UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 791

Sortiert nach

Intrinsic luminescence in alkali metal sulfates

Journal of luminescence, 2016-03, Vol.171, p.9-12

2016

Volltextzugriff (PDF)

Enhanced Performance of Organic Field‐Effect Transistor with Bi‐Functional N‐Type Organic Semiconductor Layer

Advanced electronic materials, 2024-03, Vol.10 (3), p.n/a

2024

Volltextzugriff (PDF)

Hole Trapping: Hole‐Trapping Effect of the Aliphatic‐Amine Based Electron Injection Materials in the Operation of OLEDs to Facilitate the Electron Injection (Adv. Electron. Mater. 3/2015)

Advanced electronic materials, 2015-03, Vol.1 (3), p.n/a

2015

Volltextzugriff (PDF)

Hybrids of Two-Dimensional Ti3C2 and TiO2 Exposing {001} Facets toward Enhanced Photocatalytic Activity

ACS applied materials & interfaces, 2016-03, Vol.8 (9), p.6051-6060

2016

Volltextzugriff (PDF)

Hole‐Trapping Effect of the Aliphatic‐Amine Based Electron Injection Materials in the Operation of OLEDs to Facilitate the Electron Injection

Advanced electronic materials, 2015-03, Vol.1 (3), p.n/a

2015

Volltextzugriff (PDF)

Improved photocatalytic activities of g-C3N4 nanosheets by effectively trapping holes with halogen-induced surface polarization and 2,4-dichlorophenol decomposition mechanism

Applied catalysis. B, Environmental, 2017-12, Vol.218, p.60-67

2017

Volltextzugriff (PDF)

Electron deficient Bi3+δ serves as N2 absorption sites and inhibits carriers recombination to enhance N2 photo-fixation in BiOBr/TiO2 S-scheme heterojunction

Journal of colloid and interface science, 2024-06, Vol.663, p.61-72

2024

Volltextzugriff (PDF)

A Comparative Study of Different Physics-Based NBTI Models

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.901-916

2013

Volltextzugriff (PDF)

Systematic trends in electron–hole pair trapping efficiency of rare earth doped YBO3 under vacuum ultraviolet excitation

Journal of luminescence, 2015-05, Vol.161, p.403-410

2015

Volltextzugriff (PDF)

Sensitive photoelectrochemical detection of azomycin on Bi2S3/Bi2WO6 heterojunction using ascorbic acid as a hole-trapping agent

Journal of photochemistry and photobiology. A, Chemistry., 2023-06, Vol.440, p.114637, Article 114637

2023

Volltextzugriff (PDF)

Light Emission Mechanisms in CuInS2 Quantum Dots Evaluated by Spectral Electrochemistry

ACS photonics, 2017-10, Vol.4 (10), p.2425-2435

2017

Volltextzugriff (PDF)

Oxygen vacancy related hole fast trapping in high mobility cubic-Ge/ZrO2 interface

Journal of physics. D, Applied physics, 2023-02, Vol.56 (10)

2023

Volltextzugriff (PDF)

Change point analysis of matrix dependent photoluminescence intermittency of single CdSe/ZnS quantum dots with intermediate intensity levels

Chemical physics, 2012-10, Vol.406, p.9-14

2012

Volltextzugriff (PDF)

Realizing high-performance bluish-green ionic thermally activated delayed fluorescence materials through counterion regulation

Chemical engineering journal (Lausanne, Switzerland : 1996), 2023-03, Vol.460, p.141836, Article 141836

2023

Volltextzugriff (PDF)

Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell

IEEE electron device letters, 2024-04, Vol.45 (4), p.562-565

2024

Volltextzugriff (PDF)

Fluoride-etched TiO2 microspheres modified with Al2O3 for enhanced photocatalytic conversion of NOx into nitrate ions

Catalysis today, 2024-07, Vol.437, p.114749, Article 114749

2024

Volltextzugriff (PDF)

On the Understanding of Defects in Short-Term Negative Bias Temperature Instability (NBTI) for Sub-20-nm DRAM Technology

IEEE electron device letters, 2023-06, Vol.44 (6), p.939-942

2023

Volltextzugriff (PDF)

Mechanisms of negative bias instability of commercial SiC MOSFETs observed by current transients

Solid-state electronics, 2024-05, Vol.215, p.108880, Article 108880

2024

Volltextzugriff (PDF)

Comparing Quasiparticle H2O Level Alignment on Anatase and Rutile TiO2

ACS catalysis, 2015-07, Vol.5, p.4242-4254

2015

Volltextzugriff (PDF)

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines (Basel), 2021-03, Vol.12 (3), p.327

2021

Volltextzugriff (PDF)

