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Bound exciton and donor-acceptor pair recombinations in ZnO

Physica Status Solidi (b), 2004-02, Vol.241 (2), p.231-260

2004

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ZnO: From basics towards applications

Physica Status Solidi (b), 2007-09, Vol.244 (9), p.3027-3073

Klingshirn, C.

2007

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Quantum effects on modulational amplification in ion-implanted semiconductor magnetoplasmas

Pramāṇa, 2023-03, Vol.97 (2), Article 58

2023

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Highly transparent and conducting Al-doped ZnO as a promising material for optoelectronic applications

Pramāṇa, 2021-06, Vol.95 (2), Article 87

2021

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Ion implantation into gallium nitride

Physics reports, 2001-09, Vol.351 (5), p.349-385

2001

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P-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO

Physica status solidi. A, Applications and materials science, 2005-05, Vol.202 (6), p.1060-1065

2005

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Optical Properties of the Nitrogen Acceptor in Epitaxial ZnO

Physica status solidi. B. Basic research, 2002-12, Vol.234 (3), p.R7-R9

2002

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Preparation and properties of ZnO and devices

Physica Status Solidi (b), 2007-05, Vol.244 (5), p.1439-1450

2007

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A study of magnetic and optical properties of Cu-doped ZnO

Physica Status Solidi (b), 2004-06, Vol.241 (7), p.1533-1536

2004

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Optical, electrical and magnetic properties of transparent, n-type conductive Zn0.90−x V0.10Alx O thin films elaborated from aerogel nanoparticles

Physica status solidi. A, Applications and materials science, 2007-10, Vol.204 (10), p.3266-3277

2007

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Structural changes in arsenic ion-implanted Hg1-x Cdx Te epitaxial layers

Physica status solidi. A, Applications and materials science, 2007-08, Vol.204 (8), p.2714-2720

2007

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Magnetism depending on carrier in (Zn,Co)O

Europhysics letters, 2007-04, Vol.78 (1), p.17001-17001 (4)

2007

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Thermal and electrical properties of high-quality freestanding GaN wafers with high carrier concentration

Physica status solidi. C, 2007-06, Vol.4 (7), p.2215-2218

2007

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Magnesium diffusion in wurtzite-type GaN crystal

Physica status solidi. C, 2003-12 (7), p.2240-2243

2003

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Mg-doped high-quality AlxGa1-xN (x=0-1) grown by high-temperature metal-organic vapor phase epitaxy

Physica status solidi. C, 2007-06, Vol.4 (7), p.2502-2505

2007

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Vapour growth of II-VI single crystals doped by transition metals for mid-infrared lasers

Physica status solidi. C, 2006-03, Vol.3 (4), p.1213-1216

2006

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Rare earth doped III-nitrides for optoelectronics

European physical journal. Applied physics, 2006-11, Vol.36 (2), p.91-103

2006

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Low temperature ultrasonic investigation of ZnSe crystals doped with Ni

Physica Status Solidi (b), 2005-03, Vol.242 (3), p.R30-R32

2005

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Ferromagnetism in $\chem{Li}$ co-doped $\chem{ZnO}$:$\chem{Cr}

Europhysics letters, 2003-12, Vol.64 (6), p.797-802

2003

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Phonon properties and doping of Zn1-x Mnx Se epilayers grown by molecular-beam epitaxy

Physica Status Solidi (b), 2006-03, Vol.243 (4), p.914-918

2006

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p-type InN and In-rich InGaN

Physica Status Solidi (b), 2007-06, Vol.244 (6), p.1820-1824

2007

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Practical issues in carrier-contrast imaging of GaN structures

Physica status solidi. C, 2007-06, Vol.4 (7), p.2576-2580

2007

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Strategies for Controlling the Conductivity of Wide-Band-Gap Semiconductors

Physica status solidi. B. Basic research, 2002-01, Vol.229 (1), p.221-228

Van de Walle, Chris G.

2002

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Stress and density of defects in Si-doped GaN

Physica status solidi. A, Applications and materials science, 2006-06, Vol.203 (8), p.1954-1961

2006

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Investigation of hydrogen implantation induced blistering in GaN

Physica status solidi. C, 2006-06, Vol.3 (6), p.1754-1757

2006

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Bound exciton and donor-acceptor pair recombinations in ZnO

ZnO: From basics towards applications

Quantum effects on modulational amplification in ion-implanted semiconductor magnetoplasmas

Highly transparent and conducting Al-doped ZnO as a promising material for optoelectronic applications

Ion implantation into gallium nitride

P-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO

Optical Properties of the Nitrogen Acceptor in Epitaxial ZnO

Preparation and properties of ZnO and devices

A study of magnetic and optical properties of Cu-doped ZnO

Optical, electrical and magnetic properties of transparent, n-type conductive Zn0.90−x V0.10Alx O thin films elaborated from aerogel nanoparticles

Structural changes in arsenic ion-implanted Hg1-x Cdx Te epitaxial layers

Magnetism depending on carrier in (Zn,Co)O

Thermal and electrical properties of high-quality freestanding GaN wafers with high carrier concentration

Magnesium diffusion in wurtzite-type GaN crystal

Mg-doped high-quality AlxGa1-xN (x=0-1) grown by high-temperature metal-organic vapor phase epitaxy

Vapour growth of II-VI single crystals doped by transition metals for mid-infrared lasers

Rare earth doped III-nitrides for optoelectronics

Low temperature ultrasonic investigation of ZnSe crystals doped with Ni

Ferromagnetism in $\chem{Li}$ co-doped $\chem{ZnO}$:$\chem{Cr}

Phonon properties and doping of Zn1-x Mnx Se epilayers grown by molecular-beam epitaxy

p-type InN and In-rich InGaN

Practical issues in carrier-contrast imaging of GaN structures

Strategies for Controlling the Conductivity of Wide-Band-Gap Semiconductors

Stress and density of defects in Si-doped GaN

Investigation of hydrogen implantation induced blistering in GaN

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