UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 30.728

Sortiert nach

A 0.10 /spl mu/m gate length CMOS technology with 30 /spl Aring/ gate dielectric for 1.0 V-1.5 V applications

International Electron Devices Meeting. IEDM Technical Digest, 1997, p.223-226

1997

Link zum Volltext
Volltext

A 0.13- \mu \text CMOS Dynamically Reconfigurable Charge Pump for Electrostatic MEMS Actuation

IEEE transactions on very large scale integration (VLSI) systems, 2017-04, Vol.25 (4), p.1261-1270

2017

Link zum Volltext
Volltext

0.13μm CMOS/DMOS platform technology with novel 8V/9V LDMOS for low voltage high-frequency DC-DC converters

2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010, p.315-318

2010

Link zum Volltext
Volltext

A 0.18 pJ/Conversion Step Hybrid Structure based ADC

2022 2nd Asian Conference on Innovation in Technology (ASIANCON), 2022, p.1-5

2022

Link zum Volltext

Verfügbarkeit prüfen

0.2/spl mu/m gatelength, non-alloyed AlInAs/GaInAs JHEMTs with extrinsic ft=62 GHz

52nd Annual Device Research Conference, 1994, p.153-154

1994

Link zum Volltext

Verfügbarkeit prüfen

0.25 μm emitter InP/InAlGaAs/GaAsSb double heterojunction bipolar transistor with passivation ledge exhibiting a current gain of over 100

Electronics letters, 2014-10, Vol.50 (22), p.1631-1633

2014

Link zum Volltext

Verfügbarkeit prüfen

0.29-/spl mu/m/sup 2/ trench cell technologies for 1G-bit DRAMs with open/folded-bit-line layout and selective growth technique

1995 Symposium on VLSI Technology. Digest of Technical Papers, 1995, p.137-138

1995

Link zum Volltext
Volltext

A 0.3 THz Multi-Beam Extended Interaction Klystron Based on TM10,1,0 Mode Coaxial Coupled Cavity

IEEE access, 2020, Vol.8, p.214383-214391

2020

Link zum Volltext

Verfügbarkeit prüfen

0.35 /spl mu/m, 43 /spl mu//spl Omega/cm/sup 2/, 6 m/spl Omega/ power MOSFET to power future microprocessor

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312), 1999, p.77-80

1999

Link zum Volltext
Volltext

A 0.35 μm 700 V BCD technology with self-isolated and non-isolated ultra-low specific on-resistance DB-nLDMOS

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2013, p.397-400

2013

Link zum Volltext
Volltext

A 0.6-to-1.2 V Scaling Friendly Discrete-Time OTA-Free ΔΣ-ADC for IoT Applications

ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC), 2021, p.219-222

2021

Link zum Volltext

Verfügbarkeit prüfen

1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy

IEEE electron device letters, 2017-08, Vol.38 (8), p.1071-1074

2017

Link zum Volltext
Volltext

1.2 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability

IEEE transactions on power electronics, 2022-01, Vol.37 (1), p.26-30

2022

Link zum Volltext
Volltext

1.2 kV) AlGaN/GaN Monolithic Bidirectional HEMTs With Low On-Resistance (2.54 mΩ ⋅ cm2

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.733

2024

Link zum Volltext

Verfügbarkeit prüfen

1.2 kV GaN/SiC-based Hybrid High Electron Mobility Transistor with Non-destructive Breakdown

2021 IEEE International Electron Devices Meeting (IEDM), 2021, p.36.5.1-36.5.4

2021

Link zum Volltext
Volltext

1.2 kV Pin Diodes with SiCrystal Epiwafer

Materials science forum, 2007, Vol.556-557, p.901-904

2007

Link zum Volltext

Verfügbarkeit prüfen

1.2-kV SiC Trench-Etched Double-Diffused MOS (TED-MOS)

Materials science forum, 2019-07, Vol.963, p.617-620

2019

Link zum Volltext

Verfügbarkeit prüfen

1.2 kV SiC Trench-Gate MOSFETs with Dual Shielding Regions

Materials science forum, 2019-07, Vol.963, p.600-604

2019

Link zum Volltext

Verfügbarkeit prüfen

1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance

IEEE electron device letters, 1999-08, Vol.20 (8), p.428-430

1999

Link zum Volltext
Volltext

1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.2025-2032

2021

Link zum Volltext

Verfügbarkeit prüfen

1.2-MeV Atomic Resolution Holography Electron Microscope

Materia Japan, 2019/06/01, Vol.58(6), pp.334-335

Shinada, Hiroyuki

2019

Link zum Volltext

Verfügbarkeit prüfen

1.2 MeV 原子分解能・ホログラフィー電子顕微鏡の開発

まてりあ, 2019/06/01, Vol.58(6), pp.334-335

品田, 博之

2019

Link zum Volltext

Verfügbarkeit prüfen

1.2 V operation 1.1 W heterojunction FET for portable radio applications

Proceedings of International Electron Devices Meeting, 1995, p.185-188

1995

Link zum Volltext
Volltext

1.4 kV, 25 A, PT and NPT trench IGBTs with optimum forward characteristics

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312), 1999, p.141-144

1999

Link zum Volltext
Volltext

1.4 kV 4H-SiC PiN diode with a robust non-uniform floating guard ring termination

Journal of semiconductors, 2014-05, Vol.35 (5), p.32-35

陈思哲盛况王珏

2014

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 30.728

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(14.715)
Mit Volltextzugriff
(27.879)

Publikationsform

7 weitere anzeigen...

