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Radiation Damage on Silicon Photomultipliers from Ionizing and Non-Ionizing Radiation of Low-Earth Orbit Operations

Sensors (Basel, Switzerland), 2024-08, Vol.24 (15), p.4990

2024

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Development of a Charge-Multiplication CMOS Image Sensor Based on Capacitive Trench for Low-Light-Level Imaging

Sensors (Basel, Switzerland), 2023-11, Vol.23 (23), p.9518

2023

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Simulation of Single Particle Displacement Damage in Silicon-Part II: Generation and Long-Time Relaxation of Damage Structure

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.141-148

2017

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Simulation of Single Particle Displacement Damage in Silicon - Part I: Global Approach and Primary Interaction Simulation

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.133-140

2017

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Evaluation of Microlenses, Color Filters, and Polarizing Filters in CIS for Space Applications

Sensors (Basel, Switzerland), 2023-06, Vol.23 (13), p.5884

2023

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CMOS Image Sensors and Plasma Processes: How PMD Nitride Charging Acts on the Dark Current

Sensors (Basel, Switzerland), 2019-12, Vol.19 (24), p.5534

2019

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Simulation of Single-Particle Displacement Damage in Silicon—Part III: First Principle Characterization of Defect Properties

IEEE transactions on nuclear science, 2018-02, Vol.65 (2), p.724-731

2018

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In-Pixel Source Follower Transistor RTS Noise Behavior Under Ionizing Radiation in CMOS Image Sensors

IEEE transactions on electron devices, 2012-06, Vol.59 (6), p.1686-1692

2012

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Radiation Hardening of Digital Color CMOS Camera-on-a-Chip Building Blocks for Multi-MGy Total Ionizing Dose Environments

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.45-53

2017

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Multi-MGy Radiation Hard CMOS Image Sensor: Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.2956-2964

2015

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Pixel Level Characterization of Pinned Photodiode and Transfer Gate Physical Parameters in CMOS Image Sensors

IEEE journal of the Electron Devices Society, 2014-07, Vol.2 (4), p.65-76

2014

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Random Telegraph Noises in CMOS Image Sensors Caused by Variable Gate-Induced Sense Node Leakage Due to X-Ray Irradiation

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.227-238

2019

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Exploration of Pinned Photodiode Radiation Hardening Solutions Through TCAD Simulations

IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3411-3416

2019

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Comparison of Dark Current Random Telegraph Signals in Silicon and InSb-Based Photodetector Pixel Arrays

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4940-4946

2020

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Comparison of Pinning Voltage Estimation Methods in Pinned Photodiode CMOS Image Sensors

IEEE journal of the Electron Devices Society, 2016-03, Vol.4 (2), p.99-108

2016

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Enhanced Radiation-Induced Narrow Channel Effects in Commercial }~\mu m Bulk Technology

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2807-2815

2011

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Pinned Photodiode CMOS Image Sensor TCAD Simulation: In-Depth Analysis of in-Pixel Pinning Voltage Measurement for a Diagnostic Tool

IEEE transactions on electron devices, 2017-02, Vol.64 (2), p.455-462

2017

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Estimating Low-Temperature RTS Rate in MCT FPA Through High-Temperature Noise Measurements

Journal of electronic materials, 2024-10, Vol.53 (10), p.5813-5819

2024

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Ultra-High Total Ionizing Dose Effects on MOSFETs for Analog Applications

IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.697-706

2021

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Dark Current Sharing and Cancellation Mechanisms in CMOS Image Sensors Analyzed by TCAD Simulations

IEEE transactions on electron devices, 2017-12, Vol.64 (12), p.4985-4991

2017

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Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors

IEEE electron device letters, 2013-07, Vol.34 (7), p.900-902

2013

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Dark Current Random Telegraph Signal in Proton-Irradiated Single InGaAs Photodiodes

IEEE transactions on nuclear science, 2024-08, Vol.71 (8), p.1783-1788

2024

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Impact of Irradiation Temperature, Doping, and Proton Energy on InGaAs Photodiodes

IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.719-727

2024

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Special NSREC 2023 Issue of the IEEE Transactions on Nuclear Science Editor Comments

IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.367-367

2024

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Hours-Long Transient Leakage Current in MOS Structures Induced by High Total-Ionizing-Dose

IEEE transactions on nuclear science, 2022-07, Vol.69 (7), p.1428-1436

2022

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Radiation Damage on Silicon Photomultipliers from Ionizing and Non-Ionizing Radiation of Low-Earth Orbit Operations

Development of a Charge-Multiplication CMOS Image Sensor Based on Capacitive Trench for Low-Light-Level Imaging

Simulation of Single Particle Displacement Damage in Silicon-Part II: Generation and Long-Time Relaxation of Damage Structure

Simulation of Single Particle Displacement Damage in Silicon - Part I: Global Approach and Primary Interaction Simulation

Evaluation of Microlenses, Color Filters, and Polarizing Filters in CIS for Space Applications

CMOS Image Sensors and Plasma Processes: How PMD Nitride Charging Acts on the Dark Current

Simulation of Single-Particle Displacement Damage in Silicon—Part III: First Principle Characterization of Defect Properties

In-Pixel Source Follower Transistor RTS Noise Behavior Under Ionizing Radiation in CMOS Image Sensors

Radiation Hardening of Digital Color CMOS Camera-on-a-Chip Building Blocks for Multi-MGy Total Ionizing Dose Environments

Multi-MGy Radiation Hard CMOS Image Sensor: Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests

Pixel Level Characterization of Pinned Photodiode and Transfer Gate Physical Parameters in CMOS Image Sensors

Random Telegraph Noises in CMOS Image Sensors Caused by Variable Gate-Induced Sense Node Leakage Due to X-Ray Irradiation

Exploration of Pinned Photodiode Radiation Hardening Solutions Through TCAD Simulations

Comparison of Dark Current Random Telegraph Signals in Silicon and InSb-Based Photodetector Pixel Arrays

Comparison of Pinning Voltage Estimation Methods in Pinned Photodiode CMOS Image Sensors

Enhanced Radiation-Induced Narrow Channel Effects in Commercial }~\mu m Bulk Technology

Pinned Photodiode CMOS Image Sensor TCAD Simulation: In-Depth Analysis of in-Pixel Pinning Voltage Measurement for a Diagnostic Tool

Estimating Low-Temperature RTS Rate in MCT FPA Through High-Temperature Noise Measurements

Ultra-High Total Ionizing Dose Effects on MOSFETs for Analog Applications

Dark Current Sharing and Cancellation Mechanisms in CMOS Image Sensors Analyzed by TCAD Simulations

Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors

Dark Current Random Telegraph Signal in Proton-Irradiated Single InGaAs Photodiodes

Impact of Irradiation Temperature, Doping, and Proton Energy on InGaAs Photodiodes

Special NSREC 2023 Issue of the IEEE Transactions on Nuclear Science Editor Comments

Hours-Long Transient Leakage Current in MOS Structures Induced by High Total-Ionizing-Dose

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