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Phonon transport in single-layer transition metal dichalcogenides: A first-principles study

Applied physics letters, 2014-09, Vol.105 (13)

2014

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Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems

IEEE electron device letters, 2016-08, Vol.37 (8), p.994-997

2016

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IEEE_Xplore

High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection

Nature nanotechnology, 2020-08, Vol.15 (8), p.675-682

2020

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Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films

IEEE electron device letters, 2018-08, Vol.39 (8), p.1207-1210

2018

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IEEE_Xplore

Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer

IEEE electron device letters, 2017-08, Vol.38 (8), p.1019-1022

2017

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IEEE_Xplore

Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide

IEEE electron device letters, 2019-06, Vol.40 (6), p.993-996

2019

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IEEE_Xplore

Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2

Journal of applied physics, 2016-09, Vol.120 (12)

2016

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High-yield production of mono- or few-layer transition metal dichalcogenide nanosheets by an electrochemical lithium ion intercalation-based exfoliation method

Nature protocols, 2022-02, Vol.17 (2), p.358-377

2022

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A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation

IEEE electron device letters, 2018-01, Vol.39 (1), p.15-18

2018

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IEEE_Xplore

Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack

2017 Symposium on VLSI Technology, 2017, p.T154-T155

2017

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Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

IEEE transactions on electron devices, 2016-09, Vol.63 (9), p.3501-3507

2016

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IEEE_Xplore

Performance Improvement of Hf0.5Zr0.5O2-Based Ferroelectric-Field-Effect Transistors With ZrO2 Seed Layers

IEEE electron device letters, 2019-05, Vol.40 (5), p.714-717

2019

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IEEE_Xplore

Why Is FE-HfO2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

IEEE electron device letters, 2016-09, Vol.37 (9), p.1123-1126

2016

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IEEE_Xplore

Reliability Study of Ferroelectric Al:HfO2 Thin Films for DRAM and NAND Applications

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4091-4098

2017

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IEEE_Xplore

Effect of Doping Concentration on Intrinsic Ferroelectric Properties of HfLaO-Based Ferroelectric Memory

IEEE electron device letters, 2024-03, Vol.45 (3), p.376-379

2024

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IEEE_Xplore

Metal-Oxide RRAM

Proceedings of the IEEE, 2012-06, Vol.100 (6), p.1951-1970

2012

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IEEE_Xplore

Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery

IEEE electron device letters, 2017-10, Vol.38 (10), p.1379-1382

2017

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IEEE_Xplore

Pressure-induced optical anisotropy of HfS2

Journal of applied physics, 2024-07, Vol.136 (3)

2024

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Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics

IEEE electron device letters, 2015-04, Vol.36 (4), p.294-296

2015

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IEEE_Xplore

Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode

IEEE electron device letters, 2019-11, Vol.40 (11), p.1744-1747

2019

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IEEE_Xplore

Two-Dimensional Van Der Waals Hafnium Disulfide and Zirconium Oxide-Based Micro-Interdigitated Electrodes Transistors

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1520-1526

2023

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IEEE_Xplore

Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application

IEEE electron device letters, 2018-05, Vol.39 (5), p.664-667

2018

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IEEE_Xplore

N -aryloxide-amidinate group 4 metal complexes

Dalton transactions : an international journal of inorganic chemistry, 2023-08, Vol.52 (33), p.11565-11570

2023

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Terminal and Super‐Basic Parent Imides of Hafnium

Angewandte Chemie International Edition, 2022-10, Vol.61 (43), p.e202209122-n/a

International ed. in English, 2022

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EPR investigation of point defects in HfB2 and their roles in supercapacitor device performances

Applied physics letters, 2022-04, Vol.120 (15)

2022

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Phonon transport in single-layer transition metal dichalcogenides: A first-principles study

Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems

High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection

Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films

Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer

Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide

Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2

High-yield production of mono- or few-layer transition metal dichalcogenide nanosheets by an electrochemical lithium ion intercalation-based exfoliation method

A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation

Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack

Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

Performance Improvement of Hf0.5Zr0.5O2-Based Ferroelectric-Field-Effect Transistors With ZrO2 Seed Layers

Why Is FE-HfO2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

Reliability Study of Ferroelectric Al:HfO2 Thin Films for DRAM and NAND Applications

Effect of Doping Concentration on Intrinsic Ferroelectric Properties of HfLaO-Based Ferroelectric Memory

Metal-Oxide RRAM

Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery

Pressure-induced optical anisotropy of HfS2

Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics

Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode

Two-Dimensional Van Der Waals Hafnium Disulfide and Zirconium Oxide-Based Micro-Interdigitated Electrodes Transistors

Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application

N -aryloxide-amidinate group 4 metal complexes

Terminal and Super‐Basic Parent Imides of Hafnium

EPR investigation of point defects in HfB2 and their roles in supercapacitor device performances

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