Electronic, Optical And Magnetic Materials
(5)
Electronics
(5)
Leakage Current
(5)
Logic Gates
(5)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Performance of ultra-thin HfO2-based MIM devices after oxygen modulation and post-metallization annealing in N2

High-k HfxZr1-xO₂ Ferroelectric Insulator by Utilizing High Pressure Anneal

Optimizing annealing steps for crystalline silicon solar cells with screen printed front side metallization and an oxide-passivated rear surface with local contacts

Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN

Impact of post metallization annealing (PMA) on the electrical properties of Ge nMOSFETs with ZrO2 dielectric

Effects of surface treatment and annealing for Au/Ni/n-GaN Schottky barrier diodes

1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline

Investigation of impact of post-metallization annealing on reliability of 65nm NOR floating-gate flash memories

Investigation of flat band voltage shift in recessed-gate GaN MOSHFETs with post-metallization-annealing in oxygen atmosphere

Annealing Impact on Interface Properties of Sprayed Al2O3-Based MIS Structure for Silicon Surface Passivation

Enhancing the Performance of E-mode AlGaN/GaN HEMTs with Recessed Gates through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization

Investigation of impact of post-metallization annealing on reliability of 65 nm NOR floating-gate flash memories

Ferroelectric Hafnium Nitride Thin Films Directly Formed on Si(100) Substrate

Effects of post-metallisation annealing on surface-interfacial and electrical properties of HfO2/Ge stacks modified in situ with SiO2 interfacial layer

Effect of post deposition annealing and post metallization annealing on electrical and structural characteristics of Pd/Al2O3/6H-SiC MIS capacitors

Improved interface characteristics of Mo/SiO2/4H-SiC metal-oxide-semiconductor with post-metallization annealing

Material and Device Characteristics of Metamorphic MOSHEMTs Grown on GaAs and Si Substrates by MOCVD

Effects of sputtering pressure and post-metallization annealing on the physical properties of rf-sputtered Y 2O 3 films

Physical understanding of the behavior of silver thick-film contacts on n-type silicon under annealing conditions

Electrical Characteristics of Al2O3/TiO2/Al2O3 Nanolaminate MOS Capacitor on p-GaN With Post Metallization Annealing and (NH4)2SX Treatments

Forming Gas Post Metallization Annealing of Recessed AlGaN/GaN-on-Si MOSHFET

Post Metallization Annealing Characterization of Interface Properties of High-K Dielectrics Stack on Silicon Carbide

Low equivalent oxide thickness of TiO2/GaAs MOS capacitor

Effects of sputtering pressure and post-metallization annealing on the physical properties of rf-sputtered Y2O3 films

Suchergebnisse filtern