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Ionizing Radiation Effects in Electronics: From Memories to Imagers

1, 2018

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Influence of Bulk Doping and Halos on the TID Response of I/O and Core 150 nm nMOSFETs

Electronics (Basel), 2023-01, Vol.12 (3), p.543

2023

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Radiation tolerance study of a commercial 65 nm CMOS technology for high energy physics applications

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2016-09, Vol.831, p.265-268

2016

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Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.464-470

2017

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Present and Future Non-Volatile Memories for Space

IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3016-3039

2010

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TID Sensitivity of NAND Flash Memory Building Blocks

IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.1909-1913

2009

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Proton-Induced Upsets in SLC and MLC NAND Flash Memories

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4130-4135

2013

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Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Feature Size Dependence

IEEE transactions on nuclear science, 2010-08, Vol.57 (4), p.1835-1841

2010

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Comparison of radiation degradation induced by x-ray and 3-MeV protons in 65-nm CMOS transistors

Chinese physics B, 2016-09, Vol.25 (9), p.468-473

丁李利 Simone Gerardin Marta Bagatin Dario Bisello Serena Mattiazzo Alessandro Paccagnella

2016

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Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2824-2829

2011

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Low-Power, Subthreshold Reference Circuits for the Space Environment: Evaluated with γ-rays, X-rays, Protons and Heavy Ions

Electronics (Basel), 2019-05, Vol.8 (5), p.562

2019

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Impact of Tier Pitch Scaling on Heavy-ion Sensitivity of 3D NAND Flash Memories

IEEE transactions on nuclear science, 2024, p.1-1

2024

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Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters

IEEE transactions on electron devices, 2009-09, Vol.56 (9), p.2155-2159

2009

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Total Ionizing Dose Effects in 3D NAND Replacement Gate Flash Memory Cells

IEEE transactions on nuclear science, 2023, p.1-1

2023

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Effectiveness of TMR-Based Techniques to Mitigate Alpha-Induced SEU Accumulation in Commercial SRAM-Based FPGAs

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.1968-1973

2008

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TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

IEEE transactions on nuclear science, 2021-08, Vol.68 (8), p.1571-1578

2021

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Space and terrestrial radiation effects in flash memories

Semiconductor science and technology, 2017-03, Vol.32 (3), p.33003

2017

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Soft errors in floating gate memory cells: A review

Microelectronics and reliability, 2015-01, Vol.55 (1), p.24-30

2015

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Depth Dependence of Threshold Voltage Shift in 3-D Flash Memories Exposed to X-Rays

IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.659-664

2021

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Ionizing Radiation Effects in Electronics

2018

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Radiation Tolerant Multi-Bit Flip-Flop System With Embedded Timing Pre-Error Sensing

IEEE journal of solid-state circuits, 2022-09, Vol.57 (9), p.2878-2890

2022

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Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses

IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1302-1311

2020

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Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

IEEE transactions on nuclear science, 2022-03, Vol.69 (3), p.307-313

2022

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Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.82-90

2019

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DC response, low-frequency noise, and TID-induced mechanisms in 16-nm FinFETs for high-energy physics experiments

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2022-06, Vol.1033, p.166727, Article 166727

2022

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Ionizing Radiation Effects in Electronics: From Memories to Imagers

Influence of Bulk Doping and Halos on the TID Response of I/O and Core 150 nm nMOSFETs

Radiation tolerance study of a commercial 65 nm CMOS technology for high energy physics applications

Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells

Present and Future Non-Volatile Memories for Space

TID Sensitivity of NAND Flash Memory Building Blocks

Proton-Induced Upsets in SLC and MLC NAND Flash Memories

Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Feature Size Dependence

Comparison of radiation degradation induced by x-ray and 3-MeV protons in 65-nm CMOS transistors

Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells

Low-Power, Subthreshold Reference Circuits for the Space Environment: Evaluated with γ-rays, X-rays, Protons and Heavy Ions

Impact of Tier Pitch Scaling on Heavy-ion Sensitivity of 3D NAND Flash Memories

Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters

Total Ionizing Dose Effects in 3D NAND Replacement Gate Flash Memory Cells

Effectiveness of TMR-Based Techniques to Mitigate Alpha-Induced SEU Accumulation in Commercial SRAM-Based FPGAs

TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Space and terrestrial radiation effects in flash memories

Soft errors in floating gate memory cells: A review

Depth Dependence of Threshold Voltage Shift in 3-D Flash Memories Exposed to X-Rays

Ionizing Radiation Effects in Electronics

Radiation Tolerant Multi-Bit Flip-Flop System With Embedded Timing Pre-Error Sensing

Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses

Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses

DC response, low-frequency noise, and TID-induced mechanisms in 16-nm FinFETs for high-energy physics experiments

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