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Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

Applied physics letters, 2013-04, Vol.102 (17)

2013

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High Quality AlN Single Crystal Substrates for AlGaN-Based Devices

Materials science forum, 2018-06, Vol.924, p.923-926

2018

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Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation

Journal of electronic materials, 2014-04, Vol.43 (4), p.838-842

2014

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Influence of high-temperature processing on the surface properties of bulk AlN substrates

Journal of crystal growth, 2016-07, Vol.446, p.33-38

2016

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The growth and optical properties of large, high-quality AlN single crystals

Journal of applied physics, 2004-11, Vol.96 (10), p.5870-5876

2004

Volltextzugriff (PDF)

Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics

Materials science forum, 2012-05, Vol.717-720, p.1287-1290

2012

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Current-voltage characteristics of n ∕ n lateral polarity junctions in GaN

Applied physics letters, 2006-07, Vol.89 (5), p.052117-052117-3

2006

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Mapping Analysis of Crystalline Perfection and UV‐C Transparency of 2‐in. Aluminum Nitride Substrates Grown by Physical Vapor Transport

physica status solidi (b), 2023-12

2023

Volltextzugriff (PDF)

High-temperature electromechanical characterization of AlN single crystals

IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2015-10, Vol.62 (10), p.1880-1887

2015

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Growth kinetics and thermal stress in AlN bulk crystal growth

Journal of crystal growth, 2003-06, Vol.253 (1), p.326-339

2003

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Characterization of prismatic slip in PVT-grown AlN crystals

Journal of crystal growth, 2022-04, Vol.584 (C), p.126548, Article 126548

2022

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Optical nonlinear and electro‐optical coefficients in bulk aluminium nitride single crystals

physica status solidi (b), 2017-09, Vol.254 (9), p.n/a

2017

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X-Ray Topography Characterization of Large Diameter AlN Single Crystal Substrates

Materials science forum, 2020-07, Vol.1004, p.63-68

2020

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Hydride vapor phase epitaxy of Si-doped AlN layers using SiCl4 as a doping gas

Journal of crystal growth, 2020-09, Vol.545, p.125730, Article 125730

2020

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Hydride vapor phase epitaxy of Si -doped AlN layers using SiCl 4 as a doping gas

Journal of crystal growth, 2020-09, Vol.545

2020

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Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers

Physica status solidi. A, Applications and materials science, 2020-12, Vol.217 (24), p.n/a

2020

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Single crystal AlN substrates for AlGaN-based UV optoelectronics

2017 IEEE Photonics Society Summer Topical Meeting Series (SUM), 2017, p.31-32

2017

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Defect Generation Mechanisms in PVT-Grown AlN Single Crystal Boules

Materials science forum, 2013-01, Vol.740-742, p.91-94

2013

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Characterization of Threading Dislocations in PVT-Grown AIN Substrates via x-Ray Topography and Ray Tracing Simulation

Journal of electronic materials, 2014, Vol.43 (4), p.838-842

2014

Volltextzugriff (PDF)

Characterization of bulk grown GaN and AlN single crystal materials

Journal of crystal growth, 2006-01, Vol.287 (2), p.349-353

2006

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Design of an RF-Heated Bulk AlN Growth Reactor: Induction Heating and Heat Transfer Modeling

Crystal growth & design, 2005-07, Vol.5 (4), p.1491-1498

2005

Volltextzugriff (PDF)

Structural Characterization of Bulk AlN Single Crystals Grown from Self-Seeding and Seeding by SiC Substrates

Materials science forum, 2006-10, Vol.527-529, p.1521-1524

2006

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Polarity Control of LP-MOVPE GaN using N2 the Carrier Gas

MRS proceedings, 2005-12, Vol.892 (1), Article 2706

2005

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Grain Expansion and Subsequent Seeded Growth of AlN Single Crystals

MRS proceedings, 2004, Vol.831, Article E11.1

2004

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Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN

Journal of crystal growth, 2002-12, Vol.246 (3), p.271-280

2002

Volltextzugriff (PDF)

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Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

High Quality AlN Single Crystal Substrates for AlGaN-Based Devices

Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation

Influence of high-temperature processing on the surface properties of bulk AlN substrates

The growth and optical properties of large, high-quality AlN single crystals

Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics

Current-voltage characteristics of n ∕ n lateral polarity junctions in GaN

Mapping Analysis of Crystalline Perfection and UV‐C Transparency of 2‐in. Aluminum Nitride Substrates Grown by Physical Vapor Transport

High-temperature electromechanical characterization of AlN single crystals

Growth kinetics and thermal stress in AlN bulk crystal growth

Characterization of prismatic slip in PVT-grown AlN crystals

Optical nonlinear and electro‐optical coefficients in bulk aluminium nitride single crystals

X-Ray Topography Characterization of Large Diameter AlN Single Crystal Substrates

Hydride vapor phase epitaxy of Si-doped AlN layers using SiCl4 as a doping gas

Hydride vapor phase epitaxy of Si -doped AlN layers using SiCl 4 as a doping gas

Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers

Single crystal AlN substrates for AlGaN-based UV optoelectronics

Defect Generation Mechanisms in PVT-Grown AlN Single Crystal Boules

Characterization of Threading Dislocations in PVT-Grown AIN Substrates via x-Ray Topography and Ray Tracing Simulation

Characterization of bulk grown GaN and AlN single crystal materials

Design of an RF-Heated Bulk AlN Growth Reactor: Induction Heating and Heat Transfer Modeling

Structural Characterization of Bulk AlN Single Crystals Grown from Self-Seeding and Seeding by SiC Substrates

Polarity Control of LP-MOVPE GaN using N2 the Carrier Gas

Grain Expansion and Subsequent Seeded Growth of AlN Single Crystals

Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN

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