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GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration

Journal of crystal growth, 2011-01, Vol.315 (1), p.37-47

2011

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Quantitative Characterization of Nanometer-Scale Electric Fields via Momentum-Resolved STEM

Nano letters, 2021-03, Vol.21 (5), p.2018-2025

2021

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Quantification of Bi distribution in MOVPE-grown Ga(AsBi) via HAADF STEM

Journal of crystal growth, 2016-01, Vol.433, p.89-96

2016

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Measuring Interatomic Bonding and Charge Redistributions in Defects by Combining 4D-STEM and STEM Multislice Simulations

Microscopy and microanalysis, 2020-08, Vol.26 (S2), p.452-454

2020

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GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient

Journal of crystal growth, 2017-04, Vol.464, p.2-7

2017

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Self-catalyzed GaP nanowire MOVPE growth on Si

Journal of crystal growth, 2023-05, Vol.609, p.127138, Article 127138

2023

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Visualization of Light Elements using 4D STEM: The Layered‐to‐Rock Salt Phase Transition in LiNiO2 Cathode Material

Advanced energy materials, 2020-07, Vol.10 (25), p.n/a

2020

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Ge/SiGe parabolic quantum wells

Journal of physics. D, Applied physics, 2019-10, Vol.52 (41), p.415105

2019

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Effect of growth interruption on Ga(N, As)/Ga(As, Sb)/Ga(N, As) type-II-“W” quantum well heterostructures

Journal of crystal growth, 2022-03, Vol.582, p.126501, Article 126501

2022

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Direct Growth of III-V/Silicon Triple-Junction Solar Cells With 19.7% Efficiency

IEEE journal of photovoltaics, 2018-11, Vol.8 (6), p.1590-1595

2018

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Anomalous Angle-Dependent Magnetotransport Properties of Single InAs Nanowires

Nano letters, 2020-01, Vol.20 (1), p.618-624

2020

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Progress in Sputter Growth of β‐Ga2O3 by Applying Pulsed‐Mode Operation

Physica status solidi. A, Applications and materials science, 2020-05, Vol.217 (10), p.n/a

2020

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Coherent optical and acoustic phonons generated at lattice-matched GaP/Si(0 0 1) heterointerfaces

Journal of physics. Condensed matter, 2019-03, Vol.31 (9), p.94003-094003

2019

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Influence of plasmon excitations on atomic-resolution quantitative 4D scanning transmission electron microscopy

Scientific reports, 2020-10, Vol.10 (1), p.17890-17890, Article 17890

2020

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MOVPE Grown Gallium Phosphide-Silicon Heterojunction Solar Cells

IEEE journal of photovoltaics, 2017-03, Vol.7 (2), p.502-507

2017

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Interface morphology and composition of Ga(NAsP) quantum well structures for monolithically integrated LASERs on silicon substrates

Journal of physics. D, Applied physics, 2016-02, Vol.49 (7), p.75108-75116

2016

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Photochemistry of glyoxylate embedded in sodium chloride clusters, a laboratory model for tropospheric sea-salt aerosols

Physical chemistry chemical physics : PCCP, 2018, Vol.20 (12), p.8143-8151

2018

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Photodissociation spectroscopy of protonated leucine enkephalin

Physical chemistry chemical physics : PCCP, 2017-05, Vol.19 (17), p.10786-10795

2017

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Single- and dual-variant atomic ordering in GaAsP compositionally graded buffers on GaP and Si substrates

Journal of crystal growth, 2019-01, Vol.506 (C), p.61-70

2019

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Thermomigration and Soret effect in NaxCoO2 as thermoelectric material: Preparation and characterization of sodium cobaltate thin films

Physica status solidi. A, Applications and materials science, 2016-05, Vol.213 (5), p.1284-1295

2016

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Simultaneous Quantification of Indium and Nitrogen Concentration in InGaNAs Using HAADF-STEM

Microscopy and microanalysis, 2014-12, Vol.20 (6), p.1740-1752

2014

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Interface engineering and characterization at the atomic‐scale of pure and mixed ion layer gas reaction buffer layers in chalcopyrite thin‐film solar cells

Progress in photovoltaics, 2015-06, Vol.23 (6), p.705-716

2015

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Indirect in situ characterization of Si(1 0 0) substrates at the initial stage of III–V heteroepitaxy

Journal of crystal growth, 2011-01, Vol.315 (1), p.16-21

2011

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Correlation between hetero-interface properties and photoluminescence efficiency of Ga(NAsP)/(BGa)P multi-quantum well structures on (0 0 1) Si substrate

Journal of crystal growth, 2011-01, Vol.315 (1), p.28-31

2011

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Length-extension resonator as a force sensor for high-resolution frequency-modulation atomic force microscopy in air

Beilstein journal of nanotechnology, 2016, Vol.7 (1), p.432-438

2016

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GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration

Quantitative Characterization of Nanometer-Scale Electric Fields via Momentum-Resolved STEM

Quantification of Bi distribution in MOVPE-grown Ga(AsBi) via HAADF STEM

Measuring Interatomic Bonding and Charge Redistributions in Defects by Combining 4D-STEM and STEM Multislice Simulations

GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient

Self-catalyzed GaP nanowire MOVPE growth on Si

Visualization of Light Elements using 4D STEM: The Layered‐to‐Rock Salt Phase Transition in LiNiO2 Cathode Material

Ge/SiGe parabolic quantum wells

Effect of growth interruption on Ga(N, As)/Ga(As, Sb)/Ga(N, As) type-II-“W” quantum well heterostructures

Direct Growth of III-V/Silicon Triple-Junction Solar Cells With 19.7% Efficiency

Anomalous Angle-Dependent Magnetotransport Properties of Single InAs Nanowires

Progress in Sputter Growth of β‐Ga2O3 by Applying Pulsed‐Mode Operation

Coherent optical and acoustic phonons generated at lattice-matched GaP/Si(0 0 1) heterointerfaces

Influence of plasmon excitations on atomic-resolution quantitative 4D scanning transmission electron microscopy

MOVPE Grown Gallium Phosphide-Silicon Heterojunction Solar Cells

Interface morphology and composition of Ga(NAsP) quantum well structures for monolithically integrated LASERs on silicon substrates

Photochemistry of glyoxylate embedded in sodium chloride clusters, a laboratory model for tropospheric sea-salt aerosols

Photodissociation spectroscopy of protonated leucine enkephalin

Single- and dual-variant atomic ordering in GaAsP compositionally graded buffers on GaP and Si substrates

Thermomigration and Soret effect in NaxCoO2 as thermoelectric material: Preparation and characterization of sodium cobaltate thin films

Simultaneous Quantification of Indium and Nitrogen Concentration in InGaNAs Using HAADF-STEM

Interface engineering and characterization at the atomic‐scale of pure and mixed ion layer gas reaction buffer layers in chalcopyrite thin‐film solar cells

Indirect in situ characterization of Si(1 0 0) substrates at the initial stage of III–V heteroepitaxy

Correlation between hetero-interface properties and photoluminescence efficiency of Ga(NAsP)/(BGa)P multi-quantum well structures on (0 0 1) Si substrate

Length-extension resonator as a force sensor for high-resolution frequency-modulation atomic force microscopy in air

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