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Influence of growth temperature on the structure and electrical properties of high-permittivity TiO2 films in TiCl4-H2O and TiCl4-O3 atomic-layer-deposition processes

Physica status solidi. A, Applications and materials science, 2014-02, Vol.211 (2), p.425-432

2014

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Atomic Layer Deposition of Zirconium Oxide on Carbon Nanoparticles

IOP conference series. Materials Science and Engineering, 2013-01, Vol.49 (1), p.12019-4

2013

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Influence of growth temperature on the structure and electrical properties of high‐permittivity Ti O 2 films in Ti C l 4 ‐ H 2 O and Ti C l 4 ‐ O 3 atomic‐layer‐deposition processes

Physica status solidi. A, Applications and materials science, 2014-02, Vol.211 (2), p.425-432

2014

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Influence of growth temperature on the structure and electrical properties of high-permittivity TiO sub(2) films in TiCl sub(4)-H sub(2)O and TiCl sub(4)-O sub(3) atomic-layer-deposition processes

Physica status solidi. A, Applications and materials science, 2014-02, Vol.211 (2), p.425-432

2014

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Atomic layer deposition of rutile-phase TiO sub(2) on RuO sub(2) from TiCl sub(4) and O sub(3): Growth of high-permittivity dielectrics with low leakage current

Journal of crystal growth, 2013-11, Vol.382, p.61-66

2013

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Tribological properties of PVD coatings with lubricating films

Estonian journal of engineering, 2012-09, Vol.18 (3), p.193

2012

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Optical characterization of HfO2 thin films grown by atomic layer deposition

Thin solid films, 2004-11, Vol.466 (1-2), p.41-47

2004

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Characterization of Ar/N 2 /H 2 middle-pressure RF discharge and application of the afterglow region for nitridation of GaAs

Journal of physics. D, Applied physics, 2017-12, Vol.50 (50), p.505201

2017

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Characterization of Ar/N2/H2 middle-pressure RF discharge and application of the afterglow region for nitridation of GaAs

Journal of physics. D, Applied physics, 2017-11, Vol.50 (50)

2017

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The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal–Insulator–Metal (MIM) Devices for Memory Applications

Journal of electronic materials, 2018-09, Vol.47 (9), p.4938-4943

2018

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Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon

Journal of applied physics, 2006-03, Vol.99 (5)

2006

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Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films

Journal of applied physics, 2004-11, Vol.96 (9), p.5298-5307

2004

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Charge and current hysteresis in dysprosium-doped zirconium oxide thin films

Microelectronic engineering, 2015-11, Vol.147, p.55-58

2015

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Atomic layer deposition of high-k dielectrics on carbon nanoparticles

Thin solid films, 2013-07, Vol.538, p.16-20

2013

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Engineering structure and properties of hafnium oxide films by atomic layer deposition temperature

Thin solid films, 2005-05, Vol.479 (1), p.1-11

2005

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Effect of preparation conditions on properties of atomic layer deposited TiO2 films in Mo-TiO2-Al stacks

Thin solid films, 2006-07, Vol.510 (1-2), p.39-47

2006

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Analysis of leakage current mechanisms in RuO2–TiO2–RuO2 MIM structures

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1), p.1

2011

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Epitaxial growth of TiO2 films in a hydroxyl-free atomic layer deposition process

Journal of crystal growth, 2002-02, Vol.235 (1-4), p.293-299

2002

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Identification of spatial localization and energetic position of electrically active defects in amorphous high-k dielectrics for advanced devices

Journal of non-crystalline solids, 2008-01, Vol.354 (2-9), p.393-398

2008

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Mechanisms of suboxide growth and etching in atomic layer deposition of tantalum oxide from TaCl5 and H2O

Applied surface science, 1996-12, Vol.103 (4), p.331-341

1996

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Hafnium tetraiodide and oxygen as precursors for atomic layer deposition of hafnium oxide thin films

Thin solid films, 2002-10, Vol.418 (2), p.69-72

2002

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Composition and thickness determination of thin oxide films : comparison of different programs and methods

Journal of analytical atomic spectrometry, 1999, Vol.14 (3), p.523-527

1999

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Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al 2 O 3 dielectric thin filmson silicon

Journal of applied physics, 2006-03, Vol.99 (5), p.054902-054902-8

2006

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Precursor-dependent structural and electrical characteristics of atomic layer deposited films : Case study on titanium oxide

Materials science in semiconductor processing, 2006, Vol.9 (6), p.1084-1089

2006

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Influence of structure development on atomic layer deposition of TiO2 thin films

Applied surface science, , Vol.181 (3-4), p.339-348

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Einstellungen

Influence of growth temperature on the structure and electrical properties of high-permittivity TiO2 films in TiCl4-H2O and TiCl4-O3 atomic-layer-deposition processes

Atomic Layer Deposition of Zirconium Oxide on Carbon Nanoparticles

Influence of growth temperature on the structure and electrical properties of high‐permittivity Ti O 2 films in Ti C l 4 ‐ H 2 O and Ti C l 4 ‐ O 3 atomic‐layer‐deposition processes

Influence of growth temperature on the structure and electrical properties of high-permittivity TiO sub(2) films in TiCl sub(4)-H sub(2)O and TiCl sub(4)-O sub(3) atomic-layer-deposition processes

Atomic layer deposition of rutile-phase TiO sub(2) on RuO sub(2) from TiCl sub(4) and O sub(3): Growth of high-permittivity dielectrics with low leakage current

Tribological properties of PVD coatings with lubricating films

Optical characterization of HfO2 thin films grown by atomic layer deposition

Characterization of Ar/N 2 /H 2 middle-pressure RF discharge and application of the afterglow region for nitridation of GaAs

Characterization of Ar/N2/H2 middle-pressure RF discharge and application of the afterglow region for nitridation of GaAs

The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal–Insulator–Metal (MIM) Devices for Memory Applications

Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon

Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films

Charge and current hysteresis in dysprosium-doped zirconium oxide thin films

Atomic layer deposition of high-k dielectrics on carbon nanoparticles

Engineering structure and properties of hafnium oxide films by atomic layer deposition temperature

Effect of preparation conditions on properties of atomic layer deposited TiO2 films in Mo-TiO2-Al stacks

Analysis of leakage current mechanisms in RuO2–TiO2–RuO2 MIM structures

Epitaxial growth of TiO2 films in a hydroxyl-free atomic layer deposition process

Identification of spatial localization and energetic position of electrically active defects in amorphous high-k dielectrics for advanced devices

Mechanisms of suboxide growth and etching in atomic layer deposition of tantalum oxide from TaCl5 and H2O

Hafnium tetraiodide and oxygen as precursors for atomic layer deposition of hafnium oxide thin films

Composition and thickness determination of thin oxide films : comparison of different programs and methods

Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al 2 O 3 dielectric thin filmson silicon

Precursor-dependent structural and electrical characteristics of atomic layer deposited films : Case study on titanium oxide

Influence of structure development on atomic layer deposition of TiO2 thin films

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