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Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys

Journal of crystal growth, 2017-11, Vol.477, p.144-148

2017

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Carrier dynamics in (Ga,In)(Sb,Bi)/GaSb quantum wells for laser applications in the mid-infrared spectral range

Scientific reports, 2022-07, Vol.12 (1), p.12961-12961, Article 12961

2022

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Interface energy analysis of III–V islands on Si (001) in the Volmer-Weber growth mode

Applied physics letters, 2018-11, Vol.113 (19)

2018

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Localized surface plasmon resonance frequency tuning in highly doped InAsSb/GaSb one-dimensional nanostructures

Nanotechnology, 2016-10, Vol.27 (42), p.425201

2016

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GaSbBi/GaSb quantum well laser diodes

Applied physics letters, 2017-05, Vol.110 (22)

2017

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Thermal performance of GaInSb quantum well lasers for silicon photonics applications

Applied physics letters, 2021-03, Vol.118 (10)

2021

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Quantum cascade lasers monolithically integrated on germanium

Optics express, 2022-12, Vol.30 (25), p.45259-45266

2022

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Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm

Optics express, 2013-03, Vol.21 (5), p.6101-6108

2013

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Molecular-beam epitaxy of GaInSbBi alloys

Journal of applied physics, 2019-10, Vol.126 (15)

2019

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Growth and characterization of AlInAsSb layers lattice-matched to GaSb

Journal of crystal growth, 2017-11, Vol.477, p.72-76

2017

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In situ determination of the growth conditions of GaSbBi alloys

Journal of crystal growth, 2018-08, Vol.495, p.9-13

2018

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Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment

Journal of applied physics, 2019-05, Vol.125 (20)

2019

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X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates

Journal of crystal growth, 2016-04, Vol.439, p.33-39

2016

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Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells

Solar energy materials and solar cells, 2021-01, Vol.219, p.110795, Article 110795

2021

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Improved efficiency of GaSb solar cells using an Al0.50Ga0.50As0.04Sb0.96 window layer

Solar energy materials and solar cells, 2019-09, Vol.200, p.110042, Article 110042

2019

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Transmission electron microscopy of Ga(Sb, Bi)/GaSb quantum wells with varying Bi content and quantum well thickness

Semiconductor science and technology, 2018-09, Vol.33 (9), p.94006

2018

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Optical properties and dynamics of excitons in Ga(Sb, Bi)/GaSb quantum wells: evidence for a regular alloy behavior

Semiconductor science and technology, 2020-02, Vol.35 (2), p.25024

2020

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Molecular-beam epitaxy of GaSb on 6°-offcut (0 0 1) Si using a GaAs nucleation layer

Journal of crystal growth, 2020-01, Vol.529, p.125299, Article 125299

2020

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Characterization of antimonide based material grown by molecular epitaxy on vicinal silicon substrates via a low temperature AlSb nucleation layer

Journal of crystal growth, 2017-11, Vol.477, p.65-71

2017

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GaSb-based solar cells for multi-junction integration on Si substrates

Solar energy materials and solar cells, 2019-03, Vol.191, p.444-450

2019

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Interband cascade Lasers with AlGaAsSb cladding layers emitting at 33 µm

Optics express, 2019-10, Vol.27 (22), p.31425-31434

2019

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3.3 µm interband-cascade resonant-cavity light-emitting diode with narrow spectral emission linewidth

Semiconductor science and technology, 2020-12, Vol.35 (12), p.125029

2020

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Erratum: “Thermal performance of GaInSb quantum well lasers for silicon photonics applications” [Appl. Phys. Lett. 118, 101105 (2021)]

Applied physics letters, 2021-05, Vol.118 (18)

2021

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Midwave infrared barrier detector based on Ga-free InAs/InAsSb type-II superlattice grown by molecular beam epitaxy on Si substrate

Infrared physics & technology, 2019-01, Vol.96, p.39-43

2019

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InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

Journal of crystal growth, 2019-03, Vol.510, p.18-22

2019

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Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys

Carrier dynamics in (Ga,In)(Sb,Bi)/GaSb quantum wells for laser applications in the mid-infrared spectral range

Interface energy analysis of III–V islands on Si (001) in the Volmer-Weber growth mode

Localized surface plasmon resonance frequency tuning in highly doped InAsSb/GaSb one-dimensional nanostructures

GaSbBi/GaSb quantum well laser diodes

Thermal performance of GaInSb quantum well lasers for silicon photonics applications

Quantum cascade lasers monolithically integrated on germanium

Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm

Molecular-beam epitaxy of GaInSbBi alloys

Growth and characterization of AlInAsSb layers lattice-matched to GaSb

In situ determination of the growth conditions of GaSbBi alloys

Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment

X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates

Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells

Improved efficiency of GaSb solar cells using an Al0.50Ga0.50As0.04Sb0.96 window layer

Transmission electron microscopy of Ga(Sb, Bi)/GaSb quantum wells with varying Bi content and quantum well thickness

Optical properties and dynamics of excitons in Ga(Sb, Bi)/GaSb quantum wells: evidence for a regular alloy behavior

Molecular-beam epitaxy of GaSb on 6°-offcut (0 0 1) Si using a GaAs nucleation layer

Characterization of antimonide based material grown by molecular epitaxy on vicinal silicon substrates via a low temperature AlSb nucleation layer

GaSb-based solar cells for multi-junction integration on Si substrates

Interband cascade Lasers with AlGaAsSb cladding layers emitting at 33 µm

3.3 µm interband-cascade resonant-cavity light-emitting diode with narrow spectral emission linewidth

Erratum: “Thermal performance of GaInSb quantum well lasers for silicon photonics applications” [Appl. Phys. Lett. 118, 101105 (2021)]

Midwave infrared barrier detector based on Ga-free InAs/InAsSb type-II superlattice grown by molecular beam epitaxy on Si substrate

InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

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