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GaSbBi/GaSb quantum well laser diodes

Applied physics letters, 2017-05, Vol.110 (22)

2017

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Growth of InAs(Bi)/GaAs Quantum Dots under a Bismuth Surfactant at High and Low Temperature

Journal of nanomaterials, 2022, Vol.2022 (1)

2022

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Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi–Cu–Se, Bi–Ag–Se, and Sb–Cu–Te alloys

Journal of alloys and compounds, 2020-05, Vol.824, p.153880, Article 153880

2020

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Density control of GaN nanowires at the wafer scale using self-assembled SiN x patches on sputtered TiN(111)

Nanotechnology, 2023-09, Vol.34 (37), p.375602

2023

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Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires

Nanotechnology, 2023-11, Vol.34 (46), p.465605

2023

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Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1−xBix GaAs quantum wells

Nanotechnology, 2016-07, Vol.27 (32)

2016

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Electronic Structural and Optical Properties of Multilayer Blue Phosphorus: A First-Principle Study

Journal of nanomaterials, 2019-01, Vol.2019 (2019), p.1-8

2019

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Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions

Journal of physics. D, Applied physics, 2019-09, Vol.52 (38), p.385101

2019

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Macro- and micro-strain in GaN nanowires on Si(111)

Nanotechnology, 2011-07, Vol.22 (29), p.295714-295714

2011

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In situ transmission electron microscopy of solid phase epitaxy of Ge on Fe3Si

Semiconductor science and technology, 2019-11, Vol.34 (12)

2019

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Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers

Journal of applied physics, 2019-08, Vol.126 (8)

2019

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Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al, Ga)As quantum wells

Applied physics letters, 2017-05, Vol.110 (20)

2017

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Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

Nanotechnology, 2010-07, Vol.21 (30), p.305201-305201

2010

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Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1−xBix epilayers

Journal of applied physics, 2015-05, Vol.117 (18)

2015

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Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy

Nanotechnology, 2024-06, Vol.35 (26), p.265702

2024

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Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission

Nanotechnology, 2013-05, Vol.24 (17), p.175303-175303

2013

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Growth of Fe3Si/Ge/Fe3Si trilayers on GaAs(001) using solid-phase epitaxy

Applied physics letters, 2017-03, Vol.110 (10)

2017

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Effect of Photoillumination on Gold-Nanoparticle-Assisted Chemical Etching of Silicon

Journal of nanomaterials, 2018-01, Vol.2018 (2018), p.1-5

2018

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Clustering in a precipitate-free GeMn magnetic semiconductor

Physical review letters, 2006-12, Vol.97 (23), p.237202-237202, Article 237202

2006

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Physical origin of the incubation time of self-induced GaN nanowires

Applied physics letters, 2011-07, Vol.99 (3), p.033102-033102-3

2011

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Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

Nature (London), 2000-08, Vol.406 (6798), p.865-868

2000

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Lattice matched Volmer-Weber growth of Fe3Si on GaAs(001)-the influence of the growth rate

Semiconductor science and technology, 2019-10, Vol.34 (12)

2019

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Molecular-beam epitaxy of GaInSbBi alloys

Journal of applied physics, 2019-10, Vol.126 (15)

2019

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X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films

Physical review. B, Condensed matter and materials physics, 2005-07, Vol.72 (4), p.045423.1-045423.12, Article 045423

2005

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Manifestation of axiotaxy induced by the (10.4) plane in high-temperature-grown bismuth telluride films on InP(111)

CrystEngComm, 2018-01, Vol.20 (7), p.983-989

2018

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GaSbBi/GaSb quantum well laser diodes

Growth of InAs(Bi)/GaAs Quantum Dots under a Bismuth Surfactant at High and Low Temperature

Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi–Cu–Se, Bi–Ag–Se, and Sb–Cu–Te alloys

Density control of GaN nanowires at the wafer scale using self-assembled SiN x patches on sputtered TiN(111)

Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires

Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1−xBix GaAs quantum wells

Electronic Structural and Optical Properties of Multilayer Blue Phosphorus: A First-Principle Study

Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions

Macro- and micro-strain in GaN nanowires on Si(111)

In situ transmission electron microscopy of solid phase epitaxy of Ge on Fe3Si

Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers

Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al, Ga)As quantum wells

Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1−xBix epilayers

Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy

Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission

Growth of Fe3Si/Ge/Fe3Si trilayers on GaAs(001) using solid-phase epitaxy

Effect of Photoillumination on Gold-Nanoparticle-Assisted Chemical Etching of Silicon

Clustering in a precipitate-free GeMn magnetic semiconductor

Physical origin of the incubation time of self-induced GaN nanowires

Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

Lattice matched Volmer-Weber growth of Fe3Si on GaAs(001)-the influence of the growth rate

Molecular-beam epitaxy of GaInSbBi alloys

X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films

Manifestation of axiotaxy induced by the (10.4) plane in high-temperature-grown bismuth telluride films on InP(111)

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