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Resistance and Threshold Switching Voltage Drift Behavior in Phase-Change Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a Micro-Thermal Stage
IEEE transactions on electron devices, 2011-03, Vol.58 (3), p.584-592
2011
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Integration of Nanoelectromechanical Relays With Silicon nMOS
IEEE transactions on electron devices, 2012-01, Vol.59 (1), p.255-258
2012
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Fabrication and Characterization of Nanoscale NiO Resistance Change Memory (RRAM) Cells With Confined Conduction Paths
IEEE transactions on electron devices, 2011-10, Vol.58 (10), p.3270-3275
2011
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hbox\hbox-Based RRAM Using Atomic Layer Deposition (ALD) With 1- \mu\hbox RESET Current
IEEE electron device letters, 2010-12, Vol.31 (12), p.1449-1451
2010
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NiO resistance change memory with a novel structure for 3D integration and improved confinement of conduction path
2009 Symposium on VLSI Technology, 2009, p.28-29
2009
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Low-power TiN/Al2O3/Pt resistive switching device with sub-20 μA switching current and gradual resistance modulation
Journal of applied physics, 2011-11, Vol.110 (9)
2011
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Metal-Oxide RRAM
Proceedings of the IEEE, 2012-06, Vol.100 (6), p.1951-1970
2012
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Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing
Nano letters, 2012-05, Vol.12 (5), p.2179-2186
2012
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Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory
Japanese Journal of Applied Physics, 2012-02, Vol.51 (2), p.02BD06-02BD06-5
2012
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Al2O3-Based RRAM Using Atomic Layer Deposition (ALD) With 1-μA RESET Current
IEEE electron device letters, 2010-12, Vol.31 (12), p.1449-1451
2010
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Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory
Japanese Journal of Applied Physics, 2012-02, Vol.51 (2S), p.2
2012
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Thermal disturbance and its impact on reliability of phase-change memory studied by the micro-thermal stage
2010 IEEE International Reliability Physics Symposium, 2010, p.99-103
2010
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hbox Al 2 hbox O 3 -Based RRAM Using Atomic Layer Deposition (ALD) With 1- mu hbox A RESET Current
IEEE electron device letters, 2010-12, Vol.31 (12), p.1449-1451
2010
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Low-power TiN/Al 2 O 3 /Pt resistive switching device with sub-20 μA switching current and gradual resistance modulation
Journal of applied physics, 2011-11, Vol.110 (9), p.094104-094104-5
2011
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Fabrication and characterization of emerging nanoscale memory
2009 IEEE International Symposium on Circuits and Systems (ISCAS), 2009, p.65-68
2009
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[Formula Omitted]-Based RRAM Using Atomic Layer Deposition (ALD) With 1-[Formula Omitted] RESET Current
IEEE electron device letters, 2010-12, Vol.31 (12), p.1449
2010
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Ultra-low power Al2O3-based RRAM with 1μA reset current
Proceedings of 2010 International Symposium on VLSI Technology, System and Application, 2010, p.136-137
2010
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Highly Manufacturable 7th Generation 3D NAND Flash Memory with COP structure and Double Stack Process
2021 Symposium on VLSI Technology, 2021, p.1-2
2021
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Integration of nanoelectromechanical (NEM) relays with silicon CMOS with functional CMOS-NEM circuit
2011 International Electron Devices Meeting, 2011, p.30.5.1-30.5.4
2011
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Crystallization properties and their drift dependence in phase-change memory studied with a micro-thermal stage
Journal of applied physics, 2011-12, Vol.110 (11), p.114520-114520-6
2011
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Metal―Oxide RRAM: Memristors: Devices, Models & Applications
Proceedings of the IEEE, 2012, Vol.100 (6), p.1951-1970
2012
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Process Improvements for 7th Generation 1Tb Quad-Level Cell 3D NAND Flash Memory in Mass Production
2023 IEEE International Memory Workshop (IMW), 2023, p.1-4
2023
Open Access
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Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM)
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, 2010, p.1055-1060
2010
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Recent Progress of Phase Change Memory (PCM) and Resistive Switching Random Access Memory (RRAM)
2011 3rd IEEE International Memory Workshop (IMW), 2011, p.1-5
2011
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Metal Oxide Resistive Switching Memory
Functional Metal Oxide Nanostructures, p.303-335
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