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Practical Approach to Programmable Analog Circuits With Memristors

IEEE transactions on circuits and systems. I, Regular papers, 2010-08, Vol.57 (8), p.1857-1864

2010

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Transient Investigation of Metal-oxide based, CMOS-compatible ECRAM

2021 IEEE International Reliability Physics Symposium (IRPS), 2021, p.1-7

2021

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High‐Speed Ionic Synaptic Memory Based on 2D Titanium Carbide MXene

Advanced functional materials, 2022-03, Vol.32 (12), p.2109970-n/a

2022

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Time Domain Analog Neuromorphic Engine Based on High-Density Non-Volatile Memory in Single-Poly CMOS

IEEE access, 2022, Vol.10, p.49154-49166

2022

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Recent progress in analog memory-based accelerators for deep learning

Journal of physics. D, Applied physics, 2018-06, Vol.51 (28), p.283001

2018

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A 1.2-GHz comparator with adaptable offset in 0.35-μm CMOS

IEEE transactions on circuits and systems. I, Regular papers, 2008-10, Vol.55 (9), p.2584-2594

2008

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Cryogenic characterization and modeling of a CMOS floating-gate device for quantum control hardware

Solid-state electronics, 2022-03, Vol.189, p.108190, Article 108190

2022

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Synapse‐Like Organic Thin Film Memristors

Advanced functional materials, 2018-05, Vol.28 (22), p.n/a

2018

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Coexistence of Interfacial and Filamentary Resistance Switching in Ti/SiO \textit /Au Resistive Memory Devices

IEEE transactions on electron devices, 2023-08, p.1-7

2023

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Full-Analog Implementation of Activation Function Based on Phase-Change Memory for Artificial Neural Networks

IEEE transactions on industrial electronics (1982), 2024-08, Vol.71 (8), p.1-9

2024

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A Low-Power Convolutional Neural Network Face Recognition Processor and a CIS Integrated With Always-on Face Detector

IEEE journal of solid-state circuits, 2018-01, Vol.53 (1), p.115-123

2018

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Energy Efficient Neuro‐Inspired Phase–Change Memory Based on Ge4Sb6Te7 as a Novel Epitaxial Nanocomposite

Advanced materials (Weinheim), 2023-07, Vol.35 (30), p.n/a

2023

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Performance Impacts of Analog ReRAM Non-ideality on Neuromorphic Computing

IEEE transactions on electron devices, 2019-03, Vol.66 (3), p.1289-1295

2019

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SCARLET: A Readout ASIC Bump-Bonded to SDD Array for Large Event Throughput

IEEE transactions on nuclear science, 2024-10, Vol.71 (10), p.2323-2333

2024

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Emerging Artificial Synaptic Devices for Neuromorphic Computing

Advanced materials technologies, 2019-04, Vol.4 (4), p.n/a

2019

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Embedded Analog Nonvolatile Memory With Bidirectional and Linear Programmability

IEEE transactions on circuits and systems. II, Express briefs, 2012-02, Vol.59 (2), p.88-92

2012

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An Accurate, Error-Tolerant, and Energy-Efficient Neural Network Inference Engine Based on SONOS Analog Memory

IEEE transactions on circuits and systems. I, Regular papers, 2022-04, Vol.69 (4), p.1480-1493

2022

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Multi-functionality in de-doped poly 3-methylthiophene memristor device

Synthetic metals, 2024-08, Vol.306, p.117648, Article 117648

2024

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A 47-nW Voice Activity Detector (VAD) Featuring a Short-Time CNN Feature Extractor and an RNN-Based Classifier With a Non-Volatile CAP-ROM

IEEE journal of solid-state circuits, 2023-11, Vol.58 (11), p.1-10

2023

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Improved Conductance Linearity and Conductance Ratio of 1T2R Synapse Device for Neuromorphic Systems

IEEE electron device letters, 2017-08, Vol.38 (8), p.1023-1026

2017

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Very high dynamic range and high sampling rate VME digitizing boards for physics experiments

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2853-2860

2005

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An Embedded Three-Bit-Per-Cell Two-Transistors and One-Ferroelectric-Capacitance Nonvolatile Memory

IEEE electron device letters, 2021-10, Vol.42 (10), p.1460-1463

2021

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CCCS: customized spice-level crossbar-array circuit simulator for in-memory computing

2020 IEEE/ACM International Conference On Computer Aided Design (ICCAD), 2020, p.1-8

2020

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A 17.5-fJ/bit Energy-Efficient Analog SRAM for Mixed-Signal Processing

IEEE transactions on very large scale integration (VLSI) systems, 2017-10, Vol.25 (10), p.2714-2723

2017

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Ferroelectric Hf0.5Zr0.5O2 for Analog Memory and In‐Memory Computing Applications Down to Deep Cryogenic Temperatures

Advanced electronic materials, 2024-07, Vol.10 (7), p.n/a

2024

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Practical Approach to Programmable Analog Circuits With Memristors

Transient Investigation of Metal-oxide based, CMOS-compatible ECRAM

High‐Speed Ionic Synaptic Memory Based on 2D Titanium Carbide MXene

Time Domain Analog Neuromorphic Engine Based on High-Density Non-Volatile Memory in Single-Poly CMOS

Recent progress in analog memory-based accelerators for deep learning

A 1.2-GHz comparator with adaptable offset in 0.35-μm CMOS

Cryogenic characterization and modeling of a CMOS floating-gate device for quantum control hardware

Synapse‐Like Organic Thin Film Memristors

Coexistence of Interfacial and Filamentary Resistance Switching in Ti/SiO \textit /Au Resistive Memory Devices

Full-Analog Implementation of Activation Function Based on Phase-Change Memory for Artificial Neural Networks

A Low-Power Convolutional Neural Network Face Recognition Processor and a CIS Integrated With Always-on Face Detector

Energy Efficient Neuro‐Inspired Phase–Change Memory Based on Ge4Sb6Te7 as a Novel Epitaxial Nanocomposite

Performance Impacts of Analog ReRAM Non-ideality on Neuromorphic Computing

SCARLET: A Readout ASIC Bump-Bonded to SDD Array for Large Event Throughput

Emerging Artificial Synaptic Devices for Neuromorphic Computing

Embedded Analog Nonvolatile Memory With Bidirectional and Linear Programmability

An Accurate, Error-Tolerant, and Energy-Efficient Neural Network Inference Engine Based on SONOS Analog Memory

Multi-functionality in de-doped poly 3-methylthiophene memristor device

A 47-nW Voice Activity Detector (VAD) Featuring a Short-Time CNN Feature Extractor and an RNN-Based Classifier With a Non-Volatile CAP-ROM

Improved Conductance Linearity and Conductance Ratio of 1T2R Synapse Device for Neuromorphic Systems

Very high dynamic range and high sampling rate VME digitizing boards for physics experiments

An Embedded Three-Bit-Per-Cell Two-Transistors and One-Ferroelectric-Capacitance Nonvolatile Memory

CCCS: customized spice-level crossbar-array circuit simulator for in-memory computing

A 17.5-fJ/bit Energy-Efficient Analog SRAM for Mixed-Signal Processing

Ferroelectric Hf0.5Zr0.5O2 for Analog Memory and In‐Memory Computing Applications Down to Deep Cryogenic Temperatures

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