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Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2006-12, Vol.53 (12), p.2932-2941

2006

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Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JN17-08JN17-4

2013

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Geometric Modeling of Thermal Resistance in GaN HEMTs on Silicon

IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5408-5414

2020

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Dynamic Behavior of Threshold Voltage and I D – V DS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6256-6261

2023

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Dynamic Behavior of Threshold Voltage and ID-VDS Kink in AlGaN/GaN HEMTs Due to Poole-Frenkel Effect

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6256-6261

2023

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Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results

Physica status solidi. A, Applications and materials science, 2022-12, Vol.219 (24), p.n/a

2022

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Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1396-1407

2024

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Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTs

IEEE transactions on electron devices, 2015-09, Vol.62 (9), p.2830-2836

2015

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V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.2051-2057

2024

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Impact of the Oxide Aperture Width on the Degradation of 845 Nm VCSELs for Silicon Photonics

IEEE journal of selected topics in quantum electronics, 2025-03, Vol.31 (2: Pwr. and Effic. Scaling in Semiconductor Lasers), p.1-9

2025

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Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.1-6

2023

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Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

IEEE transactions on electron devices, 2004-10, Vol.51 (10), p.1554-1561

2004

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Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs

Microelectronics and reliability, 2021-08, Vol.123, p.114199, Article 114199

2021

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On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion

IEEE transactions on electron devices, 2020-07, Vol.67 (7), p.2765-2770

2020

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Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells

IEEE journal of photovoltaics, 2023-11, Vol.13 (6), p.891-898

2023

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Reliability and failure analysis in power GaN-HEMTs: An overview

2017 IEEE International Reliability Physics Symposium (IRPS), 2017, p.3B-2.1-3B-2.8

2017

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Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm$ RF AIGaN/GaN HEMTs submitted to long-term life tests

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-5

2023

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Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress

Microelectronics and reliability, 2021-11, Vol.126, p.114318, Article 114318

2021

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Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs

Microelectronics and reliability, 2019-09, Vol.100-101, p.113388, Article 113388

2019

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Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.5B.2-1-5B.2-8

2024

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Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-10

2020

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Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry

2017 IEEE International Reliability Physics Symposium (IRPS), 2017, p.4B-5.1-4B-5.5

2017

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(Invited) Electric-Field and Thermally-Activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors

ECS transactions, 2011, Vol.41 (8), p.237-249

2011

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Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences

2014 44th European Solid State Device Research Conference (ESSDERC), 2014, p.381-384

2014

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A review of failure modes and mechanisms of GaN-based HEMTs

2007 IEEE International Electron Devices Meeting, 2007, p.381-384

2007

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Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions

Geometric Modeling of Thermal Resistance in GaN HEMTs on Silicon

Dynamic Behavior of Threshold Voltage and I D – V DS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect

Dynamic Behavior of Threshold Voltage and ID-VDS Kink in AlGaN/GaN HEMTs Due to Poole-Frenkel Effect

Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results

Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability

Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTs

V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis

Impact of the Oxide Aperture Width on the Degradation of 845 Nm VCSELs for Silicon Photonics

Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs

On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion

Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells

Reliability and failure analysis in power GaN-HEMTs: An overview

Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm$ RF AIGaN/GaN HEMTs submitted to long-term life tests

Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress

Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs

Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects

Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling

Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry

(Invited) Electric-Field and Thermally-Activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors

Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences

A review of failure modes and mechanisms of GaN-based HEMTs

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