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HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks

IEEE transactions on electron devices, 2015-08, Vol.62 (8), p.2494-2501

2015

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Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices

Journal of applied physics, 2014-06, Vol.115 (24)

2014

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Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAM

Scientific reports, 2013-10, Vol.3 (1), p.2929-2929, Article 2929

2013

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Quantum-size effects in hafnium-oxide resistive switching

Applied physics letters, 2013-05, Vol.102 (18), p.183505

2013

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A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

IEEE electron device letters, 2013-08, Vol.34 (8), p.999-1001

2013

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Physical aspects of low power synapses based on phase change memory devices

Journal of applied physics, 2012-09, Vol.112 (5)

2012

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Spiking Neural Networks Based on OxRAM Synapses for Real-Time Unsupervised Spike Sorting

Frontiers in neuroscience, 2016-11, Vol.10 (NOV), p.474-474

2016

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Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs-Part II: Atomistic and Electrical Modeling

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2490-2499

2011

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Electrical Behavior of Phase-Change Memory Cells Based on GeTe

IEEE electron device letters, 2010-05, Vol.31 (5), p.488-490

2010

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Memory and Energy Storage Dual Operation in Chalcogenide-Based CBRAM

IEEE journal of the Electron Devices Society, 2017-07, Vol.5 (4), p.283-287

2017

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Design and Architectural Assessment of 3-D Resistive Memory Technologies in FPGAs

IEEE transactions on nanotechnology, 2013-01, Vol.12 (1), p.40-50

2013

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Corrigendum: Spiking Neural Networks Based on OxRAM Synapses for Real-Time Unsupervised Spike Sorting

Frontiers in neuroscience, 2017-08, Vol.11, p.486-486

2017

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Bilayer Metal-Oxide Conductive Bridge Memory Technology for Improved Window Margin and Reliability

IEEE journal of the Electron Devices Society, 2016-09, Vol.4 (5), p.314-320

2016

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Cycle-to-Cycle Intrinsic RESET Statistics in -Based Unipolar RRAM Devices

IEEE electron device letters, 2013-05, Vol.34 (5), p.623-625

2013

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HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations

IEEE transactions on electron devices, 2016-01, Vol.63 (1), p.360-368

2016

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On the Origin of Low-Resistance State Retention Failure in HfO2-Based RRAM and Impact of Doping/Alloying

IEEE transactions on electron devices, 2015-12, Vol.62 (12), p.4029-4036

2015

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Phase Change and Magnetic Memories for Solid-State Drive Applications

Proceedings of the IEEE, 2017-09, Vol.105 (9), p.1790-1811

2017

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Experimental Investigation of 4-kb RRAM Arrays Programming Conditions Suitable for TCAM

IEEE transactions on very large scale integration (VLSI) systems, 2018-12, Vol.26 (12), p.2599-2607

2018

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Cycle-to-Cycle Intrinsic RESET Statistics in HfO2-Based Unipolar RRAM Devices

IEEE electron device letters, 2013-05, Vol.34 (5), p.623-625

2013

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Cell-to-Cell Fundamental Variability Limits Investigation in OxRRAM Arrays

IEEE electron device letters, 2018-01, Vol.39 (1), p.27-30

2018

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A Link Between CBRAM Performances and Material Microscopic Properties Based on Electrical Characterization and Atomistic Simulations

IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4479-4485

2017

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Charge Localization during Program and Retention in Nitrided Read Only Memory-Like Nonvolatile Memory Devices

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DD12-04DD12-5

2010

Volltextzugriff (PDF)

Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization

IEEE transactions on electron devices, 2015-11, Vol.62 (11), p.3482-3489

2015

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A Novel Programming Technique to Boost Low-Resistance State Performance in Ge-Rich GST Phase Change Memory

IEEE transactions on electron devices, 2014-05, Vol.61 (5), p.1246-1254

2014

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Resistive memory variability: A simplified trap-assisted tunneling model

Solid-state electronics, 2016-01, Vol.115, p.126-132

2016

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HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks

Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices

Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAM

Quantum-size effects in hafnium-oxide resistive switching

A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

Physical aspects of low power synapses based on phase change memory devices

Spiking Neural Networks Based on OxRAM Synapses for Real-Time Unsupervised Spike Sorting

Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs-Part II: Atomistic and Electrical Modeling

Electrical Behavior of Phase-Change Memory Cells Based on GeTe

Memory and Energy Storage Dual Operation in Chalcogenide-Based CBRAM

Design and Architectural Assessment of 3-D Resistive Memory Technologies in FPGAs

Corrigendum: Spiking Neural Networks Based on OxRAM Synapses for Real-Time Unsupervised Spike Sorting

Bilayer Metal-Oxide Conductive Bridge Memory Technology for Improved Window Margin and Reliability

Cycle-to-Cycle Intrinsic RESET Statistics in -Based Unipolar RRAM Devices

HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations

On the Origin of Low-Resistance State Retention Failure in HfO2-Based RRAM and Impact of Doping/Alloying

Phase Change and Magnetic Memories for Solid-State Drive Applications

Experimental Investigation of 4-kb RRAM Arrays Programming Conditions Suitable for TCAM

Cycle-to-Cycle Intrinsic RESET Statistics in HfO2-Based Unipolar RRAM Devices

Cell-to-Cell Fundamental Variability Limits Investigation in OxRRAM Arrays

A Link Between CBRAM Performances and Material Microscopic Properties Based on Electrical Characterization and Atomistic Simulations

Charge Localization during Program and Retention in Nitrided Read Only Memory-Like Nonvolatile Memory Devices

Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization

A Novel Programming Technique to Boost Low-Resistance State Performance in Ge-Rich GST Phase Change Memory

Resistive memory variability: A simplified trap-assisted tunneling model

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