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Electrical Behavior of Phase-Change Memory Cells Based on GeTe

IEEE electron device letters, 2010-05, Vol.31 (5), p.488-490

2010

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Carrier transport in HfO2/metal gate MOSFETs : Physical insight into critical parameters

IEEE transactions on electron devices, 2006-04, Vol.53 (4), p.759-768

2006

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Structural properties of tensile-strained Si layers grown on Si1-xGex virtual substrates (x=0.2, 0.3, 0.4 and 0.5)

Thin solid films, 2008-04, Vol.516 (12), p.4238-4246

2008

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SiC In-Situ Pre-Growth Etching: A Thermodynamic Study

Materials science forum, 2000-05, Vol.338-342, p.1041-1044

2000

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Development of an original model for the synthesis of silicon nanodots by Low Pressure Chemical Vapor Deposition

Chemical engineering journal (Lausanne, Switzerland : 1996), 2008-07, Vol.140 (1), p.600-608

2008

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Tensile-strained Si layers grown on Si0.6Ge0.4 and Si0.5Ge0.5 virtual substrates: II. Strain and defects

Semiconductor science and technology, 2007-04, Vol.22 (4), p.362-368

2007

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Influence of the synthesis conditions of silicon nanodots in an industrial low pressure chemical vapor deposition reactor

Applied surface science, 2008-03, Vol.254 (10), p.2927-2933

2008

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Wet cleaning and surface characterization of Si1-xGex virtual substrates after a CMP step

Applied surface science, 2008-08, Vol.254 (21), p.6793-6798

2008

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MOCVD fluorine free WSi x metal gate electrode on high- k dielectric for NMOS technology

Microelectronic engineering, 2009, Vol.86 (3), p.263-267

2009

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MOCVD fluorine free WSix metal gate electrode on high-k dielectric for NMOS technology

Microelectronic engineering, 2009-03, Vol.86 (3), p.263-267

2009

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Si/SiGe growth by low-energy plasma-enhanced chemical vapor deposition

Journal of crystal growth, 2006, Vol.286 (1), p.11-17

2006

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4H-SiC: a material for high temperature Hall sensor

Sensors and actuators. A, Physical, 2002-04, Vol.97, p.27-32

2002

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Advances in SiC Materials and Technology for Schottky Diode Applications

Materials science forum, 2002-04, Vol.389-393, p.1119-1124

2002

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Contribution of numerical simulation to silicon carbide bulk growth and epitaxy

Journal of physics. Condensed matter, 2004-05, Vol.16 (17), p.S1579-S1595

2004

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Study of the Wet Re-Oxidation Annealing of SiO2/4H-SiC (0001) Interface Properties by AR-XPS Measurements

Materials science forum, 2003, Vol.433-436, p.555-558

2003

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Contribution of numerical simulation to silicon carbide bulk growth and epitaxy : Silicon carbide

Journal of physics. Condensed matter, 2004, Vol.16 (17), p.S1579-S1595

2004

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Impact of TiN/HfO2 Integration on Carrier Mobility

MRS proceedings, 2006, Vol.917

2006

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Impact of TiN/HfO 2 Integration on Carrier Mobility

MRS proceedings, 2006, Vol.917, Article 0917-E04-04

2006

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Functionalization of 3-D Structures for Grafting of Biological Molecules

MRS proceedings, 2005, Vol.900, Article 0900-O09-16

2005

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Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization

Applied surface science, 2003-05, Vol.212-213, p.177-183

2003

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Epitaxial Growth of 6H-SiC by a Vapor Liquid Solid Method

Materials science forum, 2003, Vol.433-436, p.201-204

2003

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Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth

Materials science forum, 2004-01, Vol.457-460, p.731-734

2004

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Transport Investigation of Low-Nitrogen-Doped 6H-SiC Ion-Implantation vs. In Situ Doping

Materials science forum, 2003, Vol.433-436, p.399-402

2003

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Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC

Materials science forum, 2003, Vol.433-436, p.141-144

2003

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DC and Pulse Characterizations of (600V) 6H-SiC Schottky Diode Breakdown

Materials science forum, 2000-05, Vol.338-342, p.1215-1218

2000

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Electrical Behavior of Phase-Change Memory Cells Based on GeTe

Carrier transport in HfO2/metal gate MOSFETs : Physical insight into critical parameters

Structural properties of tensile-strained Si layers grown on Si1-xGex virtual substrates (x=0.2, 0.3, 0.4 and 0.5)

SiC In-Situ Pre-Growth Etching: A Thermodynamic Study

Development of an original model for the synthesis of silicon nanodots by Low Pressure Chemical Vapor Deposition

Tensile-strained Si layers grown on Si0.6Ge0.4 and Si0.5Ge0.5 virtual substrates: II. Strain and defects

Influence of the synthesis conditions of silicon nanodots in an industrial low pressure chemical vapor deposition reactor

Wet cleaning and surface characterization of Si1-xGex virtual substrates after a CMP step

MOCVD fluorine free WSi x metal gate electrode on high- k dielectric for NMOS technology

MOCVD fluorine free WSix metal gate electrode on high-k dielectric for NMOS technology

Si/SiGe growth by low-energy plasma-enhanced chemical vapor deposition

4H-SiC: a material for high temperature Hall sensor

Advances in SiC Materials and Technology for Schottky Diode Applications

Contribution of numerical simulation to silicon carbide bulk growth and epitaxy

Study of the Wet Re-Oxidation Annealing of SiO2/4H-SiC (0001) Interface Properties by AR-XPS Measurements

Contribution of numerical simulation to silicon carbide bulk growth and epitaxy : Silicon carbide

Impact of TiN/HfO2 Integration on Carrier Mobility

Impact of TiN/HfO 2 Integration on Carrier Mobility

Functionalization of 3-D Structures for Grafting of Biological Molecules

Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization

Epitaxial Growth of 6H-SiC by a Vapor Liquid Solid Method

Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth

Transport Investigation of Low-Nitrogen-Doped 6H-SiC Ion-Implantation vs. In Situ Doping

Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC

DC and Pulse Characterizations of (600V) 6H-SiC Schottky Diode Breakdown

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