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InAs and InAsSb LEDs with built-in cavities

Semiconductor science and technology, 2003-04, Vol.18 (4), p.269-272

2003

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Room temperature InAs photodiode–InGaAs LED pairs for methane detection in the mid-IR

Sensors and actuators. B, Chemical, 1998-08, Vol.51 (1), p.233-237

1998

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6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm

Applied physics letters, 2002-08, Vol.81 (7), p.1166-1167

2002

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Towards efficient mid-IR LED operation: optical pumping, extraction or injection of carriers?

Journal of modern optics, 2002-04, Vol.49 (5-6), p.743-756

2002

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Low-threshold long-wave lasers ( lambda =3.0-3.6 mu m) based on III-V alloys

Semiconductor science and technology, 1993-08, Vol.8 (8), p.1575-1580

1993

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Optically pumped “immersion-lens” infrared light emitting diodes based on narrow-gap III–V semiconductors

Semiconductors (Woodbury, N.Y.), 2002-07, Vol.36 (7), p.828-831

2002

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Radiation recombination in InAsSb/InAsSbP double heterostructures

Semiconductor science and technology, 1995-02, Vol.10 (2), p.151-156

1995

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Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics

Semiconductors (Woodbury, N.Y.), 2002-08, Vol.36 (8), p.944-949

2002

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Two-wavelength emission from a GaInPAsSb/InAs structure with a broken-gap isotype heterojunction and a p-n junction in the substrate

Technical physics letters, 2002-12, Vol.28 (12), p.1001-1003

2002

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Negative luminescence in p-InAsSbP/n-InAs diodes

Semiconductors (Woodbury, N.Y.), 2001-03, Vol.35 (3), p.321-324

2001

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Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3–5 µm

Semiconductors (Woodbury, N.Y.), 1999-08, Vol.33 (8), p.920-923

1999

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High power InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.3 µm)

Semiconductors (Woodbury, N.Y.), 2001-10, Vol.35 (10), p.1208-1212

2001

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Optically pumped mid-infrared InGaAs(Sb) LEDs

Semiconductors (Woodbury, N.Y.), 2001-03, Vol.35 (3), p.357-359

2001

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Midwave (3–4 μm) InAsSbP/InGaAsSb infrared diode lasers as a source for gas sensors

Infrared physics & technology, 1996-02, Vol.37 (1), p.83-86

1996

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Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3–4.3 μm spectral range

Sensors and actuators. B, Chemical, 2003-06, Vol.91 (1), p.256-261

2003

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InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.0–3.3 µm) for diode laser spectroscopy

Semiconductors (Woodbury, N.Y.), 2000-01, Vol.34 (7), p.848-852

2000

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Spectral characteristics of lasers based on InGaAsSb/InAsSbP double heterostructures (λ=3.0–3.6 µm)

Semiconductors (Woodbury, N.Y.), 2000-01, Vol.34 (4), p.488-492

2000

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Tunable mid-IR diode lasers based on InGaAsSb/InAsSbP DH

Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy, 1996-07, Vol.52 (8), p.857-862

1996

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InAs-based laser double heterostructures with p-n junction in the active region

Optical materials, 1996-07, Vol.6 (1), p.111-116

1996

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Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers

Semiconductors (Woodbury, N.Y.), 1999-06, Vol.33 (6), p.700-703

1999

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Emissive characteristics of mesa-stripe lasers (λ=3.0–3.6 μm) made from InGaAsSb/InAsSbP double heterostructures

Technical physics letters, 1998-06, Vol.24 (6), p.472-474

1998

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InAs and InAsSb LEDs with built-in cavities

Semiconductor science and technology, 2003, Vol.18 (4), p.269-272

2003

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Fiber-optic detector using a mid-infrared diode laser and an acoustooptic modulator

Technical physics letters, 1997-10, Vol.23 (10), p.781-782

1997

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Mesa stripe for the 3–3.6 μm range lasers utilizing gadolinium-doped InAsSbP/InGaAsSb double heterostructures

Technical physics letters, 1997-01, Vol.23 (1), p.41-42

1997

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Spontaneous and stimulated emission from InAsSbP/InAs heterostructures

Physica status solidi. A, Applied research, 1989-09, Vol.115 (1), p.K117-K120

1989

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InAs and InAsSb LEDs with built-in cavities

Room temperature InAs photodiode–InGaAs LED pairs for methane detection in the mid-IR

6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm

Towards efficient mid-IR LED operation: optical pumping, extraction or injection of carriers?

Low-threshold long-wave lasers ( lambda =3.0-3.6 mu m) based on III-V alloys

Optically pumped “immersion-lens” infrared light emitting diodes based on narrow-gap III–V semiconductors

Radiation recombination in InAsSb/InAsSbP double heterostructures

Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics

Two-wavelength emission from a GaInPAsSb/InAs structure with a broken-gap isotype heterojunction and a p-n junction in the substrate

Negative luminescence in p-InAsSbP/n-InAs diodes

Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3–5 µm

High power InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.3 µm)

Optically pumped mid-infrared InGaAs(Sb) LEDs

Midwave (3–4 μm) InAsSbP/InGaAsSb infrared diode lasers as a source for gas sensors

Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3–4.3 μm spectral range

InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.0–3.3 µm) for diode laser spectroscopy

Spectral characteristics of lasers based on InGaAsSb/InAsSbP double heterostructures (λ=3.0–3.6 µm)

Tunable mid-IR diode lasers based on InGaAsSb/InAsSbP DH

InAs-based laser double heterostructures with p-n junction in the active region

Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers

Emissive characteristics of mesa-stripe lasers (λ=3.0–3.6 μm) made from InGaAsSb/InAsSbP double heterostructures

InAs and InAsSb LEDs with built-in cavities

Fiber-optic detector using a mid-infrared diode laser and an acoustooptic modulator

Mesa stripe for the 3–3.6 μm range lasers utilizing gadolinium-doped InAsSbP/InGaAsSb double heterostructures

Spontaneous and stimulated emission from InAsSbP/InAs heterostructures

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