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Estimated stocks of circumpolar permafrost carbon with quantified uncertainty ranges and identified data gaps

Biogeosciences, 2014-12, Vol.11 (23), p.6573-6593

2014

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Senior Citizens of India: Emerging Challenges and Concerns

1st Edition 2020, 2020

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AlGaN/GaN high electron mobility transistors with InGaN back-barriers

IEEE electron device letters, 2006-01, Vol.27 (1), p.13-15

2006

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IEEE_Xplore

High-power AlGaN/GaN HEMTs for Ka-band applications

IEEE electron device letters, 2005-11, Vol.26 (11), p.781-783

2005

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IEEE_Xplore

Alaskan soil carbon stocks: spatial variability and dependence on environmental factors

Biogeosciences, 2012-09, Vol.9 (9), p.3637-3645

2012

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High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

IEEE electron device letters, 2006-09, Vol.27 (9), p.713-715

2006

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IEEE_Xplore

The Demographic and Development Divide in India: A District-Level Analyses

1st ed. 2019., 2019

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Mercury(II) selective sensors based on AlGaN/GaN transistors

Analytica chimica acta, 2016-11, Vol.943, p.1-7

2016

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Scaling impacts on environmental controls and spatial heterogeneity of soil organic carbon stocks

Biogeosciences, 2015-07, Vol.12 (13), p.3993-4004

2015

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Sign language can reduce communication interference in Emergency Department

The American journal of emergency medicine, 2022-06, Vol.56, p.290-290

2022

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Afforestation Effects on Soil Carbon Storage in the United States: A Synthesis

Soil Science Society of America journal, 2013-05, Vol.77 (3), p.1035-1047

2013

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Environmental impact of coal industry and thermal power plants in India

Journal of environmental radioactivity, 2004, Vol.72 (1), p.35-40

Mishra, U.C

2004

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Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

Journal of crystal growth, 2008-03, Vol.310 (6), p.1124-1131

2008

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Watson–Crick Jumping Finite Automata: Combination, Comparison and Closure

Computer journal, 2022-05, Vol.65 (5), p.1178-1188

2022

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On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

Applied physics letters, 2016-03, Vol.108 (11)

2016

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SiNx/(Al,Ga)N interface barrier in N-polar III-nitride transistor structures studied by modulation spectroscopy

Scientific reports, 2020-07, Vol.10 (1), p.12099-12099, Article 12099

2020

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30-W/mm GaN HEMTs by field plate optimization

IEEE electron device letters, 2004-03, Vol.25 (3), p.117-119

2004

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IEEE_Xplore

Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2011-11, Vol.99 (22), p.223501-223501-3

2011

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High-performance E-mode AlGaN/GaN HEMTs

IEEE electron device letters, 2006-06, Vol.27 (6), p.428-430

2006

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IEEE_Xplore

Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition

Journal of applied physics, 2007-10, Vol.102 (8), p.083546-083546-6

2007

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Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films

Applied physics letters, 2021-07, Vol.119 (4)

2021

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Mountainous terrain of Nepal and lack of trauma radiography: A fatal duo

Radiography (London, England. 1995), 2023-10, Vol.29 (6), p.1068-1069

2023

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Modeling the impact of agricultural land use and management on US carbon budgets

Biogeosciences, 2015-04, Vol.12 (7), p.2119-2129

2015

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Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition

Semiconductor science and technology, 2020-09, Vol.35 (9), p.95002

2020

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Growth of high quality N-polar AlN ( 000 1 ¯ ) on Si(111) by plasma assisted molecular beam epitaxy

Applied physics letters, 2009-04, Vol.94 (15), p.151906-151906-3

2009

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Estimated stocks of circumpolar permafrost carbon with quantified uncertainty ranges and identified data gaps

Senior Citizens of India: Emerging Challenges and Concerns

AlGaN/GaN high electron mobility transistors with InGaN back-barriers

High-power AlGaN/GaN HEMTs for Ka-band applications

Alaskan soil carbon stocks: spatial variability and dependence on environmental factors

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

The Demographic and Development Divide in India: A District-Level Analyses

Mercury(II) selective sensors based on AlGaN/GaN transistors

Scaling impacts on environmental controls and spatial heterogeneity of soil organic carbon stocks

Sign language can reduce communication interference in Emergency Department

Afforestation Effects on Soil Carbon Storage in the United States: A Synthesis

Environmental impact of coal industry and thermal power plants in India

Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

Watson–Crick Jumping Finite Automata: Combination, Comparison and Closure

On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

SiNx/(Al,Ga)N interface barrier in N-polar III-nitride transistor structures studied by modulation spectroscopy

30-W/mm GaN HEMTs by field plate optimization

Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

High-performance E-mode AlGaN/GaN HEMTs

Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition

Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films

Mountainous terrain of Nepal and lack of trauma radiography: A fatal duo

Modeling the impact of agricultural land use and management on US carbon budgets

Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition

Growth of high quality N-polar AlN ( 000 1 ¯ ) on Si(111) by plasma assisted molecular beam epitaxy

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