BTI Analysis Tool-Modeling of NBTI DC, AC Stress and Recovery Time Kinetics, Nitrogen Impact, and EOL Estimation

IEEE transactions on electron devices, 2018-02, Vol.65 (2), p.392-403

2018

Volltextzugriff (PDF)

Gate-Bias Induced Threshold Voltage (VTH) Instability in P-N Junction/AlGaN/GaN HEMT

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3654-3659

2022

Volltextzugriff (PDF)

Bi quantum dots on rutile TiO2 as hole trapping centers for efficient photocatalytic bromate reduction under visible light illumination

Applied catalysis. B, Environmental, 2017-12, Vol.218, p.111-118

2017

Volltextzugriff (PDF)

Ultrafast Measurements and Physical Modeling of NBTI Stress and Recovery in RMG FinFETs Under Diverse DC-AC Experimental Conditions

IEEE transactions on electron devices, 2018-01, Vol.65 (1), p.23-30

2018

Volltextzugriff (PDF)

A review of NBTI mechanisms and models

Microelectronics and reliability, 2018-02, Vol.81, p.127-135

2018

Volltextzugriff (PDF)

1 – 25 von 791

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(640)
Mit Volltextzugriff
(774)

Publikationsform

1 weiteren anzeigen...

Weniger anzeigen...

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(655)
Physical Sciences
(529)
Physics
(443)
Trapping
(438)
Holes
(314)
Technology
(306)
Physics, Applied
(274)
Materials Science
(195)
Engineering
(192)
Engineering, Electrical & Electronic
(153)
Hole Trapping
(129)
Exact Sciences And Technology
(114)
Materials Science, Multidisciplinary
(113)
Electrons
(97)
Black Holes
(85)
Chemistry
(79)
Optics
(73)
Physics, Condensed Matter
(73)
Science & Technology - Other Topics
(72)
Silicon
(66)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(5)

Menü

Weitere Dienste

Einstellungen

Intrinsic luminescence in alkali metal sulfates

Enhanced Performance of Organic Field‐Effect Transistor with Bi‐Functional N‐Type Organic Semiconductor Layer

Hole Trapping: Hole‐Trapping Effect of the Aliphatic‐Amine Based Electron Injection Materials in the Operation of OLEDs to Facilitate the Electron Injection (Adv. Electron. Mater. 3/2015)

Hybrids of Two-Dimensional Ti3C2 and TiO2 Exposing {001} Facets toward Enhanced Photocatalytic Activity

Hole‐Trapping Effect of the Aliphatic‐Amine Based Electron Injection Materials in the Operation of OLEDs to Facilitate the Electron Injection

Improved photocatalytic activities of g-C3N4 nanosheets by effectively trapping holes with halogen-induced surface polarization and 2,4-dichlorophenol decomposition mechanism

Electron deficient Bi3+δ serves as N2 absorption sites and inhibits carriers recombination to enhance N2 photo-fixation in BiOBr/TiO2 S-scheme heterojunction

A Comparative Study of Different Physics-Based NBTI Models

Systematic trends in electron–hole pair trapping efficiency of rare earth doped YBO3 under vacuum ultraviolet excitation

Sensitive photoelectrochemical detection of azomycin on Bi2S3/Bi2WO6 heterojunction using ascorbic acid as a hole-trapping agent

Light Emission Mechanisms in CuInS2 Quantum Dots Evaluated by Spectral Electrochemistry

Oxygen vacancy related hole fast trapping in high mobility cubic-Ge/ZrO2 interface

Change point analysis of matrix dependent photoluminescence intermittency of single CdSe/ZnS quantum dots with intermediate intensity levels

Realizing high-performance bluish-green ionic thermally activated delayed fluorescence materials through counterion regulation

Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell

Fluoride-etched TiO2 microspheres modified with Al2O3 for enhanced photocatalytic conversion of NOx into nitrate ions

On the Understanding of Defects in Short-Term Negative Bias Temperature Instability (NBTI) for Sub-20-nm DRAM Technology

Mechanisms of negative bias instability of commercial SiC MOSFETs observed by current transients

Comparing Quasiparticle H2O Level Alignment on Anatase and Rutile TiO2

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

BTI Analysis Tool-Modeling of NBTI DC, AC Stress and Recovery Time Kinetics, Nitrogen Impact, and EOL Estimation

Gate-Bias Induced Threshold Voltage (VTH) Instability in P-N Junction/AlGaN/GaN HEMT

Bi quantum dots on rutile TiO2 as hole trapping centers for efficient photocatalytic bromate reduction under visible light illumination

Ultrafast Measurements and Physical Modeling of NBTI Stress and Recovery in RMG FinFETs Under Diverse DC-AC Experimental Conditions

A review of NBTI mechanisms and models

Suchergebnisse filtern