Weniger anzeigen...

Sprache

10 weitere anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Science & Technology
(20.387)
Technology
(17.267)
Electric Breakdown
(15.804)
Engineering
(14.961)
Engineering, Electrical & Electronic
(14.224)
Physical Sciences
(10.636)
Physics
(10.428)
Physics, Applied
(6.753)
Breakdown Voltage
(6.641)
Breakdown
(6.458)
Voltage
(4.783)
Dielectric Breakdown
(4.323)
Electrodes
(4.279)
Exact Sciences And Technology
(4.183)
Electric Potential
(3.796)
Electric Fields
(3.377)
Materials Science
(3.167)
Applied Sciences
(2.735)
Materials Science, Multidisciplinary
(2.527)
Insulation
(2.399)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

IEEE Xplore
(21.887)
Ingenta
(12.756)
Elektronische Zeitschriftenbibliothek - Freely accessible e-journals
(2.384)
Elsevier ScienceDirect Journals Complete
(1.679)
IngentaConnect Journals
(1.260)
SpringerLink
(1.154)
Wiley Online Library Journals Frontfile Complete
(1.050)
Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
(945)
SpringerLINK Contemporary (Konsortium Baden-Württemberg)
(943)
AIP Journals Complete
(670)
Single Journals
(610)
Wiley Online Library
(596)
Journals@Ovid Complete
(505)
Nexis
(372)
Taylor & Francis Current Content Access
(154)
Taylor & Francis Online
(153)
ACM Digital Library Complete
(149)
American Physical Society Journals
(139)
Factiva
(136)
Ebook Central Perpetual and DDA
(128)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(18)
... seit 90 Tagen
(111)

Menü

Weitere Dienste

Einstellungen

A 0.10 /spl mu/m gate length CMOS technology with 30 /spl Aring/ gate dielectric for 1.0 V-1.5 V applications

A 0.13- \mu \text CMOS Dynamically Reconfigurable Charge Pump for Electrostatic MEMS Actuation

0.13μm CMOS/DMOS platform technology with novel 8V/9V LDMOS for low voltage high-frequency DC-DC converters

A 0.18 pJ/Conversion Step Hybrid Structure based ADC

0.2/spl mu/m gatelength, non-alloyed AlInAs/GaInAs JHEMTs with extrinsic ft=62 GHz

0.25 μm emitter InP/InAlGaAs/GaAsSb double heterojunction bipolar transistor with passivation ledge exhibiting a current gain of over 100

0.29-/spl mu/m/sup 2/ trench cell technologies for 1G-bit DRAMs with open/folded-bit-line layout and selective growth technique

A 0.3 THz Multi-Beam Extended Interaction Klystron Based on TM10,1,0 Mode Coaxial Coupled Cavity

0.35 /spl mu/m, 43 /spl mu//spl Omega/cm/sup 2/, 6 m/spl Omega/ power MOSFET to power future microprocessor

A 0.35 μm 700 V BCD technology with self-isolated and non-isolated ultra-low specific on-resistance DB-nLDMOS

A 0.6-to-1.2 V Scaling Friendly Discrete-Time OTA-Free ΔΣ-ADC for IoT Applications

1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy

1.2 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability

1.2 kV) AlGaN/GaN Monolithic Bidirectional HEMTs With Low On-Resistance (2.54 mΩ ⋅ cm2

1.2 kV GaN/SiC-based Hybrid High Electron Mobility Transistor with Non-destructive Breakdown

1.2 kV Pin Diodes with SiCrystal Epiwafer

1.2-kV SiC Trench-Etched Double-Diffused MOS (TED-MOS)

1.2 kV SiC Trench-Gate MOSFETs with Dual Shielding Regions

1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance

1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability

1.2-MeV Atomic Resolution Holography Electron Microscope

1.2 MeV 原子分解能・ホログラフィー電子顕微鏡の開発

1.2 V operation 1.1 W heterojunction FET for portable radio applications

1.4 kV, 25 A, PT and NPT trench IGBTs with optimum forward characteristics

1.4 kV 4H-SiC PiN diode with a robust non-uniform floating guard ring termination

Suchergebnisse filtern