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Atomic-displacement threshold energies and defect generation in irradiated β-Ga2O3: A first-principles investigation

Journal of applied physics, 2023-01, Vol.133 (1)

2023

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Impact of Surface Recombination on Single-Event Charge Collection in an SOI Technology

IEEE transactions on nuclear science, 2021-03, Vol.68 (3), p.305-311

2021

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Understanding the Average Electron-Hole Pair-Creation Energy in Silicon and Germanium Based on Full-Band Monte Carlo Simulations

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.444-451

2019

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IEEE_Xplore

Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs

IEEE transactions on electron devices, 2014-05, Vol.61 (5), p.1316-1320

2014

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IEEE_Xplore

Depletion-All-Around Operation of the SOI Four-Gate Transistor

IEEE transactions on electron devices, 2007-02, Vol.54 (2), p.323-331

2007

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IEEE_Xplore

Defect dynamics in the presence of excess energetic carriers and high electric fields in wide-gap semiconductors

Journal of applied physics, 2024-05, Vol.135 (19)

2024

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The Impact of Delta-Rays on Single-Event Upsets in Highly Scaled SOI SRAMs

IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3169-3175

2010

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IEEE_Xplore

Radiation Effects in AlGaN/GaN HEMTs

IEEE transactions on nuclear science, 2022-05, Vol.69 (5), p.1-1

2022

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IEEE_Xplore

Effects of Bias on the Irradiation and Annealing Responses of 4H-SiC MOS Devices

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2925-2929

2011

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IEEE_Xplore

Two-Photon Absorption Induced Single-Event Effects: Correlation Between Experiment and Simulation

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.2867-2873

2015

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IEEE_Xplore

Single-Event Charge Collection and Upset in 40-nm Dual- and Triple-Well Bulk CMOS SRAMs

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2761-2767

2011

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IEEE_Xplore

Failure Estimates for SiC Power MOSFETs in Space Electronics

Aerospace, 2018-09, Vol.5 (3), p.67

2018

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Single-Event Burnout Mechanisms in SiC Power MOSFETs

IEEE transactions on nuclear science, 2018-08, Vol.65 (8), p.1951-1955

2018

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IEEE_Xplore

Total ionizing dose effects in shallow trench isolation oxides

Microelectronics and reliability, 2008-07, Vol.48 (7), p.1000-1007

2008

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Low-Frequency Noise Due to Iron Impurity Centers in GaN-Based HEMTs

IEEE transactions on electron devices, 2024-02, Vol.71 (2), p.1-7

2024

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IEEE_Xplore

Influence of LDD Spacers and H+ Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.164-174

2018

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IEEE_Xplore

Bias Effects on Total Dose-Induced Degradation of Bipolar Linear Microcircuits for Switched Dose-Rate Irradiation

IEEE transactions on nuclear science, 2010-08, Vol.57 (4), p.1950-1957

2010

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IEEE_Xplore

Effects of Interface Traps and Hydrogen on the Low-Frequency Noise of Irradiated MOS Devices

IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.555-568

2024

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IEEE_Xplore

Experimental Characterization of Radiation-Induced Charge Sharing

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4159-4165

2013

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IEEE_Xplore

The foundations of Shockley's equation for the average electron–hole-pair creation energy in semiconductors

Applied physics letters, 2022-07, Vol.121 (4)

2022

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Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices

Nano letters, 2016-11, Vol.16 (11), p.6870-6878

2016

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Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses

IEEE transactions on nuclear science, 2018-08, Vol.65 (8), p.1482-1487

2018

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IEEE_Xplore

Charge Transport in Vertical GaN Schottky Barrier Diodes: A Refined Physical Model for Conductive Dislocations

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.841-846

2020

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IEEE_Xplore

Radiation-Induced Transient Response Mechanisms in Photonic Waveguides

IEEE transactions on nuclear science, 2022-03, Vol.69 (3), p.546-557

2022

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IEEE_Xplore

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.687-696

2021

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IEEE_Xplore

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Atomic-displacement threshold energies and defect generation in irradiated β-Ga2O3: A first-principles investigation

Impact of Surface Recombination on Single-Event Charge Collection in an SOI Technology

Understanding the Average Electron-Hole Pair-Creation Energy in Silicon and Germanium Based on Full-Band Monte Carlo Simulations

Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs

Depletion-All-Around Operation of the SOI Four-Gate Transistor

Defect dynamics in the presence of excess energetic carriers and high electric fields in wide-gap semiconductors

The Impact of Delta-Rays on Single-Event Upsets in Highly Scaled SOI SRAMs

Radiation Effects in AlGaN/GaN HEMTs

Effects of Bias on the Irradiation and Annealing Responses of 4H-SiC MOS Devices

Two-Photon Absorption Induced Single-Event Effects: Correlation Between Experiment and Simulation

Single-Event Charge Collection and Upset in 40-nm Dual- and Triple-Well Bulk CMOS SRAMs

Failure Estimates for SiC Power MOSFETs in Space Electronics

Single-Event Burnout Mechanisms in SiC Power MOSFETs

Total ionizing dose effects in shallow trench isolation oxides

Low-Frequency Noise Due to Iron Impurity Centers in GaN-Based HEMTs

Influence of LDD Spacers and H+ Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses

Bias Effects on Total Dose-Induced Degradation of Bipolar Linear Microcircuits for Switched Dose-Rate Irradiation

Effects of Interface Traps and Hydrogen on the Low-Frequency Noise of Irradiated MOS Devices

Experimental Characterization of Radiation-Induced Charge Sharing

The foundations of Shockley's equation for the average electron–hole-pair creation energy in semiconductors

Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices

Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses

Charge Transport in Vertical GaN Schottky Barrier Diodes: A Refined Physical Model for Conductive Dislocations

Radiation-Induced Transient Response Mechanisms in Photonic Waveguides

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

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