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Miniaturized Ultrawide Bandwidth WiFi 6E Diplexer Implementation Using XBAW RF Filter Technology
2022 IEEE/MTT-S International Microwave Symposium - IMS 2022, 2022, p.880-882
2022
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Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs
IEEE transactions on microwave theory and techniques, 2006-05, Vol.54 (5), p.2061-2067
2006
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Wideband 6 GHz RF Filters for Wi-Fi 6E Using a Unique BAW Process and Highly Sc-doped AlN Thin Film
2021 IEEE MTT-S International Microwave Symposium (IMS), 2021, p.207-209
2021
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Performance and RF Reliability of GaN-on-SiC HEMT's using Dual-Gate Architectures
2006 IEEE MTT-S International Microwave Symposium Digest, 2006, p.714-717
2006
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Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs)
IEEE microwave and wireless components letters, 2001-06, Vol.11 (6), p.244-245
2001
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452 MHz Bandwidth, High Rejection 5.6 GHz UNII XBAW Coexistence Filters Using Doped AlN-on-Silicon
2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.17.6.1-17.6.4
2019
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Optimization of Gallium nitride high power technology for commercial and military applications
2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2009, p.146-153
2009
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High Power, High Efficiency, AlGaN/GaN HEMT Technology for Wireless Base Station Applications
IEEE MTT-S International Microwave Symposium Digest, 2005, 2005, p.487-490
2005
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0.2 [micro sign]m gate length, non-alloyed P+-AlInAs/N-AlInAs/GaInAs JHEMTs with ft = 62 GHz
Electronics letters, 1996, Vol.32 (23), p.2180
1996
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Voltage Dependent Characteristics of 48V AlGaN/GaN High Electron Mobility Transistor Technology on Silicon Carbide
2007 IEEE/MTT-S International Microwave Symposium, 2007, p.303-306
2007
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RF Breakdown and Large-Signal Modeling of AlGaN/GaN HFET's
2006 IEEE MTT-S International Microwave Symposium Digest, 2006, p.643-646
2006
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GaN Wide Band Power Integrated Circuits
2006 IEEE Compound Semiconductor Integrated Circuit Symposium, 2006, p.85-88
2006
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Linearity and Efficiency Performance of GaN HEMTs with Digital Pre-Distortion Correction
2006 IEEE MTT-S International Microwave Symposium Digest, 2006, p.1327-1330
2006
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High-power AlGaN/GaN FET-based VCO sources
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157), 2001, Vol.3, p.1427-1430 vol.3
2001
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High-performance submicrometer gatelength GaInAs/InP composite channel HEMT's with regrown ohmic contacts
IEEE electron device letters, 1996-11, Vol.17 (11), p.540-542
1996
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High-breakdown-voltage AlInAs/GaInAs junction-modulated HEMT's (JHEMT's) with regrown ohmic contacts by MOCVD
IEEE electron device letters, 1993-12, Vol.14 (12), p.545-547
1993
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A 2 watt Ku-band linear (multi-carrier) transmit module for VSAT applications
1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282), 1999, Vol.3, p.1055-1058 vol.3
1999
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High threshold uniformity, millimeter-wave p/sup +/-GaInAs/n-AlInAs/GaInAs JHEMTs
IEEE electron device letters, 1995-12, Vol.16 (12), p.560-562
1995
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High-speed p/sup +/ GaInAs-n InP heterojunction JFET's (HJFET's) grown by MOCVD
IEEE electron device letters, 1993-02, Vol.14 (2), p.60-62
1993
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Ga0.5In0.49P channel MESFET
Electronics letters, 1993, Vol.29 (24), p.2154
1993
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0.9 W/mm, 76% P.A.E. (7 GHz) GaInAs/InP composite channel HEMTs
Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials, 1997, p.20-23
1997
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Junction heterostructures for high performance electronics
Solid-state electronics, 1995, Vol.38 (9), p.1607-1610
1995
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High-speed p+ GaInAs-n InP heterojunction JFET's (HJFET's) grown by MOCVD
IEEE electron device letters, 1993-02, Vol.14 (2), p.60-62
1993
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35 GHz fmax InP JFET grown by non-hydride MOCVD
Electronics letters, 1993, Vol.29 (4), p.372-373
1993
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High frequency, high breakdown AlInAs/GaInAs junction modulated HEMT's (JHEMT's) with regrown ohmic contacts by MOCVD
IEEE transactions on electron devices, 1993-11, Vol.40 (11), p.2115
1993
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