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Design of AlGaN-based quantum structures for low threshold UVC lasers

Journal of applied physics, 2019-12, Vol.126 (22)

2019

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High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

Applied physics letters, 2020-02, Vol.116 (8)

2020

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On the conduction mechanism in compositionally graded AlGaN

Applied physics letters, 2022-08, Vol.121 (7)

2022

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The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

Applied physics letters, 2014-05, Vol.104 (20)

2014

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229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

Applied physics letters, 2018-02, Vol.112 (8)

2018

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On the origin of the 265 nm absorption band in AlN bulk crystals

Applied physics letters, 2012-05, Vol.100 (19)

2012

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High p-conductivity in AlGaN enabled by polarization field engineering

Applied physics letters, 2023-04, Vol.122 (15)

2023

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Anderson transition in compositionally graded p-AlGaN

Journal of applied physics, 2023-11, Vol.134 (19)

2023

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Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

Applied physics letters, 2013-04, Vol.102 (17)

2013

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High conductivity and low activation energy in p-type AlGaN

Applied physics letters, 2023-02, Vol.122 (9)

2023

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Residual stress analysis of aluminum nitride piezoelectric micromachined ultrasonic transducers using Raman spectroscopy

Journal of applied physics, 2021-07, Vol.130 (4)

2021

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Weak localization and dimensional crossover in compositionally graded AlxGa1−xN

Applied physics letters, 2021-02, Vol.118 (8)

2021

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Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

Applied physics letters, 2013-10, Vol.103 (16)

2013

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High Quality AlN Single Crystal Substrates for AlGaN-Based Devices

Materials science forum, 2018-06, Vol.924, p.923-926

2018

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P-type silicon as hole supplier for nitride-based UVC LEDs

New journal of physics, 2019-02, Vol.21 (2), p.23011

2019

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Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs

AIP advances, 2019-08, Vol.9 (8), p.085128-085128-6

2019

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Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation

Journal of electronic materials, 2014-04, Vol.43 (4), p.838-842

2014

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Characterization of dislocation arrays in AlN single crystals grown by PVT

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1545-1547

2011

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Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics

Materials science forum, 2012-05, Vol.717-720, p.1287-1290

2012

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Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures

Applied physics letters, 2007-04, Vol.90 (15)

2007

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Performance and reliability of state-of-the-art commercial UVC light emitting diodes

Solid-state electronics, 2023-11, Vol.209, p.108775, Article 108775

2023

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Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Applied physics express, 2012-12, Vol.5 (12), p.122101-122101-3

2012

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Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

Applied physics express, 2022-10, Vol.15 (10), p.101004

2022

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Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Applied physics express, 2013-09, Vol.6 (9), p.092103-092103-3

2013

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Band-Bending of Ga-Polar GaN Interfaced with Al2O3 through Ultraviolet/Ozone Treatment

ACS applied materials & interfaces, 2017-05, Vol.9 (20), p.17576-17585

2017

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Design of AlGaN-based quantum structures for low threshold UVC lasers

High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

On the conduction mechanism in compositionally graded AlGaN

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

On the origin of the 265 nm absorption band in AlN bulk crystals

High p-conductivity in AlGaN enabled by polarization field engineering

Anderson transition in compositionally graded p-AlGaN

Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

High conductivity and low activation energy in p-type AlGaN

Residual stress analysis of aluminum nitride piezoelectric micromachined ultrasonic transducers using Raman spectroscopy

Weak localization and dimensional crossover in compositionally graded AlxGa1−xN

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

High Quality AlN Single Crystal Substrates for AlGaN-Based Devices

P-type silicon as hole supplier for nitride-based UVC LEDs

Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs

Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation

Characterization of dislocation arrays in AlN single crystals grown by PVT

Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics

Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures

Performance and reliability of state-of-the-art commercial UVC light emitting diodes

Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Band-Bending of Ga-Polar GaN Interfaced with Al2O3 through Ultraviolet/Ozone Treatment

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