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Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices

Applied physics letters, 2024-08, Vol.125 (7)

2024

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Selective area isolation of β-Ga2O3 using multiple energy nitrogen ion implantation

Applied physics letters, 2018-10, Vol.113 (17)

2018

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Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling

Applied physics letters, 2022-04, Vol.120 (16)

2022

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AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)

IEEE transactions on electron devices, 2010-06, Vol.57 (6), p.1208-1216

2010

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SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes

Applied physics letters, 2022-03, Vol.120 (11)

2022

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Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

IEEE electron device letters, 2012-03, Vol.33 (3), p.357-359

2012

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High-voltage normally OFF GaN power transistors on SiC and Si substrates

MRS bulletin, 2015-05, Vol.40 (5), p.418-424

2015

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Refractory metal-based ohmic contacts on β-Ga2O3 using TiW

APL materials, 2022-07, Vol.10 (7), p.071108-071108-7

2022

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Polarization‐Engineered n+GaN/InGaN/AlGaN/GaN Normally‐Off MOS HEMTs

Physica status solidi. A, Applications and materials science, 2017-11, Vol.214 (11), p.n/a

2017

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High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1687-1691

2015

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Gallium nitride MIS-HEMT using atomic layer deposited Al2O3 as gate dielectric

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2013-01, Vol.31 (1)

2013

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Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric

Applied physics letters, 2023-09, Vol.123 (10)

2023

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Experimental Investigation of GaN-on-AlN/SiC Transistors With Regard to Monolithic Integration

IEEE transactions on power electronics, 2024-10, Vol.39 (10), p.12615-12624

2024

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Investigation of atomic layer deposition methods of Al2O3 on n-GaN

Journal of applied physics, 2024-02, Vol.135 (8)

2024

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Threshold voltage shift induced by intrinsic stress in gate metal of AlGaN/GaN HFET

Semiconductor science and technology, 2021-05, Vol.36 (5), p.55018

2021

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Local 2DEG Density Control in Heterostructures of Piezoelectric Materials and Its Application in GaN HEMT Fabrication Technology

IEEE transactions on electron devices, 2018-08, Vol.65 (8), p.3176-3184

2018

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Highly Robust GaN Power Amplifier at Millimeter-Wave Frequencies Using Sputtered Iridium Gate MMIC Technology

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6244-6249

2023

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Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2427-2429

2011

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GaN-Based Multichip Half-Bridge Power Module Integrated on High-Voltage AlN Ceramic Substrate

IEEE transactions on power electronics, 2022-10, Vol.37 (10), p.11896-11910

2022

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Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3354-3359

2008

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Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps‐Induced Drain Lag

Physica status solidi. A, Applications and materials science, 2024-04

2024

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Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices

Microelectronics and reliability, 2020-11, Vol.114, p.113951, Article 113951

2020

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Electroluminescence characterization of AlGaN/GaN HEMTs

Physica status solidi. C, 2009-06, Vol.6 (6), p.1382-1385

2009

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AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low RON × A

IEEE transactions on electron devices, 2010-11, Vol.57 (11), p.3050-3058

2010

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(Invited) Technological Approaches Towards High Voltage, Fast Switching GaN Power Transistors

ECS transactions, 2013, Vol.52 (1), p.979-989

2013

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Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices

Selective area isolation of β-Ga2O3 using multiple energy nitrogen ion implantation

Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling

AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)

SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes

Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

High-voltage normally OFF GaN power transistors on SiC and Si substrates

Refractory metal-based ohmic contacts on β-Ga2O3 using TiW

Polarization‐Engineered n+GaN/InGaN/AlGaN/GaN Normally‐Off MOS HEMTs

High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

Gallium nitride MIS-HEMT using atomic layer deposited Al2O3 as gate dielectric

Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric

Experimental Investigation of GaN-on-AlN/SiC Transistors With Regard to Monolithic Integration

Investigation of atomic layer deposition methods of Al2O3 on n-GaN

Threshold voltage shift induced by intrinsic stress in gate metal of AlGaN/GaN HFET

Local 2DEG Density Control in Heterostructures of Piezoelectric Materials and Its Application in GaN HEMT Fabrication Technology

Highly Robust GaN Power Amplifier at Millimeter-Wave Frequencies Using Sputtered Iridium Gate MMIC Technology

Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs

GaN-Based Multichip Half-Bridge Power Module Integrated on High-Voltage AlN Ceramic Substrate

Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps‐Induced Drain Lag

Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices

Electroluminescence characterization of AlGaN/GaN HEMTs

AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low RON × A

(Invited) Technological Approaches Towards High Voltage, Fast Switching GaN Power Transistors

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