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True Material Limit of Power Devices-Applied to 2-D Superjunction MOSFET

IEEE transactions on electron devices, 2018-04, Vol.65 (4), p.1432-1439

2018

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IEEE_Xplore

Open-Gate Junction Field Effect Transistor (OG-JFET) for Life Science Applications: Design, Implementation, and Characterization

IEEE sensors journal, 2021-12, Vol.21 (23), p.26503-26514

2021

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IEEE_Xplore

A CMOS-Process-Compatible Low-Voltage Junction-FET With Adjustable Pinch-Off Voltage

IEEE transactions on electron devices, 2017-07, Vol.64 (7), p.2812-2819

2017

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IEEE_Xplore

The Trench Power MOSFET: Part I-History, Technology, and Prospects

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.674-691

2017

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Low-Loss SOI-LIGBT With Triple Deep-Oxide Trenches

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3756-3761

2017

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IEEE_Xplore

Progress in SiC nanowire field-effect-transistors for integrated circuits and sensing applications

Microelectronic engineering, 2022-02, Vol.255, p.111704, Article 111704

2022

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1100 V, 22.9 mΩcm2 4H-SiC RESURF Lateral Double-Implanted MOSFET With Trench Isolation

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5009-5013

2021

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IEEE_Xplore

Numerical Study of SiC MOSFET With Integrated n-/n-Type Poly-Si/SiC Heterojunction Freewheeling Diode

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4571-4576

2021

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IEEE_Xplore

Silicon Waveguide Integrated Germanium JFET Photodetector With Improved Speed Performance

IEEE photonics technology letters, 2011-06, Vol.23 (12), p.765-767

2011

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IEEE_Xplore

JFET Integration Using a Foundry SOI Photonics Platform

Applied sciences, 2019-10, Vol.9 (19), p.3964

2019

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Efficiency Evaluation of the Modular Multilevel Converter Based on Si and SiC Switching Devices for Medium/High-Voltage Applications

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.286-293

2015

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IEEE_Xplore

Design and simulation on improving the reliability of gate oxide in SiC CDMOSFET

Diamond and related materials, 2019-01, Vol.91, p.213-218

2019

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High voltage Si/SiC hybrid switch: An ideal next step for SiC

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2015, p.289-292

2015

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IEEE_Xplore

Novel Electronic Devices in Macroporous Silicon: Design of FET Transistors for Power Applications

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.3065-3071

2011

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IEEE_Xplore

Ionization Readout of CDMS Detectors with Low Power, Low Noise HEMTs

Journal of low temperature physics, 2014-08, Vol.176 (3-4), p.470-475

2014

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Effects of Gate Oxide and Junction Nonuniformity on the DC and Low-Frequency Noise Performance of Four-Gate Transistors

IEEE transactions on electron devices, 2012-02, Vol.59 (2), p.459-467

2012

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IEEE_Xplore

A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs

IEEE transactions on electron devices, 2012-09, Vol.59 (9), p.2546-2549

2012

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IEEE_Xplore

Junction Field Effect Transistors for Nanoelectronics

IEEE transactions on nanotechnology, 2009-11, Vol.8 (6), p.749-757

2009

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IEEE_Xplore

A monolithic field emitter array with a JFET

IEEE transactions on electron devices, 2002-09, Vol.49 (9), p.1665-1668

2002

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IEEE_Xplore

A multimechanism model for photon generation by silicon junctions in avalanche breakdown

IEEE transactions on electron devices, 1999-05, Vol.46 (5), p.1022-1028

1999

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IEEE_Xplore

Performance modeling of RF power MOSFETs

IEEE transactions on electron devices, 1999-08, Vol.46 (8), p.1794-1802

1999

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IEEE_Xplore

Power-saving approach for driving integrated FET gas sensors

2011 IEEE SENSORS Proceedings, 2011, p.1040-1043

2011

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IEEE_Xplore

Constant-resistance deep-level transient spectroscopy in Si and Ge JFET's

IEEE transactions on electron devices, 1999-01, Vol.46 (1), p.204-213

1999

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IEEE_Xplore

Platform for JFET-based sensing of RF MEMS resonators in CMOS technology

2011 International Electron Devices Meeting, 2011, p.20.4.1-20.4.4

2011

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IEEE_Xplore

Microwave performance of ion-implanted InP JFETs

IEEE transactions on electron devices, 1988-12, Vol.35 (12), p.2279-2287

1988

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IEEE_Xplore

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True Material Limit of Power Devices-Applied to 2-D Superjunction MOSFET

Open-Gate Junction Field Effect Transistor (OG-JFET) for Life Science Applications: Design, Implementation, and Characterization

A CMOS-Process-Compatible Low-Voltage Junction-FET With Adjustable Pinch-Off Voltage

The Trench Power MOSFET: Part I-History, Technology, and Prospects

Low-Loss SOI-LIGBT With Triple Deep-Oxide Trenches

Progress in SiC nanowire field-effect-transistors for integrated circuits and sensing applications

1100 V, 22.9 mΩcm2 4H-SiC RESURF Lateral Double-Implanted MOSFET With Trench Isolation

Numerical Study of SiC MOSFET With Integrated n-/n-Type Poly-Si/SiC Heterojunction Freewheeling Diode

Silicon Waveguide Integrated Germanium JFET Photodetector With Improved Speed Performance

JFET Integration Using a Foundry SOI Photonics Platform

Efficiency Evaluation of the Modular Multilevel Converter Based on Si and SiC Switching Devices for Medium/High-Voltage Applications

Design and simulation on improving the reliability of gate oxide in SiC CDMOSFET

High voltage Si/SiC hybrid switch: An ideal next step for SiC

Novel Electronic Devices in Macroporous Silicon: Design of FET Transistors for Power Applications

Ionization Readout of CDMS Detectors with Low Power, Low Noise HEMTs

Effects of Gate Oxide and Junction Nonuniformity on the DC and Low-Frequency Noise Performance of Four-Gate Transistors

A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs

Junction Field Effect Transistors for Nanoelectronics

A monolithic field emitter array with a JFET

A multimechanism model for photon generation by silicon junctions in avalanche breakdown

Performance modeling of RF power MOSFETs

Power-saving approach for driving integrated FET gas sensors

Constant-resistance deep-level transient spectroscopy in Si and Ge JFET's

Platform for JFET-based sensing of RF MEMS resonators in CMOS technology

Microwave performance of ion-implanted InP JFETs

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