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Ultralow Off‐State Current and Multilevel Resistance State in Van der Waals Heterostructure Memristors

Advanced functional materials, 2024-04, Vol.34 (15), p.n/a

2024

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Breakdown Enhancement and Current Collapse Suppression in AlGaN/GaN HEMT by NiOX/SiNX and Al2O3/SiNX as Gate Dielectric Layer and Passivation Layer

IEEE electron device letters, 2019-12, Vol.40 (12), p.1921-1924

2019

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Comprehensive Study for OFF-State Hot Carrier Degrdation of Scaled nMOSFETs in DRAM

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-4

2019

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Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p-Gan Gate HEMTs

IEEE transactions on power electronics, 2022-05, Vol.37 (5), p.6018-6025

2022

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MAX Phase Ti2AlN for HfO2 Memristors with Ultra‐Low Reset Current Density and Large On/Off Ratio

Advanced functional materials, 2024-07, Vol.34 (29), p.n/a

2024

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Characterization and optimization of MIS-HEMTs device of high~k dielectric material on quaternary barrier of Al0.42ln0.03Ga0.55N/UID-AIN/GaN/GaN heterostructure for high power switching application

Applied surface science, 2019-09, Vol.488, p.427-433

2019

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Investigation of the Off-State Degradation in Advanced FinFET Technology-Part I: Experiments and Analysis

IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1-7

2023

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Realizing Efficient Volume Depletion in SOI Junctionless FETs

IEEE journal of the Electron Devices Society, 2016-05, Vol.4 (3), p.110-115

2016

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Study of the impact of interface traps associated with SiN X passivation on AlGaN/GaN MIS-HEMTs

Semiconductor science and technology, 2022-03, Vol.37 (3), p.35005

2022

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Effect of OFF-State Stress on Gate-Induced Drain Leakage by Interface Traps in Buried-Gate FETs

IEEE transactions on electron devices, 2019-12, Vol.66 (12), p.5126-5132

2019

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The effect of SiN x film for H plasma implantation in p-GaN/AlGaN/GaN high electron mobility transistors

Applied physics express, 2022-07, Vol.15 (7), p.71010

2022

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OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type p-GaN Gate HEMTs

IEEE journal of emerging and selected topics in power electronics, 2021-06, Vol.9 (3), p.3686-3694

2021

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Impact of Implanted Edge Termination on Vertical β-Ga2O3 Schottky Barrier Diodes Under OFF-State Stressing

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.3948-3953

2020

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Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics

Nanotechnology, 2018-05, Vol.29 (21)

2018

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Effect of Source Electrostatic Interaction on the Off-State Leakage Current of p-GaN Gate HEMTs

IEEE electron device letters, 2024-10, Vol.45 (10), p.1728-1731

2024

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Effect of Oil‐Soluble Graphene on the Tribological and Rheological Properties of Magnetorheological Fluids

Advanced engineering materials, 2022-09, Vol.24 (9), p.n/a

2022

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Field Induced Off‐State Instability in InGaZnO Thin‐Film Transistor and its Impact on Synaptic Circuits

Advanced electronic materials, 2024-08, Vol.10 (8), p.n/a

2024

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On the Understanding and Modeling of Non-Negligible Subthreshold-State Degradation (SSD) in Sub-20-nm DRAM Technology

IEEE electron device letters, 2024-09, Vol.45 (9), p.1582-1585

2024

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High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown

IEEE electron device letters, 2019-04, Vol.40 (4), p.530-533

2019

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Response to levodopa in Parkinson's disease over time. A 4-year follow-up study

Parkinsonism & related disorders, 2023-11, Vol.116, p.105852-105852, Article 105852

2023

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Optimisation of sub-threshold and saturation parameters of gate stack double gate (GSDG) MOSFET using Moth-Flame optimization algorithm

Materials today : proceedings, 2023, Vol.79, p.308-315

2023

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Predicting household air conditioners’ on/off state considering occupants’ preference diversity: A study in Chongqing, China

Energy and buildings, 2021-12, Vol.253, p.111516, Article 111516

2021

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Investigation of the Off-State Degradation in Advanced FinFET Technology-Part II: Compact Aging Model and Impact on Circuits

IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1-7

2023

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Investigation of Dynamic } Under Switching Operation in Schottky-Type p-GaN Gate HEMTs

IEEE transactions on electron devices, 2019-09, Vol.66 (9), p.3789-3794

2019

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Adaptive Sensing Voltage Modulation Technique in Cross-Point OTS-PRAM

IEEE transactions on very large scale integration (VLSI) systems, 2021-04, Vol.29 (4), p.631-642

2021

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Ultralow Off‐State Current and Multilevel Resistance State in Van der Waals Heterostructure Memristors

Breakdown Enhancement and Current Collapse Suppression in AlGaN/GaN HEMT by NiOX/SiNX and Al2O3/SiNX as Gate Dielectric Layer and Passivation Layer

Comprehensive Study for OFF-State Hot Carrier Degrdation of Scaled nMOSFETs in DRAM

Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p-Gan Gate HEMTs

MAX Phase Ti2AlN for HfO2 Memristors with Ultra‐Low Reset Current Density and Large On/Off Ratio

Characterization and optimization of MIS-HEMTs device of high~k dielectric material on quaternary barrier of Al0.42ln0.03Ga0.55N/UID-AIN/GaN/GaN heterostructure for high power switching application

Investigation of the Off-State Degradation in Advanced FinFET Technology-Part I: Experiments and Analysis

Realizing Efficient Volume Depletion in SOI Junctionless FETs

Study of the impact of interface traps associated with SiN X passivation on AlGaN/GaN MIS-HEMTs

Effect of OFF-State Stress on Gate-Induced Drain Leakage by Interface Traps in Buried-Gate FETs

The effect of SiN x film for H plasma implantation in p-GaN/AlGaN/GaN high electron mobility transistors

OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type p-GaN Gate HEMTs

Impact of Implanted Edge Termination on Vertical β-Ga2O3 Schottky Barrier Diodes Under OFF-State Stressing

Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics

Effect of Source Electrostatic Interaction on the Off-State Leakage Current of p-GaN Gate HEMTs

Effect of Oil‐Soluble Graphene on the Tribological and Rheological Properties of Magnetorheological Fluids

Field Induced Off‐State Instability in InGaZnO Thin‐Film Transistor and its Impact on Synaptic Circuits

On the Understanding and Modeling of Non-Negligible Subthreshold-State Degradation (SSD) in Sub-20-nm DRAM Technology

High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown

Response to levodopa in Parkinson's disease over time. A 4-year follow-up study

Optimisation of sub-threshold and saturation parameters of gate stack double gate (GSDG) MOSFET using Moth-Flame optimization algorithm

Predicting household air conditioners’ on/off state considering occupants’ preference diversity: A study in Chongqing, China

Investigation of the Off-State Degradation in Advanced FinFET Technology-Part II: Compact Aging Model and Impact on Circuits

Investigation of Dynamic } Under Switching Operation in Schottky-Type p-GaN Gate HEMTs

Adaptive Sensing Voltage Modulation Technique in Cross-Point OTS-PRAM

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