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A K-Band Bulk Acoustic Wave Resonator Using Periodically Poled Al0.72Sc0.28N

IEEE electron device letters, 2023-07, Vol.44 (7), p.1-1

2023

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A Manufacturable AlScN Periodically Polarized Piezoelectric Film Bulk Acoustic Wave Resonator (AlScN P3F BAW) Operating in Overtone Mode at X and Ku Band

2023 IEEE/MTT-S International Microwave Symposium - IMS 2023, 2023, p.891-894

2023

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Highly Tunable Piezoelectric Resonators Using Al0.7Sc0.3N

Journal of microelectromechanical systems, 2024-04, Vol.33 (2), p.121-123

2024

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A High Quality Factor, 19-GHz Periodically Poled AlScN BAW Resonator Fabricated in a Commercial XBAW Process

IEEE transactions on electron devices, 2024-09, Vol.71 (9), p.5630-5637

2024

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Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry

IEEE transactions on electron devices, 2017-01, Vol.64 (1), p.78-83

2017

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High Performance Lamb Wave Resonator Operating in the 900 MHz ISM Band for Wireless Sensing Applications

2023 IEEE/MTT-S International Microwave Symposium - IMS 2023, 2023, p.1168-1171

2023

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Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors

Journal of applied physics, 2013-03, Vol.113 (9)

2013

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The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors

Journal of applied physics, 2013-10, Vol.114 (16)

2013

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Highly Tunable Piezoelectric Resonators Using Al 0.7 Sc 0.3 N

Journal of microelectromechanical systems, 2024-04, Vol.33 (2), p.121-123

2024

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XBAW, An Enabling Technology for Next Generation Resonators and Filter Solutions for 5G and Wi-Fi 6/6E/7 applications (Invited)

2022 International Electron Devices Meeting (IEDM), 2022, p.16.1.1-16.1.4

2022

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Electrical and structural dependence of operating temperature of AlGaN/GaN HEMTs

Microelectronics and reliability, 2013-06, Vol.53 (6), p.872-877

2013

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Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features

IEEE transactions on electron devices, 2013-06, Vol.60 (6), p.1898-1904

2013

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A K-Band Bulk Acoustic Wave Resonator Using Periodically Poled Al 0.72 Sc 0.28 N

IEEE electron device letters, 2023-07, Vol.44 (7), p.1196-1199

2023

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The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

IEEE transactions on electron devices, 2001-03, Vol.48 (3), p.560-566

2001

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The Impact of Bias Conditions on Self-Heating in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.159-162

2013

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A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

Active and Passive Electronic Components, 2012-01, Vol.2012 (2012), p.82-85

2012

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Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers

IEEE journal of solid-state circuits, 2000-09, Vol.35 (9), p.1285-1292

2000

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Analysis of Time Dependent Electric Field Degradation in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2014-09, Vol.61 (9), p.3145-3151

2014

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Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs

IEEE transactions on microwave theory and techniques, 2006-05, Vol.54 (5), p.2061-2067

2006

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Photoluminescence-Based Electron and Lattice Temperature Measurements in GaN-Based HEMTs

Journal of electronic materials, 2014-02, Vol.43 (2), p.341-347

2014

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Low loss, 3.7GHz wideband BAW filters, using high power single crystal AlN-on-SiC resonators

2017 IEEE MTT-S International Microwave Symposium (IMS), 2017, p.1476-1479

2017

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High Power, Wideband Single Crystal XBAW Technology for sub-6 GHz Micro RF Filter Applications

2018 IEEE International Ultrasonics Symposium (IUS), 2018, p.206-212

2018

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Fundamental failure mechanisms limiting maximum voltage operation in AlGaN/GaN HEMTs

2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p.3D.2.1-3D.2.6

2012

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Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing

Electronics (Basel), 2016-09, Vol.5 (3), p.32-32

2016

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Single crystal AlGaN bulk acoustic wave resonators on silicon substrates with high electromechanical coupling

2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2016, p.103-106

2016

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A K-Band Bulk Acoustic Wave Resonator Using Periodically Poled Al0.72Sc0.28N

A Manufacturable AlScN Periodically Polarized Piezoelectric Film Bulk Acoustic Wave Resonator (AlScN P3F BAW) Operating in Overtone Mode at X and Ku Band

Highly Tunable Piezoelectric Resonators Using Al0.7Sc0.3N

A High Quality Factor, 19-GHz Periodically Poled AlScN BAW Resonator Fabricated in a Commercial XBAW Process

Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry

High Performance Lamb Wave Resonator Operating in the 900 MHz ISM Band for Wireless Sensing Applications

Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors

The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors

Highly Tunable Piezoelectric Resonators Using Al 0.7 Sc 0.3 N

XBAW, An Enabling Technology for Next Generation Resonators and Filter Solutions for 5G and Wi-Fi 6/6E/7 applications (Invited)

Electrical and structural dependence of operating temperature of AlGaN/GaN HEMTs

Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features

A K-Band Bulk Acoustic Wave Resonator Using Periodically Poled Al 0.72 Sc 0.28 N

The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

The Impact of Bias Conditions on Self-Heating in AlGaN/GaN HEMTs

A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers

Analysis of Time Dependent Electric Field Degradation in AlGaN/GaN HEMTs

Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs

Photoluminescence-Based Electron and Lattice Temperature Measurements in GaN-Based HEMTs

Low loss, 3.7GHz wideband BAW filters, using high power single crystal AlN-on-SiC resonators

High Power, Wideband Single Crystal XBAW Technology for sub-6 GHz Micro RF Filter Applications

Fundamental failure mechanisms limiting maximum voltage operation in AlGaN/GaN HEMTs

Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing

Single crystal AlGaN bulk acoustic wave resonators on silicon substrates with high electromechanical coupling

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