UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 230

Sortiert nach

Trapping effects and microwave power performance in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2001-03, Vol.48 (3), p.465-471

2001

Volltextzugriff (PDF)

Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

Journal of crystal growth, 2002-07, Vol.242 (1), p.55-69

2002

Volltextzugriff (PDF)

Resistivity control in unintentionally doped GaN films grown by MOCVD

Journal of crystal growth, 2004-01, Vol.260 (1), p.54-62

2004

Volltextzugriff (PDF)

Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy

Applied physics letters, 2001-11, Vol.79 (21), p.3527-3529

2001

Volltextzugriff (PDF)

Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors

Applied physics letters, 1999-12, Vol.75 (25), p.4016-4018

1999

Volltextzugriff (PDF)

The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation

Applied surface science, 1998-04, Vol.126 (1), p.69-82

1998

Volltextzugriff (PDF)

Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

Applied physics letters, 2003-08, Vol.83 (8), p.1650-1652

2003

Volltextzugriff (PDF)

Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors

Journal of applied physics, 2000-09, Vol.88 (5), p.2843-2852

2000

Volltextzugriff (PDF)

Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors

Electronics letters, 2001-05, Vol.37 (10), p.661-662

2001

Volltextzugriff (PDF)

Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition

Physical review. B, Condensed matter, 2002-02, Vol.65 (8), Article 085312

2002

Volltextzugriff (PDF)

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy

Applied physics letters, 2001-10, Vol.79 (17), p.2740-2742

2001

Volltextzugriff (PDF)

Influence of AlN nucleation layer temperature on GaN electronic properties grown on SiC

Applied physics letters, 2002-06, Vol.80 (23), p.4372-4374

2002

Volltextzugriff (PDF)

The growth and properties of Al and AlN films on GaN(0001)–(1×1)

Journal of applied physics, 1996-01, Vol.79 (1), p.110-119

1996

Volltextzugriff (PDF)

GaN decomposition in H2 and N2 at MOVPE temperatures and pressures

Journal of crystal growth, 2001-03, Vol.223 (4), p.466-483

2001

Volltextzugriff (PDF)

Deformation potential carrier-phonon scattering in semiconducting carbon nanotube transistors

Applied physics letters, 2007-02, Vol.90 (6), p.062110-062110-3

2007

Volltextzugriff (PDF)

Hot optical phonon decay in carbon nanotubes

Applied physics letters, 2008-09, Vol.93 (9), p.093110-093110-3

2008

Volltextzugriff (PDF)

The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys

Journal of electronic materials, 2000-01, Vol.29 (1), p.21-26

2000

Volltextzugriff (PDF)

Persistent photoconductivity in n-type GaN

Applied physics letters, 1997-08, Vol.71 (8), p.1092-1094

1997

Volltextzugriff (PDF)

Advances in Pulsed-Laser-Deposited AlN Thin Films for High-Temperature Capping, Device Passivation, and Piezoelectric-Based RF MEMS/NEMS Resonator Applications

Journal of electronic materials, 2006-04, Vol.35 (4), p.777-794

2006

Volltextzugriff (PDF)

Aluminum, magnesium, and gold contacts to contamination free n-GaN surfaces

Journal of applied physics, 2001-01, Vol.89 (1), p.425-429

2001

Volltextzugriff (PDF)

Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures

Microelectronic engineering, 2002-08, Vol.63 (1), p.193-197

2002

Volltextzugriff (PDF)

HREELS of H/GaN(0001): evidence for Ga termination

Surface science, 1999-06, Vol.430 (1), p.80-88

1999

Volltextzugriff (PDF)

High-field transport studies of gan

Physica. B, Condensed matter, 2002-03, Vol.314 (1), p.39-41

2002

Volltextzugriff (PDF)

The impact of nitridation and nucleation layer process conditions on morphology and electron transport in GaN epitaxial films

Journal of electronic materials, 1999-03, Vol.28 (3), p.301-307

1999

Volltextzugriff (PDF)

Properties of Si-doped GaN films grown using multiple AlN interlayers

Applied physics letters, 1999-11, Vol.75 (20), p.3141-3143

1999

Volltextzugriff (PDF)

1 – 25 von 230

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(149)
Mit Volltextzugriff
(169)

Publikationsform

Sprache

Englisch
(230)
Japanisch
(43)

Erscheinungsjahr

n.n

Thema

Science & Technology
(116)
Physical Sciences
(82)
Physics
(80)
Technology
(61)
Physics, Applied
(57)
Materials Science
(46)
Materials Science, Multidisciplinary
(38)
Engineering
(37)
Physics, Condensed Matter
(28)
Engineering, Electrical & Electronic
(27)
Exact Sciences And Technology
(24)
Life Sciences & Biomedicine
(23)
Engineering Education
(18)
Animals
(16)
Humans
(15)
Chemistry
(14)
Condensed Matter: Electronic Structure, Electrical, Magnetic, And Optical Properties
(13)
Gan
(11)
Social Sciences
(11)
Condensed Matter: Structure, Mechanical And Thermal Properties
(9)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Trapping effects and microwave power performance in AlGaN/GaN HEMTs

Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

Resistivity control in unintentionally doped GaN films grown by MOCVD

Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy

Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors

The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation

Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors

Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors

Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy

Influence of AlN nucleation layer temperature on GaN electronic properties grown on SiC

The growth and properties of Al and AlN films on GaN(0001)–(1×1)

GaN decomposition in H2 and N2 at MOVPE temperatures and pressures

Deformation potential carrier-phonon scattering in semiconducting carbon nanotube transistors

Hot optical phonon decay in carbon nanotubes

The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys

Persistent photoconductivity in n-type GaN

Advances in Pulsed-Laser-Deposited AlN Thin Films for High-Temperature Capping, Device Passivation, and Piezoelectric-Based RF MEMS/NEMS Resonator Applications

Aluminum, magnesium, and gold contacts to contamination free n-GaN surfaces

Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures

HREELS of H/GaN(0001): evidence for Ga termination

High-field transport studies of gan

The impact of nitridation and nucleation layer process conditions on morphology and electron transport in GaN epitaxial films

Properties of Si-doped GaN films grown using multiple AlN interlayers

Suchergebnisse filtern