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Electrical properties of a metal-germanium-topological insulator (metal/n-Ge/p-Bi2Te3) heterostructure devices

Journal of materials science. Materials in electronics, 2021-03, Vol.32 (6), p.8106-8121

2021

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On the Threshold Voltage and Performance of ZnO-Based Thin-Film Transistors with a ZrO2 Gate Dielectric

Journal of electronic materials, 2020-05, Vol.49 (5), p.3156-3164

2020

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A Multiple-Trapping-and-Release Transport Based Threshold Voltage Model for Oxide Thin Film Transistors

Journal of electronic materials, 2021-07, Vol.50 (7), p.4050-4057

2021

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Effect of Doping and Annealing on Thermoelectric Properties of Bismuth Telluride Thin Films

Journal of electronic materials, 2020-07, Vol.49 (7), p.4195-4202

2020

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Flexible perylenediimide/GaN organic–inorganic hybrid system with exciting optical and interfacial properties

Scientific reports, 2020-06, Vol.10 (1), p.10480-10480, Article 10480

2020

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Study of ZnO/BST interface for thin-film transistor (TFT) applications

Surfaces and interfaces, 2021-04, Vol.23, p.100996, Article 100996

2021

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Design of Pixel Circuit Using a-IGZO TFTs to Enhance Uniformity of AMOLED Displays by Threshold Voltage Compensation

Arabian journal for science and engineering (2011), 2021, Vol.46 (10), p.9663-9672

2021

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IIP3 Improvement in Subthreshold LNAs Using Modified Derivative Superposition Technique for IoT Applications

2019 32nd International Conference on VLSI Design and 2019 18th International Conference on Embedded Systems (VLSID), 2019, p.130-134

2019

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Design of threshold voltage insensitive pixel driver circuitry using a-IGZO TFT for AMOLED displays

Microelectronics, 2020-07, Vol.101, p.104819, Article 104819

2020

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Investigations on high-κ dielectrics for low threshold voltage and low leakage zinc oxide thin-film transistor, using material selection methodologies

Journal of materials science. Materials in electronics, 2016-06, Vol.27 (6), p.5972-5981

2016

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Study of structural and electrical properties of ZnO thin film for Thin Film Transistor (TFT) applications

Journal of materials science. Materials in electronics, 2017-11, Vol.28 (21), p.16013-16020

2017

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Adaptation of a compact SPICE level 3 model for oxide thin-film transistors

Journal of computational electronics, 2019-09, Vol.18 (3), p.1037-1044

2019

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Aberrant photoelectric effect in the topological insulator/n-GaN heterojunction (BiTe/n-GaN) under unpolarized illumination

Nanoscale, 2024-01, Vol.16 (2), p.64-613

2024

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Perspective of zinc oxide based thin film transistors: a comprehensive review

Microelectronics international, 2018-01, Vol.35 (1), p.52-63

2018

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Adaptation and comparative analysis of HSPICE level‐61 and level‐62 model for a‐IGZO thin film transistors

International journal of numerical modelling, 2024-03, Vol.37 (2), p.n/a

2024

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Effect of Different Metallic Contacts on the Device Performance of a p-n Heterostructure of a Topological Insulator and Silicon (p-Bi2Te3/n-Si)

IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5388-5395

2020

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Performance of Topological Insulator (Sb2Te3)-Based Vertical Stacking Photodetector on n-Si Substrate

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4342-4348

2022

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Dual-quadrant photodetection in topological insulator and silicon-based heterojunction (n-Bi2Te2Se/p-Si)

Applied surface science, 2021-11, Vol.565, p.150497, Article 150497

2021

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Investigations on high-[kappa] dielectrics for low threshold voltage and low leakage zinc oxide thin-film transistor, using material selection methodologies

Journal of materials science. Materials in electronics, 2016-06, Vol.27 (6), p.5972

2016

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Design of a voltage-programmed VTH compensating pixel circuit for AMOLED displays using diode-connected a-IGZO TFT

