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Mid-infrared (3–8 μm) Ge1−ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties

Applied physics letters, 2019-05, Vol.114 (21)

2019

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Synthesis of High Sn Content Ge1-x-ySixSny (0.1 < y < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications

ACS applied materials & interfaces, 2023-10, Vol.15 (41), p.48382-48394

2023

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Fabrication of Ge:Ga Hyperdoped Materials and Devices Using CMOS-Compatible Ga and Ge Hydride Chemistries

ACS applied materials & interfaces, 2018-10, Vol.10 (43), p.37198-37206

2018

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Synthesis and Structural and Optical Properties of Ga(As1-xPx)Ge3 and (GaP)yGe5-2y Semiconductors Using Interface-Engineered Group IV Platforms

ACS applied materials & interfaces, 2017-10, Vol.9 (40), p.35105-35113

2017

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Synthesis of High Sn Content Ge 1– x – y Si x Sn y (0.1 < y < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications

ACS applied materials & interfaces, 2023-10, Vol.15 (41), p.48382-48394

2023

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Synthesis of High Sn Content Ge1–x–y Si x Sn y (0.1 < y < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications

ACS applied materials & interfaces, 2023-10, Vol.15 (41), p.48382-48394

2023

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Mid-infrared (3–8 μ m) Ge1− y Sn y alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties

Applied physics letters, 2019-05, Vol.114 (21)

2019

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Enhanced optical and electrical performance of Ge 1− x Sn x /Ge/Si(100) ( x = 0.062) semiconductor via inductively coupled H 2 plasma treatments

Semiconductor science and technology, 2019-04, Vol.34 (4), p.45014

2019

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Enhanced optical and electrical performance of Ge1−xSnx/Ge/Si(100) (x = 0.062) semiconductor via inductively coupled H2 plasma treatments

Semiconductor science and technology, 2019-03, Vol.34 (4)

2019

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Synthesis and Structural and Optical Properties of Ga(As 1– x P x )Ge 3 and (GaP) y Ge 5–2 y Semiconductors Using Interface-Engineered Group IV Platforms

ACS applied materials & interfaces, 2017-10, Vol.9 (40), p.35105-35113

2017

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Synthesis and Structural and Optical Properties of Ga(As1–x P x )Ge3 and (GaP) y Ge5–2y Semiconductors Using Interface-Engineered Group IV Platforms

ACS applied materials & interfaces, 2017-10, Vol.9 (40), p.35105-35113

2017

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Synthesis and Structural and Optical Properties of Ga(As 1-x P x )Ge 3 and (GaP) y Ge 5-2y Semiconductors Using Interface-Engineered Group IV Platforms

ACS applied materials & interfaces, 2017-10, Vol.9 (40), p.35105

2017

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Enhanced Performance Designs of Group-IV Light Emitting Diodes for Mid IR Photonic Applications

ECS transactions, 2015-09, Vol.69 (14), p.147-156

2015

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Enhanced Performance Designs of Group-IV Light Emitting Diodes for Mid IR Photonic Applications

Meeting abstracts (Electrochemical Society), 2015-07, Vol.MA2015-02 (33), p.1228-1228

2015

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Tuning the Electronic and Photonic Properties of Monolayer MoS2 via In Situ Rhenium Substitutional Doping

Advanced functional materials, 2018-04, Vol.28 (16), p.n/a

2018

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Amikacin Liposome Inhalation Suspension for Treatment-Refractory Lung Disease Caused by Mycobacterium avium Complex (CONVERT). A Prospective, Open-Label, Randomized Study

American journal of respiratory and critical care medicine, 2018-12, Vol.198 (12), p.1559-1569

2018

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Prolonged myelination in human neocortical evolution

Proceedings of the National Academy of Sciences - PNAS, 2012-10, Vol.109 (41), p.16480-16485

2012

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Lactate Limits T Cell Proliferation via the NAD(H) Redox State

Cell reports (Cambridge), 2020-12, Vol.33 (11), p.108500-108500, Article 108500

2020

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Neoadjuvant Nivolumab plus Chemotherapy in Resectable Lung Cancer

