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TFET Integrated Circuits: From Perspective Towards Reality

1st Edition 2021, 2020

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An analysis on the ambipolar current in Si double-gate tunnel FETs

Solid-state electronics, 2012-04, Vol.70, p.67-72

2012

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Nanotube Transistors as Direct Probes of the Trap Dynamics at Dielectric−Organic Interfaces of Interest in Organic Electronics and Solar Cells

Nano letters, 2008-11, Vol.8 (11), p.3619-3625

2008

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SSE Special Issue EuroSOI-2013

Solid-state electronics, 2014-07, Vol.97, p.1-1

2014

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Tunnel field effect transistor with increased ON current, low-k spacer and high-k dielectric

Applied physics letters, 2010-03, Vol.96 (12)

2010

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30-nm Tunnel FET With Improved Performance and Reduced Ambipolar Current

IEEE transactions on electron devices, 2011-06, Vol.58 (6), p.1649-1654

2011

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Carbon nanotube chemistry and assembly for electronic devices

Comptes rendus. Physique, 2009-05, Vol.10 (4), p.330-347

2009

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Tunnel FET Negative-Differential-Resistance Based 1T1C Refresh-Free-DRAM, 2T1C SRAM and 3T1C CAM

IEEE transactions on nanotechnology, 2021, Vol.20, p.270-277

2021

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CMOS Sensor Nodes With Sub-Picowatt TFET Memory

IEEE sensors journal, 2016-12, Vol.16 (23), p.8255-8262

2016

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Synthesis of tungsten oxo fluoroalkoxide complexes WO(OR)3L as precursors for growth of WOx nanomaterials by aerosol-assisted chemical vapor deposition

Solid state ionics, 2018-02, Vol.315, p.77-84

2018

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Synthesis of tungsten oxo fluoroalkoxide complexes WO(OR)^sub 3^L as precursors for growth of WO^sub x^ nanomaterials by aerosol-assisted chemical vapor deposition

Solid state ionics, 2018-02, Vol.315, p.77

2018

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A Simple Charge Model for Symmetric Double-Gate MOSFETs Adapted to Gate-Oxide-Thickness Asymmetry

IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.1002-1007

2012

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Errata to "Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFET" [Jul 12 1974-1979]

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.518-518

2013

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Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFET

IEEE transactions on electron devices, 2012-07, Vol.59 (7), p.1974-1979

2012

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3T-TFET bitcell based TFET-CMOS hybrid SRAM design for Ultra-Low Power applications

2016 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2016, p.361-366

2016

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Tunnel FET based refresh-free-DRAM

Design, Automation & Test in Europe Conference & Exhibition (DATE), 2017, 2017, p.914-917

2017

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Ultra-low leakage SRAM design with sub-32 nm tunnel FETs for low standby power applications

Micro & nano letters, 2016-12, Vol.11 (12), p.828-831

2016

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RRAM-based FPGA for “Normally Off, Instantly On” applications

Journal of parallel and distributed computing, 2014-06, Vol.74 (6), p.2441-2451

2014

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Integrating Multiple Resistive Memory Devices on a Single Carbon Nanotube

Advanced functional materials, 2013-12, Vol.23 (45), p.5631-5637

2013

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Bulk and FDSOI SRAM resiliency to radiation effects

2014 IEEE 57th International Midwest Symposium on Circuits and Systems (MWSCAS), 2014, p.655-658

2014

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Tunnel field effect transistor with increased ON current, low-k spacerand high-k dielectric

Applied physics letters, 2010-03, Vol.96 (12), p.122104-122104-3

2010

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RRAM-based FPGA for Normally Off, Instantly On applications: Computing with Future Nanotechnology

Journal of parallel and distributed computing, 2014, Vol.74 (6), p.2441-2451

2014

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Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-up

Solid-state electronics, 2013-12, Vol.90, p.99-106

2013

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RRAM-based FPGA for "normally off, instantly on" applications

2012 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2012, p.101-108

2012

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Self-heating characterization and extraction method for thermal resistance and capacitance in HV MOSFETs

IEEE electron device letters, 2004-03, Vol.25 (3), p.141-143

2004

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TFET Integrated Circuits: From Perspective Towards Reality

An analysis on the ambipolar current in Si double-gate tunnel FETs

Nanotube Transistors as Direct Probes of the Trap Dynamics at Dielectric−Organic Interfaces of Interest in Organic Electronics and Solar Cells

SSE Special Issue EuroSOI-2013

Tunnel field effect transistor with increased ON current, low-k spacer and high-k dielectric

30-nm Tunnel FET With Improved Performance and Reduced Ambipolar Current

Carbon nanotube chemistry and assembly for electronic devices

Tunnel FET Negative-Differential-Resistance Based 1T1C Refresh-Free-DRAM, 2T1C SRAM and 3T1C CAM

CMOS Sensor Nodes With Sub-Picowatt TFET Memory

Synthesis of tungsten oxo fluoroalkoxide complexes WO(OR)3L as precursors for growth of WOx nanomaterials by aerosol-assisted chemical vapor deposition

Synthesis of tungsten oxo fluoroalkoxide complexes WO(OR)^sub 3^L as precursors for growth of WO^sub x^ nanomaterials by aerosol-assisted chemical vapor deposition

A Simple Charge Model for Symmetric Double-Gate MOSFETs Adapted to Gate-Oxide-Thickness Asymmetry

Errata to "Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFET" [Jul 12 1974-1979]

Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFET

3T-TFET bitcell based TFET-CMOS hybrid SRAM design for Ultra-Low Power applications

Tunnel FET based refresh-free-DRAM

Ultra-low leakage SRAM design with sub-32 nm tunnel FETs for low standby power applications

RRAM-based FPGA for “Normally Off, Instantly On” applications

Integrating Multiple Resistive Memory Devices on a Single Carbon Nanotube

Bulk and FDSOI SRAM resiliency to radiation effects

Tunnel field effect transistor with increased ON current, low-k spacerand high-k dielectric

RRAM-based FPGA for Normally Off, Instantly On applications: Computing with Future Nanotechnology

Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-up

RRAM-based FPGA for "normally off, instantly on" applications

Self-heating characterization and extraction method for thermal resistance and capacitance in HV MOSFETs

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