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GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration

Journal of crystal growth, 2011-01, Vol.315 (1), p.37-47

2011

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Quantitative Characterization of Nanometer-Scale Electric Fields via Momentum-Resolved STEM

Nano letters, 2021-03, Vol.21 (5), p.2018-2025

2021

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Quantification of Bi distribution in MOVPE-grown Ga(AsBi) via HAADF STEM

Journal of crystal growth, 2016-01, Vol.433, p.89-96

2016

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GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient

Journal of crystal growth, 2017-04, Vol.464, p.2-7

2017

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Self-catalyzed GaP nanowire MOVPE growth on Si

Journal of crystal growth, 2023-05, Vol.609, p.127138, Article 127138

2023

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Visualization of Light Elements using 4D STEM: The Layered‐to‐Rock Salt Phase Transition in LiNiO2 Cathode Material

Advanced energy materials, 2020-07, Vol.10 (25), p.n/a

2020

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Effect of growth interruption on Ga(N, As)/Ga(As, Sb)/Ga(N, As) type-II-“W” quantum well heterostructures

Journal of crystal growth, 2022-03, Vol.582, p.126501, Article 126501

2022

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Direct Growth of III-V/Silicon Triple-Junction Solar Cells With 19.7% Efficiency

IEEE journal of photovoltaics, 2018-11, Vol.8 (6), p.1590-1595

2018

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Anomalous Angle-Dependent Magnetotransport Properties of Single InAs Nanowires

Nano letters, 2020-01, Vol.20 (1), p.618-624

2020

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Progress in Sputter Growth of β‐Ga2O3 by Applying Pulsed‐Mode Operation

Physica status solidi. A, Applications and materials science, 2020-05, Vol.217 (10), p.n/a

2020

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Influence of plasmon excitations on atomic-resolution quantitative 4D scanning transmission electron microscopy

Scientific reports, 2020-10, Vol.10 (1), p.17890-17890, Article 17890

2020

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MOVPE Grown Gallium Phosphide-Silicon Heterojunction Solar Cells

IEEE journal of photovoltaics, 2017-03, Vol.7 (2), p.502-507

2017

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Single- and dual-variant atomic ordering in GaAsP compositionally graded buffers on GaP and Si substrates

Journal of crystal growth, 2019-01, Vol.506 (C), p.61-70

2019

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Thermomigration and Soret effect in NaxCoO2 as thermoelectric material: Preparation and characterization of sodium cobaltate thin films

Physica status solidi. A, Applications and materials science, 2016-05, Vol.213 (5), p.1284-1295

2016

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Simultaneous Quantification of Indium and Nitrogen Concentration in InGaNAs Using HAADF-STEM

Microscopy and microanalysis, 2014-12, Vol.20 (6), p.1740-1752

2014

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Interface engineering and characterization at the atomic‐scale of pure and mixed ion layer gas reaction buffer layers in chalcopyrite thin‐film solar cells

Progress in photovoltaics, 2015-06, Vol.23 (6), p.705-716

2015

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Application of transmission electron microscopy for microstructural characterization of perfluoropentacene thin films

Journal of applied physics, 2011-10, Vol.110 (7), p.073514-073514-6

2011

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Indirect in situ characterization of Si(1 0 0) substrates at the initial stage of III–V heteroepitaxy

Journal of crystal growth, 2011-01, Vol.315 (1), p.16-21

2011

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Correlation between hetero-interface properties and photoluminescence efficiency of Ga(NAsP)/(BGa)P multi-quantum well structures on (0 0 1) Si substrate

Journal of crystal growth, 2011-01, Vol.315 (1), p.28-31

2011

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Length-extension resonator as a force sensor for high-resolution frequency-modulation atomic force microscopy in air

Beilstein journal of nanotechnology, 2016, Vol.7 (1), p.432-438

2016

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Exfoliation of two-dimensional polymer single crystals into thin sheets and investigations of their surface structure by high-resolution atomic force microscopy

Nanoscale, 2017-07, Vol.9 (27), p.9481-9490

2017

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Recent Developments in the Application of Phosphorescent Iridium(III) Complex Systems

Advanced materials (Weinheim), 2009-11, Vol.21 (44), p.4418-4441

2009

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Ultrahigh Ionic Exclusion through Carbon Nanomembranes

Advanced materials (Weinheim), 2020-02, Vol.32 (8), p.e1907850-n/a

2020

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Insights into the Si─H Bonding Configuration at the Amorphous/Crystalline Silicon Interface of Silicon Heterojunction Solar Cells by Raman and FTIR Spectroscopy

Advanced materials (Weinheim), 2023-11, Vol.35 (47), p.e2306351-e2306351

2023

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Carbon Nanomembranes (CNMs) Supported by Polymer: Mechanics and Gas Permeation

Advanced materials (Weinheim), 2014-06, Vol.26 (21), p.3421-3426

2014

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GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration

Quantitative Characterization of Nanometer-Scale Electric Fields via Momentum-Resolved STEM

Quantification of Bi distribution in MOVPE-grown Ga(AsBi) via HAADF STEM

GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient

Self-catalyzed GaP nanowire MOVPE growth on Si

Visualization of Light Elements using 4D STEM: The Layered‐to‐Rock Salt Phase Transition in LiNiO2 Cathode Material

Effect of growth interruption on Ga(N, As)/Ga(As, Sb)/Ga(N, As) type-II-“W” quantum well heterostructures

Direct Growth of III-V/Silicon Triple-Junction Solar Cells With 19.7% Efficiency

Anomalous Angle-Dependent Magnetotransport Properties of Single InAs Nanowires

Progress in Sputter Growth of β‐Ga2O3 by Applying Pulsed‐Mode Operation

Influence of plasmon excitations on atomic-resolution quantitative 4D scanning transmission electron microscopy

MOVPE Grown Gallium Phosphide-Silicon Heterojunction Solar Cells

Single- and dual-variant atomic ordering in GaAsP compositionally graded buffers on GaP and Si substrates

Thermomigration and Soret effect in NaxCoO2 as thermoelectric material: Preparation and characterization of sodium cobaltate thin films

Simultaneous Quantification of Indium and Nitrogen Concentration in InGaNAs Using HAADF-STEM

Interface engineering and characterization at the atomic‐scale of pure and mixed ion layer gas reaction buffer layers in chalcopyrite thin‐film solar cells

Application of transmission electron microscopy for microstructural characterization of perfluoropentacene thin films

Indirect in situ characterization of Si(1 0 0) substrates at the initial stage of III–V heteroepitaxy

Correlation between hetero-interface properties and photoluminescence efficiency of Ga(NAsP)/(BGa)P multi-quantum well structures on (0 0 1) Si substrate

Length-extension resonator as a force sensor for high-resolution frequency-modulation atomic force microscopy in air

Exfoliation of two-dimensional polymer single crystals into thin sheets and investigations of their surface structure by high-resolution atomic force microscopy

Recent Developments in the Application of Phosphorescent Iridium(III) Complex Systems

Ultrahigh Ionic Exclusion through Carbon Nanomembranes

Insights into the Si─H Bonding Configuration at the Amorphous/Crystalline Silicon Interface of Silicon Heterojunction Solar Cells by Raman and FTIR Spectroscopy

Carbon Nanomembranes (CNMs) Supported by Polymer: Mechanics and Gas Permeation

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