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Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere

Applied physics letters, 2024-04, Vol.124 (18)

2024

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N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality

Physica. B, Condensed matter, 2020-03, Vol.580, p.411819, Article 411819

2020

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On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC

Journal of applied physics, 2022-02, Vol.131 (5)

2022

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Thermal conductivity of ScxAl1−xN and YxAl1−xN alloys

Applied physics letters, 2023-05, Vol.122 (18)

2023

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Thermal conductivity of ultra-wide bandgap thin layers – High Al-content AlGaN and β-Ga2O3

Physica. B, Condensed matter, 2020-02, Vol.579, p.411810, Article 411810

2020

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Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition

Vacuum, 2023-11, Vol.217, Article 112481

2023

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Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect

Applied physics letters, 2022-06, Vol.120 (25)

2022

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High-quality N-polar GaN optimization by multi-step temperature growth process

Journal of crystal growth, 2023-02, Vol.603, p.127002, Article 127002

2023

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On the thermal conductivity anisotropy in wurtzite GaN

AIP advances, 2023-09, Vol.13 (9), p.095009-095009-6

2023

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Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device‐Quality GaN Templates

Physica Status Solidi (B) Basic Research, 2020-04, Vol.257 (4), p.n/a

2020

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Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping

Physica status solidi. B, Basic research, 2017-08, Vol.254 (8), p.n/a

2017

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Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)

Journal of applied physics, 2023-11, Vol.134 (18)

2023

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Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect

Materials, 2024-07, Vol.17 (13), p.3343

2024

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Thermal conductivity of AlxGa1-xN (0 <= x <= 1) epitaxial layers

Physical review materials, 2022, Vol.6 (10)

2022

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Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors

Physical review. B, Condensed matter and materials physics, 2010-02, Vol.81 (8), p.085211, Article 085211

2010

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High rate growth of In2O3 at 1000 °C by halide vapor phase epitaxy

Japanese Journal of Applied Physics, 2016-10, Vol.55 (12)

2016

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Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect

APL materials, 2024-02, Vol.12 (2), p.021114-021114-8

2024

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Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

AIP advances, 2022-05, Vol.12 (5), p.055022-055022-7

2022

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Optical properties of functionalized GaN nanowires

Journal of applied physics, 2011-03, Vol.109 (5), p.053523-053523-6

2011

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Luminescence of Acceptors in Mg-Doped GaN

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JJ03-08JJ03-2

2013

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Internal structure of the neutral donor-bound exciton complex in cubic zinc-blende and wurtzite semiconductors

Physical review. B, Condensed matter and materials physics, 2007-02, Vol.75 (8), Article 085204

2007

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Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants

Journal of applied physics, 2017-06, Vol.121 (23)

2017

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Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies

Crystal growth & design, 2022-12, Vol.22 (12), p.7021-7030

2022

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Thermal conductivity of Sc x Al1− x N and Y x Al1− x N alloys

Applied physics letters, 2023-05, Vol.122 (18)

2023

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Low Al-content n-type Al x Ga 1 − x N layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition

Vacuum, 2023-11, Vol.217, p.112481, Article 112481

2023

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Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere

N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality

On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC

Thermal conductivity of ScxAl1−xN and YxAl1−xN alloys

Thermal conductivity of ultra-wide bandgap thin layers – High Al-content AlGaN and β-Ga2O3

Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition

Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect

High-quality N-polar GaN optimization by multi-step temperature growth process

On the thermal conductivity anisotropy in wurtzite GaN

Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device‐Quality GaN Templates

Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping

Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)

Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect

Thermal conductivity of AlxGa1-xN (0 <= x <= 1) epitaxial layers

Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors

High rate growth of In2O3 at 1000 °C by halide vapor phase epitaxy

Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect

Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

Optical properties of functionalized GaN nanowires

Luminescence of Acceptors in Mg-Doped GaN

Internal structure of the neutral donor-bound exciton complex in cubic zinc-blende and wurtzite semiconductors

Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants

Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies

Thermal conductivity of Sc x Al1− x N and Y x Al1− x N alloys

Low Al-content n-type Al x Ga 1 − x N layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition

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