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In vitro inhibitory effect of zingerone on TNFα-stimulated fibroblast-like synoviocytes

In vitro cellular & developmental biology. Animal, 2023-09, Vol.59 (8), p.615-623

2023

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Experimental study on the oxide trap coupling effect in metal oxide semiconductor field effect transistors with HfO2 gate dielectrics

Applied physics letters, 2014-06, Vol.104 (26)

2014

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Systematical study of 14nm FinFET reliability: From device level stress to product HTOL

2015 IEEE International Reliability Physics Symposium, 2015, p.2F.3.1-2F.3.5

2015

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Negative-Bias Temperature Instability in Gate-All-Around Silicon Nanowire MOSFETs: Characteristic Modeling and the Impact on Circuit Aging

IEEE transactions on electron devices, 2010-12, Vol.57 (12), p.3442-3450

2010

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HCI and NBTI induced degradation in gate-all-around silicon nanowire transistors

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1515-1520

2011

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Optimization and Benchmarking FinFETs and GAA Nanosheet Architectures at 3-nm Technology Node: Impact of Unique Boosters

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4088-4094, Article 4088

2022

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Observation of strong reflection of electron waves exiting a ballistic channel at low energy

AIP advances, 2016-06, Vol.6 (6), p.065212-065212-9

2016

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Deep understanding of AC RTN in MuGFETs through new characterization method and impacts on logic circuits

2013 Symposium on VLSI Technology, 2013, p.T186-T187

2013

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Peimine suppresses collagen-induced arthritis, activated fibroblast-like synoviocytes and TNFα-induced MAPK pathways

International immunopharmacology, 2022-10, Vol.111, p.109181-109181, Article 109181

2022

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Defects in Strontium Titanate: A First Principles Study

2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2023, p.145-148

2023

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Characterization and analysis of gate-all-around Si nanowire transistors for extreme scaling

2011 IEEE Custom Integrated Circuits Conference (CICC), 2011, p.1-8

2011

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Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal--Oxide--Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition

Jpn J Appl Phys, 2010-04, Vol.49 (4), p.04DC08-04DC08-4

2010

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New observations on the AC random telegraph noise (AC RTN) in nano-MOSFETs

Proceedings of Technical Program of 2012 VLSI Technology, System and Application, 2012, p.1-2

2012

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Multi-Scale Modeling of Transistors Based on the 2D Semiconductor Bi2O2Se

2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2023, p.49-52

2023

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Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits

Microelectronics and reliability, 2018-02, Vol.81, p.101-111

2018

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New insights into the hot carrier degradation (HCD) in FinFET: New observations, unified compact model, and impacts on circuit reliability

2017 IEEE International Electron Devices Meeting (IEDM), 2017, p.7.2.1-7.2.4

2017

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Performance Trade-Off Scenarios for GAA Nanosheet FETs Considering Inner-spacers and Epi-induced Stress: Understanding & Mitigating Process Risks

ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC), 2021, p.55-58

2021

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Performance Trade-Off Scenarios for GAA Nanosheet FETs Considering Inner-spacers and Epi-induced Stress: Understanding & Mitigating Process Risks

ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), 2021, p.55-58

2021

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New insights into oxide traps characterization in gate-all-around nanowire transistors with TiN metal gates based on combined Ig-Id RTS technique

2009 Symposium on VLSI Technology, 2009, p.46-47

2009

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New observations on hot carrier induced dynamic variation in nano-scaled SiON/poly, HK/MG and FinFET devices based on on-the-fly HCI technique: The role of single trap induced degradation

2014 IEEE International Electron Devices Meeting, 2014, p.34.6.1-34.6.4

2014

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On the origin of frequency dependence of single-trap induced degradation in AC NBTI

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2015, p.107-110

2015

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Understanding NBTI-induced dynamic variability in the nano-reliability Era: From devices to circuits

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2015, p.119-121

2015

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Top-down fabrication of vertical silicon nano-rings based on Poisson diffraction

Nanotechnology, 2011-07, Vol.22 (30), p.305301-1-6

2011

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Reliability characterization of 10nm FinFET technology with multi-VT gate stack for low power and high performance

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.15.1.1-15.1.4

2016

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Gate oxide TDDB reliability under various stress in sub-16nm FinFET technology

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2022, p.1-4

2022

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In vitro inhibitory effect of zingerone on TNFα-stimulated fibroblast-like synoviocytes

Experimental study on the oxide trap coupling effect in metal oxide semiconductor field effect transistors with HfO2 gate dielectrics

Systematical study of 14nm FinFET reliability: From device level stress to product HTOL

Negative-Bias Temperature Instability in Gate-All-Around Silicon Nanowire MOSFETs: Characteristic Modeling and the Impact on Circuit Aging

HCI and NBTI induced degradation in gate-all-around silicon nanowire transistors

Optimization and Benchmarking FinFETs and GAA Nanosheet Architectures at 3-nm Technology Node: Impact of Unique Boosters

Observation of strong reflection of electron waves exiting a ballistic channel at low energy

Deep understanding of AC RTN in MuGFETs through new characterization method and impacts on logic circuits

Peimine suppresses collagen-induced arthritis, activated fibroblast-like synoviocytes and TNFα-induced MAPK pathways

Defects in Strontium Titanate: A First Principles Study

Characterization and analysis of gate-all-around Si nanowire transistors for extreme scaling

Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal--Oxide--Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition

New observations on the AC random telegraph noise (AC RTN) in nano-MOSFETs

Multi-Scale Modeling of Transistors Based on the 2D Semiconductor Bi2O2Se

Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits

New insights into the hot carrier degradation (HCD) in FinFET: New observations, unified compact model, and impacts on circuit reliability

Performance Trade-Off Scenarios for GAA Nanosheet FETs Considering Inner-spacers and Epi-induced Stress: Understanding & Mitigating Process Risks

Performance Trade-Off Scenarios for GAA Nanosheet FETs Considering Inner-spacers and Epi-induced Stress: Understanding & Mitigating Process Risks

New insights into oxide traps characterization in gate-all-around nanowire transistors with TiN metal gates based on combined Ig-Id RTS technique

New observations on hot carrier induced dynamic variation in nano-scaled SiON/poly, HK/MG and FinFET devices based on on-the-fly HCI technique: The role of single trap induced degradation

On the origin of frequency dependence of single-trap induced degradation in AC NBTI

Understanding NBTI-induced dynamic variability in the nano-reliability Era: From devices to circuits

Top-down fabrication of vertical silicon nano-rings based on Poisson diffraction

Reliability characterization of 10nm FinFET technology with multi-VT gate stack for low power and high performance

Gate oxide TDDB reliability under various stress in sub-16nm FinFET technology

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