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InAsSb Diode Optical Pairs for Real-Time Carbon Dioxide Sensors

Technical physics, 2018-09, Vol.63 (9), p.1390-1395

2018

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Low frequency noise in reverse biased double heterostructure P-InAsSbP/n-InAs infrared photodiodes

Semiconductor science and technology, 2020-07, Vol.35 (7), p.75010

2020

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Low frequency noise in reverse biased P-InAsSbP/n-InAs infrared photodiodes

Semiconductor science and technology, 2019-01, Vol.34 (1), p.15013

2019

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Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later)

Semiconductors (Woodbury, N.Y.), 2019-02, Vol.53 (2), p.139-149

2019

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Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes

Semiconductor science and technology, 2018-06, Vol.33 (6), p.65016

2018

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Room temperature low frequency noise in n+-InAs/n-InAsSbP/InAs/p-InAsSbP double heterostructure infrared photodiodes

Semiconductor science and technology, 2019-10, Vol.34 (10), p.105015

2019

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On-Chip ATR Sensor (λ = 3.4 μm) Based on InAsSbP/InAs Double Heterostructure for the Determination of Ethanol Concentration in Aqueous Solutions

Optics and spectroscopy, 2023, Vol.131 (1), p.31-37

2023

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On Heating Mechanisms in LEDs Based on p-InAsSbP/n-InAs(Sb)

Semiconductors (Woodbury, N.Y.), 2023-12, Vol.57 (13), p.621-631

2023

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On the Use of Indium Arsenide as the Waveguide Material in the Measurements by Attenuated Total Reflectance

Optics and spectroscopy, 2021, Vol.129 (11), p.1231-1235

2021

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Long-wave infrared InAs0.6Sb0.4 photodiodes grown onto n-InAs substrates

Journal of physics. Conference series, 2021-03, Vol.1851 (1), p.12019

2021

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Substrate-removed flip-chip photodiode array based on InAsSbP/InAs double heterostructure

Journal of physics. Conference series, 2019-12, Vol.1410 (1), p.12028

2019

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InAsSbP Photodiodes for 2.6–2.8-μm Wavelengths

Technical physics, 2018-02, Vol.63 (2), p.226-229

2018

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Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes

Infrared physics & technology, 2014-05, Vol.64, p.62-65

2014

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InAs and InAsSb LEDs with built-in cavities

Semiconductor science and technology, 2003-04, Vol.18 (4), p.269-272

2003

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Low frequency noise in p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSbP mid-IR light emitting diodes

Infrared physics & technology, 2022-09, Vol.125, p.104301, Article 104301

2022

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Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode-photodiode pairs

Infrared physics & technology, 2021-09, Vol.117, p.103867, Article 103867

2021

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Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: Photovoltaic mode and forward bias

Infrared physics & technology, 2020-12, Vol.111, p.103460, Article 103460

2020

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Room temperature mid-IR two-color photodiodes with InAs and InAs0.9Sb0.1 absorbing layers

Journal of physics. Conference series, 2020-12, Vol.1697 (1)

2020

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Room temperature mid-IR two-color photodiodes with InAs and InAs 0.9 Sb 0.1 absorbing layers

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12180

2020

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P-InAsSbP/p-InAs0.88Sb0.12/n-InAs0.88Sb0.12/n+-InAs PDs with a smooth p-n junction

Infrared physics & technology, 2018-01, Vol.88, p.223-227

2018

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Current crowding in InAsSb light-emitting diodes

Applied physics letters, 2001-12, Vol.79 (25), p.4228-4230

2001

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P-InAsSbP/n-InAs single heterostructure back-side illuminated 8×8 photodiode array

Infrared physics & technology, 2016-09, Vol.78, p.249-253

2016

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Optically pumped midinfrared (λ = 3.6 μm) light-emitting diodes based on indium arsenide with photonic crystals

Technical physics letters, 2008-05, Vol.34 (5), p.405-407

2008

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Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes

Infrared physics & technology, 2016-05, Vol.76, p.542-545

2016

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6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm

Applied physics letters, 2002-08, Vol.81 (7), p.1166-1167

2002

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InAsSb Diode Optical Pairs for Real-Time Carbon Dioxide Sensors

Low frequency noise in reverse biased double heterostructure P-InAsSbP/n-InAs infrared photodiodes

Low frequency noise in reverse biased P-InAsSbP/n-InAs infrared photodiodes

Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later)

Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes

Room temperature low frequency noise in n+-InAs/n-InAsSbP/InAs/p-InAsSbP double heterostructure infrared photodiodes

On-Chip ATR Sensor (λ = 3.4 μm) Based on InAsSbP/InAs Double Heterostructure for the Determination of Ethanol Concentration in Aqueous Solutions

On Heating Mechanisms in LEDs Based on p-InAsSbP/n-InAs(Sb)

On the Use of Indium Arsenide as the Waveguide Material in the Measurements by Attenuated Total Reflectance

Long-wave infrared InAs0.6Sb0.4 photodiodes grown onto n-InAs substrates

Substrate-removed flip-chip photodiode array based on InAsSbP/InAs double heterostructure

InAsSbP Photodiodes for 2.6–2.8-μm Wavelengths

Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes

InAs and InAsSb LEDs with built-in cavities

Low frequency noise in p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSbP mid-IR light emitting diodes

Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode-photodiode pairs

Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: Photovoltaic mode and forward bias

Room temperature mid-IR two-color photodiodes with InAs and InAs0.9Sb0.1 absorbing layers

Room temperature mid-IR two-color photodiodes with InAs and InAs 0.9 Sb 0.1 absorbing layers

P-InAsSbP/p-InAs0.88Sb0.12/n-InAs0.88Sb0.12/n+-InAs PDs with a smooth p-n junction

Current crowding in InAsSb light-emitting diodes

P-InAsSbP/n-InAs single heterostructure back-side illuminated 8×8 photodiode array

Optically pumped midinfrared (λ = 3.6 μm) light-emitting diodes based on indium arsenide with photonic crystals

Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes

6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm

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