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The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

Applied physics letters, 2014-05, Vol.104 (20)

2014

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On the origin of the 265 nm absorption band in AlN bulk crystals

Applied physics letters, 2012-05, Vol.100 (19)

2012

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Homoepitaxial growth of AlN on a 2-in.-diameter AlN single crystal substrate by hydride vapor phase epitaxy

Journal of crystal growth, 2020-06, Vol.540, p.125644, Article 125644

2020

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Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

Applied physics letters, 2013-10, Vol.103 (16)

2013

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The influence of point defects on the thermal conductivity of AlN crystals

Journal of applied physics, 2018-05, Vol.123 (18)

2018

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Russia's Passportization Policy toward Unrecognized Republics: Abkhazia, South Ossetia, and Transnistria

Problems of post-communism, 2019-05, Vol.66 (3), p.186-199

Nagashima, Toru

2019

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Influence of high-temperature processing on the surface properties of bulk AlN substrates

Journal of crystal growth, 2016-07, Vol.446, p.33-38

2016

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Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

Journal of crystal growth, 2010-09, Vol.312 (18), p.2530-2536

2010

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The Origin of Polycrystalline AlN Formation in Single Crystal AlN Substrate Grown by Hydride Vapor Phase Epitaxy

Journal of the Japanese Association for Crystal Growth, 2020, Vol.47(2), pp.47-2-06

2020

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Characterization of AlN single crystal fabricated by a novel growth technique, “pyrolytic transportation method”

Journal of crystal growth, 2010-09, Vol.312 (18), p.2527-2529

2010

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Relationship between Formation Conditions, Properties, and Crystallite Size of Boehmite

Journal of colloid and interface science, 2002-09, Vol.253 (2), p.308-314

2002

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Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substrates

Journal of crystal growth, 2012-07, Vol.350 (1), p.75-79

2012

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Vacancy defects in UV-transparent HVPE-AlN

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.405-407

2014

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Object classification integrating results of each scan line with low‐resolution LIDAR

IEEJ transactions on electrical and electronic engineering, 2019-08, Vol.14 (8), p.1203-1208

2019

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Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices

Physica status solidi. A, Applications and materials science, 2019-05, Vol.216 (10), p.n/a

2019

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Femtosecond Laser Slicing of Single Crystal AlN Layer Grown by Hydride Vapor Phase Epitaxy on an AlN Substrate Generated by Physical Vapor Transport

Journal of laser micro nanoengineering, 2024-02, Vol.19 (1), p.63-66

2024

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Polarity control and preparation of AlN nano-islands by hydride vapor phase epitaxy

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S444-S446

2009

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Hydride vapor phase epitaxy of Si -doped AlN layers using SiCl 4 as a doping gas

Journal of crystal growth, 2020-09, Vol.545

2020

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Hydride vapor phase epitaxy of Si-doped AlN layers using SiCl4 as a doping gas

Journal of crystal growth, 2020-09, Vol.545, p.125730, Article 125730

2020

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Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices (Phys. Status Solidi A 10∕2019)

Physica status solidi. A, Applications and materials science, 2019-05, Vol.216 (10), p.n/a

2019

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High-speed epitaxial growth of AlN above by hydride vapor phase epitaxy

Journal of crystal growth, 2007-03, Vol.300 (1), p.42-44

2007

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Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers

Physica status solidi. A, Applications and materials science, 2020-12, Vol.217 (24), p.n/a

2020

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Preparation of a Freestanding AlN Substrate by Hydride Vapor Phase Epitaxy at 1230 °C Using (111)Si as a Starting Substrate

Japanese Journal of Applied Physics, 2007-05, Vol.46 (5L), p.L389

2007

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Stimulated emission mechanism of aluminum nitride

Physical review. B, 2022-05, Vol.105 (20), Article 205206

2022

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The influence of point defects on the thermal conductivity of AlN crystals

Journal of applied physics, 2018-05, Vol.123 (18)

2018

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The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

On the origin of the 265 nm absorption band in AlN bulk crystals

Homoepitaxial growth of AlN on a 2-in.-diameter AlN single crystal substrate by hydride vapor phase epitaxy

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

The influence of point defects on the thermal conductivity of AlN crystals

Russia's Passportization Policy toward Unrecognized Republics: Abkhazia, South Ossetia, and Transnistria

Influence of high-temperature processing on the surface properties of bulk AlN substrates

Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

The Origin of Polycrystalline AlN Formation in Single Crystal AlN Substrate Grown by Hydride Vapor Phase Epitaxy

Characterization of AlN single crystal fabricated by a novel growth technique, “pyrolytic transportation method”

Relationship between Formation Conditions, Properties, and Crystallite Size of Boehmite

Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substrates

Vacancy defects in UV-transparent HVPE-AlN

Object classification integrating results of each scan line with low‐resolution LIDAR

Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices

Femtosecond Laser Slicing of Single Crystal AlN Layer Grown by Hydride Vapor Phase Epitaxy on an AlN Substrate Generated by Physical Vapor Transport

Polarity control and preparation of AlN nano-islands by hydride vapor phase epitaxy

Hydride vapor phase epitaxy of Si -doped AlN layers using SiCl 4 as a doping gas

Hydride vapor phase epitaxy of Si-doped AlN layers using SiCl4 as a doping gas

Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices (Phys. Status Solidi A 10∕2019)

High-speed epitaxial growth of AlN above by hydride vapor phase epitaxy

Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers

Preparation of a Freestanding AlN Substrate by Hydride Vapor Phase Epitaxy at 1230 °C Using (111)Si as a Starting Substrate

Stimulated emission mechanism of aluminum nitride

The influence of point defects on the thermal conductivity of AlN crystals

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