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GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration

Journal of crystal growth, 2011-01, Vol.315 (1), p.37-47

2011

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Quantification of Bi distribution in MOVPE-grown Ga(AsBi) via HAADF STEM

Journal of crystal growth, 2016-01, Vol.433, p.89-96

2016

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Sub-picosecond acoustic pulses at buried GaP/Si interfaces

Applied physics letters, 2017-08, Vol.111 (6)

2017

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Influence of crystal polarity on crystal defects in GaP grown on exact Si (001)

Journal of applied physics, 2011-04, Vol.109 (8), p.083529-083529-6

2011

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Measuring Interatomic Bonding and Charge Redistributions in Defects by Combining 4D-STEM and STEM Multislice Simulations

Microscopy and microanalysis, 2020-08, Vol.26 (S2), p.452-454

2020

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GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient

Journal of crystal growth, 2017-04, Vol.464, p.2-7

2017

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Self-catalyzed GaP nanowire MOVPE growth on Si

Journal of crystal growth, 2023-05, Vol.609, p.127138, Article 127138

2023

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In situ verification of single-domain III-V on Si(100) growth via metal-organic vapor phase epitaxy

Applied physics letters, 2008-10, Vol.93 (17)

2008

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Ge/SiGe parabolic quantum wells

Journal of physics. D, Applied physics, 2019-10, Vol.52 (41), p.415105

2019

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Effect of growth interruption on Ga(N, As)/Ga(As, Sb)/Ga(N, As) type-II-“W” quantum well heterostructures

Journal of crystal growth, 2022-03, Vol.582, p.126501, Article 126501

2022

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Direct Growth of III-V/Silicon Triple-Junction Solar Cells With 19.7% Efficiency

IEEE journal of photovoltaics, 2018-11, Vol.8 (6), p.1590-1595

2018

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Progress in Sputter Growth of β‐Ga2O3 by Applying Pulsed‐Mode Operation

Physica status solidi. A, Applications and materials science, 2020-05, Vol.217 (10), p.n/a

2020

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Coherent optical and acoustic phonons generated at lattice-matched GaP/Si(0 0 1) heterointerfaces

Journal of physics. Condensed matter, 2019-03, Vol.31 (9), p.94003-094003

2019

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Influence of plasmon excitations on atomic-resolution quantitative 4D scanning transmission electron microscopy

Scientific reports, 2020-10, Vol.10 (1), p.17890-17890, Article 17890

2020

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Quantitative atomic resolution at interfaces: Subtraction of the background in STEM images with the example of (Ga,In)P/GaAs structures

Journal of applied physics, 2017-01, Vol.121 (2)

2017

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MOVPE Grown Gallium Phosphide-Silicon Heterojunction Solar Cells

IEEE journal of photovoltaics, 2017-03, Vol.7 (2), p.502-507

2017

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Interface morphology and composition of Ga(NAsP) quantum well structures for monolithically integrated LASERs on silicon substrates

Journal of physics. D, Applied physics, 2016-02, Vol.49 (7), p.75108-75116

2016

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Single- and dual-variant atomic ordering in GaAsP compositionally graded buffers on GaP and Si substrates

Journal of crystal growth, 2019-01, Vol.506 (C), p.61-70

2019

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Coherent phonon spectroscopy characterization of electronic bands at buried semiconductor heterointerfaces

Applied physics letters, 2016-02, Vol.108 (5), p.51607

2016

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Correlation of the nanostructure with optoelectronic properties during rapid thermal annealing of Ga(NAsP) quantum wells grown on Si(001) substrates

Journal of applied physics, 2016-01, Vol.119 (2)

2016

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Thermomigration and Soret effect in NaxCoO2 as thermoelectric material: Preparation and characterization of sodium cobaltate thin films

Physica status solidi. A, Applications and materials science, 2016-05, Vol.213 (5), p.1284-1295

2016

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Simultaneous Quantification of Indium and Nitrogen Concentration in InGaNAs Using HAADF-STEM

Microscopy and microanalysis, 2014-12, Vol.20 (6), p.1740-1752

2014

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Interface engineering and characterization at the atomic‐scale of pure and mixed ion layer gas reaction buffer layers in chalcopyrite thin‐film solar cells

Progress in photovoltaics, 2015-06, Vol.23 (6), p.705-716

2015

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Application of transmission electron microscopy for microstructural characterization of perfluoropentacene thin films

Journal of applied physics, 2011-10, Vol.110 (7), p.073514-073514-6

2011

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Indirect in situ characterization of Si(1 0 0) substrates at the initial stage of III–V heteroepitaxy

Journal of crystal growth, 2011-01, Vol.315 (1), p.16-21

2011

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GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration

Quantification of Bi distribution in MOVPE-grown Ga(AsBi) via HAADF STEM

Sub-picosecond acoustic pulses at buried GaP/Si interfaces

Influence of crystal polarity on crystal defects in GaP grown on exact Si (001)

Measuring Interatomic Bonding and Charge Redistributions in Defects by Combining 4D-STEM and STEM Multislice Simulations

GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient

Self-catalyzed GaP nanowire MOVPE growth on Si

In situ verification of single-domain III-V on Si(100) growth via metal-organic vapor phase epitaxy

Ge/SiGe parabolic quantum wells

Effect of growth interruption on Ga(N, As)/Ga(As, Sb)/Ga(N, As) type-II-“W” quantum well heterostructures

Direct Growth of III-V/Silicon Triple-Junction Solar Cells With 19.7% Efficiency

Progress in Sputter Growth of β‐Ga2O3 by Applying Pulsed‐Mode Operation

Coherent optical and acoustic phonons generated at lattice-matched GaP/Si(0 0 1) heterointerfaces

Influence of plasmon excitations on atomic-resolution quantitative 4D scanning transmission electron microscopy

Quantitative atomic resolution at interfaces: Subtraction of the background in STEM images with the example of (Ga,In)P/GaAs structures

MOVPE Grown Gallium Phosphide-Silicon Heterojunction Solar Cells

Interface morphology and composition of Ga(NAsP) quantum well structures for monolithically integrated LASERs on silicon substrates

Single- and dual-variant atomic ordering in GaAsP compositionally graded buffers on GaP and Si substrates

Coherent phonon spectroscopy characterization of electronic bands at buried semiconductor heterointerfaces

Correlation of the nanostructure with optoelectronic properties during rapid thermal annealing of Ga(NAsP) quantum wells grown on Si(001) substrates

Thermomigration and Soret effect in NaxCoO2 as thermoelectric material: Preparation and characterization of sodium cobaltate thin films

Simultaneous Quantification of Indium and Nitrogen Concentration in InGaNAs Using HAADF-STEM

Interface engineering and characterization at the atomic‐scale of pure and mixed ion layer gas reaction buffer layers in chalcopyrite thin‐film solar cells

Application of transmission electron microscopy for microstructural characterization of perfluoropentacene thin films

Indirect in situ characterization of Si(1 0 0) substrates at the initial stage of III–V heteroepitaxy

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