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Defect states characterization of non-annealed and annealed ZrO2/InAlN/GaN structures by capacitance measurements

Applied physics letters, 2013-02, Vol.102 (6)

2013

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Influence of growth temperature on the structure and electrical properties of high-permittivity TiO2 films in TiCl4-H2O and TiCl4-O3 atomic-layer-deposition processes

Physica status solidi. A, Applications and materials science, 2014-02, Vol.211 (2), p.425-432

2014

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Conductance anisotropy of MOCVD-grown α-Ga2O3 films caused by (010) β-Ga2O3 filament-shaped inclusions

Journal of physics. D, Applied physics, 2023-01, Vol.56 (4)

2023

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Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

Applied surface science, 2017-12, Vol.426, p.656-661

2017

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Ru and RuO2 gate electrodes for advanced CMOS technology

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-06, Vol.109 (1-3), p.117-121

2004

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Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures

Materials science in semiconductor processing, 2019-03, Vol.91, p.356-361

2019

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Trapped charge effects in AlGaN GaN metal-oxide-semiconductor structures with Al2O3 and ZrO2 gate insulator

Semiconductor science and technology, 2014-04, Vol.29 (4)

2014

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High-permittivity metal-insulator-metal capacitors with TiO2 rutile dielectric and RuO2 bottom electrode

IOP conference series. Materials Science and Engineering, 2010-01, Vol.8 (1), p.012024-012024

2010

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Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks

Applied surface science, 2011-06, Vol.257 (17), p.7876-7880

2011

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Growth of RuO2 thin films by liquid injection atomic layer deposition

Thin solid films, 2010-06, Vol.518 (16), p.4701-4704

2010

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Growth of α- and β-Ga2O3 epitaxial layers on sapphire substrates using liquid-injection MOCVD

Semiconductor science and technology, 2020-11, Vol.35 (11)

2020

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Transport properties of Si-doped \boldsymbol-\mathbf}\mathbf} grown by liquid-injection MOCVD

2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), 2022, p.1-4

2022

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Electrical properties and thermal stability of MOCVD grown Ru gate electrodes for advanced CMOS technology

Microelectronic engineering, 2006-11, Vol.83 (11), p.2412-2416

2006

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Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition

Materials science in semiconductor processing, 2006-12, Vol.9 (6), p.1065-1072

2006

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Gate oxide thickness dependence of the leakage current mechanism in Ru/Ta2O5/SiON/Si structures

Semiconductor science and technology, 2010-07, Vol.25 (7), p.075007-075007

2010

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Structural and electrical properties of \text\mathrm transistors grown on 4H-SiC substrates

2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), 2022, p.1-4

2022

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IEEE_Xplore

Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology

Materials science in semiconductor processing, 2004, Vol.7 (4), p.231-236

2004

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Properties of MgB2 superconductor chemically treated by acetic acid

Physica. C, Superconductivity, 2010-03, Vol.470 (5-6), p.331-335

2010

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Post-deposition processing and oxygen content of TiO2-based capacitors

Microelectronic engineering, 2011-07, Vol.88 (7), p.1525-1528

2011

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Atomic layer deposition grown metal-insulator-metal capacitors with RuO2 electrodes and Al-doped rutile TiO2 dielectric layer

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1), p.1

2011

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Structural properties of Y2O3 thin films grown on Si(100) and Si(111) substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-01, Vol.116 (1), p.30-33

2005

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Growth of gadolinium oxide films for advanced MOS structure

Microelectronic engineering, 2005-06, Vol.80, p.154-157

2005

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Effects influencing the grain connectivity in ex-situ MgB2 wires

Physica. C, Superconductivity, 2010-03, Vol.470 (5-6), p.340-344

2010

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Influence of growth temperature on the structure and electrical properties of high-permittivity TiO sub(2) films in TiCl sub(4)-H sub(2)O and TiCl sub(4)-O sub(3) atomic-layer-deposition processes

Physica status solidi. A, Applications and materials science, 2014-02, Vol.211 (2), p.425-432

2014

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Atomic layer deposition of rutile-phase TiO sub(2) on RuO sub(2) from TiCl sub(4) and O sub(3): Growth of high-permittivity dielectrics with low leakage current

Journal of crystal growth, 2013-11, Vol.382, p.61-66

2013

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Defect states characterization of non-annealed and annealed ZrO2/InAlN/GaN structures by capacitance measurements

Influence of growth temperature on the structure and electrical properties of high-permittivity TiO2 films in TiCl4-H2O and TiCl4-O3 atomic-layer-deposition processes

Conductance anisotropy of MOCVD-grown α-Ga2O3 films caused by (010) β-Ga2O3 filament-shaped inclusions

Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

Ru and RuO2 gate electrodes for advanced CMOS technology

Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures

Trapped charge effects in AlGaN GaN metal-oxide-semiconductor structures with Al2O3 and ZrO2 gate insulator

High-permittivity metal-insulator-metal capacitors with TiO2 rutile dielectric and RuO2 bottom electrode

Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks

Growth of RuO2 thin films by liquid injection atomic layer deposition

Growth of α- and β-Ga2O3 epitaxial layers on sapphire substrates using liquid-injection MOCVD

Transport properties of Si-doped \boldsymbol-\mathbf}\mathbf} grown by liquid-injection MOCVD

Electrical properties and thermal stability of MOCVD grown Ru gate electrodes for advanced CMOS technology

Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition

Gate oxide thickness dependence of the leakage current mechanism in Ru/Ta2O5/SiON/Si structures

Structural and electrical properties of \text\mathrm transistors grown on 4H-SiC substrates

Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology

Properties of MgB2 superconductor chemically treated by acetic acid

Post-deposition processing and oxygen content of TiO2-based capacitors

Atomic layer deposition grown metal-insulator-metal capacitors with RuO2 electrodes and Al-doped rutile TiO2 dielectric layer

Structural properties of Y2O3 thin films grown on Si(100) and Si(111) substrates

Growth of gadolinium oxide films for advanced MOS structure

Effects influencing the grain connectivity in ex-situ MgB2 wires

Influence of growth temperature on the structure and electrical properties of high-permittivity TiO sub(2) films in TiCl sub(4)-H sub(2)O and TiCl sub(4)-O sub(3) atomic-layer-deposition processes

Atomic layer deposition of rutile-phase TiO sub(2) on RuO sub(2) from TiCl sub(4) and O sub(3): Growth of high-permittivity dielectrics with low leakage current

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