The New England journal of medicine, 2022-05, Vol.386 (21), p.1973-1985

2022

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18F-fluoride positron emission tomography for identification of ruptured and high-risk coronary atherosclerotic plaques: a prospective clinical trial

The Lancet (British edition), 2014-02, Vol.383 (9918), p.705-713

2014

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Sex hormone binding globulin and insulin resistance

Clinical endocrinology (Oxford), 2013-03, Vol.78 (3), p.321-329

2013

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Transcription elongation factors represent in vivo cancer dependencies in glioblastoma

Nature (London), 2017-07, Vol.547 (7663), p.355-359

2017

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Polypyrrole-coated electrodes for the delivery of charge and neurotrophins to cochlear neurons

Biomaterials, 2009-05, Vol.30 (13), p.2614-2624

2009

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Consensus recommendations for a dynamic susceptibility contrast MRI protocol for use in high-grade gliomas

Neuro-oncology (Charlottesville, Va.), 2020-09, Vol.22 (9), p.1262-1275

2020

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Transpapillary drainage has no added benefit on treatment outcomes in patients undergoing EUS-guided transmural drainage of pancreatic pseudocysts: a large multicenter study

Gastrointestinal endoscopy, 2016-04, Vol.83 (4), p.720-729

2016

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Mid-infrared (3–8 μm) Ge1−ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties

Synthesis of High Sn Content Ge1-x-ySixSny (0.1 < y < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications

Fabrication of Ge:Ga Hyperdoped Materials and Devices Using CMOS-Compatible Ga and Ge Hydride Chemistries

Synthesis and Structural and Optical Properties of Ga(As1-xPx)Ge3 and (GaP)yGe5-2y Semiconductors Using Interface-Engineered Group IV Platforms

Synthesis of High Sn Content Ge 1– x – y Si x Sn y (0.1 < y < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications

Synthesis of High Sn Content Ge1–x–y Si x Sn y (0.1 < y < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications

Mid-infrared (3–8 μ m) Ge1− y Sn y alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties

Enhanced optical and electrical performance of Ge 1− x Sn x /Ge/Si(100) ( x = 0.062) semiconductor via inductively coupled H 2 plasma treatments

Enhanced optical and electrical performance of Ge1−xSnx/Ge/Si(100) (x = 0.062) semiconductor via inductively coupled H2 plasma treatments

Synthesis and Structural and Optical Properties of Ga(As 1– x P x )Ge 3 and (GaP) y Ge 5–2 y Semiconductors Using Interface-Engineered Group IV Platforms

Synthesis and Structural and Optical Properties of Ga(As1–x P x )Ge3 and (GaP) y Ge5–2y Semiconductors Using Interface-Engineered Group IV Platforms

Synthesis and Structural and Optical Properties of Ga(As 1-x P x )Ge 3 and (GaP) y Ge 5-2y Semiconductors Using Interface-Engineered Group IV Platforms

Enhanced Performance Designs of Group-IV Light Emitting Diodes for Mid IR Photonic Applications

Enhanced Performance Designs of Group-IV Light Emitting Diodes for Mid IR Photonic Applications

Tuning the Electronic and Photonic Properties of Monolayer MoS2 via In Situ Rhenium Substitutional Doping

Amikacin Liposome Inhalation Suspension for Treatment-Refractory Lung Disease Caused by Mycobacterium avium Complex (CONVERT). A Prospective, Open-Label, Randomized Study

Prolonged myelination in human neocortical evolution

Lactate Limits T Cell Proliferation via the NAD(H) Redox State

Neoadjuvant Nivolumab plus Chemotherapy in Resectable Lung Cancer

18F-fluoride positron emission tomography for identification of ruptured and high-risk coronary atherosclerotic plaques: a prospective clinical trial

Sex hormone binding globulin and insulin resistance

Transcription elongation factors represent in vivo cancer dependencies in glioblastoma

Polypyrrole-coated electrodes for the delivery of charge and neurotrophins to cochlear neurons

Consensus recommendations for a dynamic susceptibility contrast MRI protocol for use in high-grade gliomas

Transpapillary drainage has no added benefit on treatment outcomes in patients undergoing EUS-guided transmural drainage of pancreatic pseudocysts: a large multicenter study

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