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Low frequency noise in p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSbP mid-IR light emitting diodes

Infrared physics & technology, 2022-09, Vol.125, p.104301, Article 104301

2022

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Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode-photodiode pairs

Infrared physics & technology, 2021-09, Vol.117, p.103867, Article 103867

2021

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Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: Photovoltaic mode and forward bias

Infrared physics & technology, 2020-12, Vol.111, p.103460, Article 103460

2020

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Morphology and redispersibility of silver nanoparticles prepared by chemical reduction

Journal of physics. Conference series, 2020-12, Vol.1695 (1), p.12187

2020

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P-InAsSbP/p-InAs0.88Sb0.12/n-InAs0.88Sb0.12/n+-InAs PDs with a smooth p-n junction

Infrared physics & technology, 2018-01, Vol.88, p.223-227

2018

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InAsSbP Photodiodes for 2.6-2.8-[micro]m Wavelengths

Technical physics, 2018-02, Vol.63 (2), p.226

2018

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Photoacoustic gas detection using a cantilever microphone and III–V mid-IR LEDs

Vibrational spectroscopy, 2009-11, Vol.51 (2), p.289-293

2009

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Corrigendum to “InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes ([formula omitted]0.1 = 5.2 μm, 300 K) operating in the 77–353 K temperature range” [Infrared Phys. Technol. 73 (2015) 232–237]

Infrared physics & technology, 2016-05, Vol.76, p.777-777

2016

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P-InAsSbP/n-InAs single heterostructure back-side illuminated 8×8 photodiode array

Infrared physics & technology, 2016-09, Vol.78, p.249-253

2016

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Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures

Semiconductors (Woodbury, N.Y.), 2017-02, Vol.51 (2), p.260-266

2017

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InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes (λ0.1=5.2μm, 300K) operating in the 77–353К temperature range

Infrared physics & technology, 2015-11, Vol.73, p.232-237

2015

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InAsSbP/InAs 0.9 Sb 0.1 /InAs DH photodiodes ( λ 0.1 = 5.2 μm, 300 K) operating in the 77–353 К temperature range

Infrared physics & technology, 2015-11, Vol.73, p.232-237

2015

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Photodiode 1 x 64 linear array based on a double p-InAsSbP/n-In[As.sub.0.92][Sb.sub.0.08]/[n.sup.+]-InAs heterostructure

Semiconductors (Woodbury, N.Y.), 2016-05, p.646

2016

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Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes

Infrared physics & technology, 2016-05, Vol.76, p.542-545

2016

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P-InAsSbP/[n.sup.0]-InAs/[n.sup.+]-InAs photodiodes for operation at moderate cooling

Semiconductors (Woodbury, N.Y.), 2014-10, Vol.48 (10), p.1359

2014

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Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes

Infrared physics & technology, 2014-05, Vol.64, p.62-65

2014

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Current-voltage characteristics and photocurrent collection in radially symmetric front-surface-illuminated InAsSb(P) photodiodes

Technical physics, 2014-11, Vol.59 (11), p.1631-1635

2014

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Photonic crystals and Bragg gratings for the mid-IR and terahertz spectral ranges

Semiconductors (Woodbury, N.Y.), 2013-12, Vol.47 (12), p.1570-1573

2013

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Nonuniformity in the spatial distribution of negative luminescence in InAsSb

Semiconductors (Woodbury, N.Y.), 2012-02, Vol.46 (2), p.247

2012

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Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes

Semiconductors (Woodbury, N.Y.), 2011-04, Vol.45 (4), p.543-549

2011

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Low Voltage CO 2-Gas Sensor Based on III-V Mid-IR Immersion Lens Diode Optopairs: Where we Are and How Far we Can Go?

IEEE sensors journal, 2010-02, Vol.10 (2), p.225-234

2010

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Front surface illuminated InAsSb photodiodes (long-wavelength cutoff λ0.1 = 4.5 μm) operating at temperatures of 25–80°C

Semiconductors (Woodbury, N.Y.), 2012-05, Vol.46 (5), p.690-695

2012

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Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3–4.3 μm spectral range

Sensors and actuators. B, Chemical, 2003-06, Vol.91 (1), p.256-261

2003

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Si–Te acousto-optic modulator for the 1.7–10.6 μm IR region

Journal of non-crystalline solids, 2000-05, Vol.266, p.969-972

2000

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InGaAsSb negative luminescent devices with built-in cavities emitting at [formula omitted]

Physica. E, Low-dimensional systems & nanostructures, 2004, Vol.20 (3), p.548-552

2004

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Low frequency noise in p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSbP mid-IR light emitting diodes

Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode-photodiode pairs

Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: Photovoltaic mode and forward bias

Morphology and redispersibility of silver nanoparticles prepared by chemical reduction

P-InAsSbP/p-InAs0.88Sb0.12/n-InAs0.88Sb0.12/n+-InAs PDs with a smooth p-n junction

InAsSbP Photodiodes for 2.6-2.8-[micro]m Wavelengths

Photoacoustic gas detection using a cantilever microphone and III–V mid-IR LEDs

Corrigendum to “InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes ([formula omitted]0.1 = 5.2 μm, 300 K) operating in the 77–353 K temperature range” [Infrared Phys. Technol. 73 (2015) 232–237]

P-InAsSbP/n-InAs single heterostructure back-side illuminated 8×8 photodiode array

Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures

InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes (λ0.1=5.2μm, 300K) operating in the 77–353К temperature range

InAsSbP/InAs 0.9 Sb 0.1 /InAs DH photodiodes ( λ 0.1 = 5.2 μm, 300 K) operating in the 77–353 К temperature range

Photodiode 1 x 64 linear array based on a double p-InAsSbP/n-In[As.sub.0.92][Sb.sub.0.08]/[n.sup.+]-InAs heterostructure

Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes

P-InAsSbP/[n.sup.0]-InAs/[n.sup.+]-InAs photodiodes for operation at moderate cooling

Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes

Current-voltage characteristics and photocurrent collection in radially symmetric front-surface-illuminated InAsSb(P) photodiodes

Photonic crystals and Bragg gratings for the mid-IR and terahertz spectral ranges

Nonuniformity in the spatial distribution of negative luminescence in InAsSb

Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes

Low Voltage CO 2-Gas Sensor Based on III-V Mid-IR Immersion Lens Diode Optopairs: Where we Are and How Far we Can Go?

Front surface illuminated InAsSb photodiodes (long-wavelength cutoff λ0.1 = 4.5 μm) operating at temperatures of 25–80°C

Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3–4.3 μm spectral range

Si–Te acousto-optic modulator for the 1.7–10.6 μm IR region

InGaAsSb negative luminescent devices with built-in cavities emitting at [formula omitted]

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