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GaSbBi/GaSb quantum well laser diodes

Applied physics letters, 2017-05, Vol.110 (22)

2017

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Growth of InAs(Bi)/GaAs Quantum Dots under a Bismuth Surfactant at High and Low Temperature

Journal of nanomaterials, 2022, Vol.2022, p.1-9

2022

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Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi–Cu–Se, Bi–Ag–Se, and Sb–Cu–Te alloys

Journal of alloys and compounds, 2020-05, Vol.824, p.153880, Article 153880

2020

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Density control of GaN nanowires at the wafer scale using self-assembled SiN x patches on sputtered TiN(111)

Nanotechnology, 2023-09, Vol.34 (37), p.375602

2023

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Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1−xBix GaAs quantum wells

Nanotechnology, 2016-07, Vol.27 (32)

2016

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Physical origin of the incubation time of self-induced GaN nanowires

Applied physics letters, 2011-07, Vol.99 (3), p.033102-033102-3

2011

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Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires

Nanotechnology, 2023-11, Vol.34 (46), p.465605

2023

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Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions

Journal of physics. D, Applied physics, 2019-09, Vol.52 (38), p.385101

2019

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Electronic Structural and Optical Properties of Multilayer Blue Phosphorus: A First-Principle Study

Journal of nanomaterials, 2019-01, Vol.2019, p.1-8

2019

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In situ transmission electron microscopy of solid phase epitaxy of Ge on Fe3Si

Semiconductor science and technology, 2019-11, Vol.34 (12)

2019

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Macro- and micro-strain in GaN nanowires on Si(111)

Nanotechnology, 2011-07, Vol.22 (29), p.295714-295714

2011

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Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers

Journal of applied physics, 2019-08, Vol.126 (8)

2019

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Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al, Ga)As quantum wells

Applied physics letters, 2017-05, Vol.110 (20)

2017

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Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

Nanotechnology, 2010-07, Vol.21 (30), p.305201-305201

2010

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Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1−xBix epilayers

Journal of applied physics, 2015-05, Vol.117 (18)

2015

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Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy

Nanotechnology, 2024-06, Vol.35 (26)

2024

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Growth of Fe3Si/Ge/Fe3Si trilayers on GaAs(001) using solid-phase epitaxy

Applied physics letters, 2017-03, Vol.110 (10)

2017

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Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission

Nanotechnology, 2013-05, Vol.24 (17), p.175303-175303

2013

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Effect of Photoillumination on Gold-Nanoparticle-Assisted Chemical Etching of Silicon

Journal of nanomaterials, 2018-01, Vol.2018, p.1-5

2018

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Clustering in a precipitate-free GeMn magnetic semiconductor

Physical review letters, 2006-12, Vol.97 (23), p.237202-237202, Article 237202

2006

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In situ investigation of self-induced GaN nanowire nucleation on Si

Applied physics letters, 2010-07, Vol.97 (4), p.043101-043101-3

2010

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Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

Nature (London), 2000-08, Vol.406 (6798), p.865-868

2000

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Lattice matched Volmer-Weber growth of Fe3Si on GaAs(001)-the influence of the growth rate

Semiconductor science and technology, 2019-10, Vol.34 (12)

2019

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Effects of nanowire coalescence on their structural and optical properties on a local scale

Applied physics letters, 2009-12, Vol.95 (24), p.241910-241910-3

2009

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Molecular-beam epitaxy of GaInSbBi alloys

Journal of applied physics, 2019-10, Vol.126 (15)

2019

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GaSbBi/GaSb quantum well laser diodes

Growth of InAs(Bi)/GaAs Quantum Dots under a Bismuth Surfactant at High and Low Temperature

Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi–Cu–Se, Bi–Ag–Se, and Sb–Cu–Te alloys

Density control of GaN nanowires at the wafer scale using self-assembled SiN x patches on sputtered TiN(111)

Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1−xBix GaAs quantum wells

Physical origin of the incubation time of self-induced GaN nanowires

Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires

Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions

Electronic Structural and Optical Properties of Multilayer Blue Phosphorus: A First-Principle Study

In situ transmission electron microscopy of solid phase epitaxy of Ge on Fe3Si

Macro- and micro-strain in GaN nanowires on Si(111)

Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers

Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al, Ga)As quantum wells

Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1−xBix epilayers

Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy

Growth of Fe3Si/Ge/Fe3Si trilayers on GaAs(001) using solid-phase epitaxy

Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission

Effect of Photoillumination on Gold-Nanoparticle-Assisted Chemical Etching of Silicon

Clustering in a precipitate-free GeMn magnetic semiconductor

In situ investigation of self-induced GaN nanowire nucleation on Si

Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

Lattice matched Volmer-Weber growth of Fe3Si on GaAs(001)-the influence of the growth rate

Effects of nanowire coalescence on their structural and optical properties on a local scale

Molecular-beam epitaxy of GaInSbBi alloys

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