IET circuits, devices & systems, 2020-09, Vol.14 (6), p.876-880

2020

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Selection of Low Dimensional Material Alternatives to Silicon for Next Generation Tunnel Field Effect Transistors

SILICON, 2021-03, Vol.13 (3), p.707-717

2021

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Effect of thickness on the properties of ZnO thin films prepared by reactive RF sputtering

Journal of materials science. Materials in electronics, 2018-09, Vol.29 (17), p.14501-14507

2018

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Design of a voltage‐programmed V TH compensating pixel circuit for AMOLED displays using diode‐connected a‐IGZO TFT

IET circuits, devices & systems, 2020-09, Vol.14 (6), p.876-880

2020

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Investigation of RF sputtered, n-Bi2Se3 heterojunction on p-Si for enhanced NIR optoelectronic applications

Solar energy materials and solar cells, 2022-12, Vol.248, p.112028, Article 112028

2022

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Visible to near-infrared broadband photodetector employing thin film topological insulator heterojunction (p-TlBiSe2/n-Si) diode

Applied surface science, 2023-03, Vol.612, p.155813, Article 155813

2023

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Electrical properties of a metal-germanium-topological insulator (metal/n-Ge/p-Bi2Te3) heterostructure devices

On the Threshold Voltage and Performance of ZnO-Based Thin-Film Transistors with a ZrO2 Gate Dielectric

A Multiple-Trapping-and-Release Transport Based Threshold Voltage Model for Oxide Thin Film Transistors

Effect of Doping and Annealing on Thermoelectric Properties of Bismuth Telluride Thin Films

Flexible perylenediimide/GaN organic–inorganic hybrid system with exciting optical and interfacial properties

Study of ZnO/BST interface for thin-film transistor (TFT) applications

Design of Pixel Circuit Using a-IGZO TFTs to Enhance Uniformity of AMOLED Displays by Threshold Voltage Compensation

IIP3 Improvement in Subthreshold LNAs Using Modified Derivative Superposition Technique for IoT Applications

Design of threshold voltage insensitive pixel driver circuitry using a-IGZO TFT for AMOLED displays

Investigations on high-κ dielectrics for low threshold voltage and low leakage zinc oxide thin-film transistor, using material selection methodologies

Study of structural and electrical properties of ZnO thin film for Thin Film Transistor (TFT) applications

Adaptation of a compact SPICE level 3 model for oxide thin-film transistors

Aberrant photoelectric effect in the topological insulator/n-GaN heterojunction (BiTe/n-GaN) under unpolarized illumination

Perspective of zinc oxide based thin film transistors: a comprehensive review

Adaptation and comparative analysis of HSPICE level‐61 and level‐62 model for a‐IGZO thin film transistors

Effect of Different Metallic Contacts on the Device Performance of a p-n Heterostructure of a Topological Insulator and Silicon (p-Bi2Te3/n-Si)

Performance of Topological Insulator (Sb2Te3)-Based Vertical Stacking Photodetector on n-Si Substrate

Dual-quadrant photodetection in topological insulator and silicon-based heterojunction (n-Bi2Te2Se/p-Si)

Investigations on high-[kappa] dielectrics for low threshold voltage and low leakage zinc oxide thin-film transistor, using material selection methodologies

Design of a voltage-programmed VTH compensating pixel circuit for AMOLED displays using diode-connected a-IGZO TFT

Selection of Low Dimensional Material Alternatives to Silicon for Next Generation Tunnel Field Effect Transistors

Effect of thickness on the properties of ZnO thin films prepared by reactive RF sputtering

Design of a voltage‐programmed V TH compensating pixel circuit for AMOLED displays using diode‐connected a‐IGZO TFT

Investigation of RF sputtered, n-Bi2Se3 heterojunction on p-Si for enhanced NIR optoelectronic applications

Visible to near-infrared broadband photodetector employing thin film topological insulator heterojunction (p-TlBiSe2/n-Si) diode

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