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Synthesis and Applications of III–V Nanowires

Chemical reviews, 2019-08, Vol.119 (15), p.9170-9220

2019

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Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n ––Ga2O3 drift layers grown by halide vapor phase epitaxy

Applied physics letters, 2016-03, Vol.108 (13), p.133503

2016

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Spatially resolved Hall effect measurement in a single semiconductor nanowire

Nature nanotechnology, 2012-11, Vol.7 (11), p.718-722

2012

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Investigation of halide vapor phase epitaxy of In2O3 on sapphire (0 0 0 1) substrates

Journal of crystal growth, 2021-06, Vol.563, p.126111, Article 126111

2021

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High In-content InGaN nano-pyramids: Tuning crystal homogeneity by optimized nucleation of GaN seeds

Journal of applied physics, 2018-01, Vol.123 (2)

2018

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Electron paramagnetic resonance and theoretical study of gallium vacancy in β-Ga2O3

Applied physics letters, 2020-07, Vol.117 (3)

2020

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InGaN Platelets: Synthesis and Applications toward Green and Red Light-Emitting Diodes

Nano letters, 2019-05, Vol.19 (5), p.2832-2839

2019

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Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence

Applied physics letters, 2015-12, Vol.107 (25), p.251106

2015

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Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

AIP advances, 2022-05, Vol.12 (5), p.055022-055022-7

2022

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Dependence of thermal stability of GaN on substrate orientation and off-cut

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD17

2019

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Growth of thick and high crystalline quality InGaN layers on GaN (0001¯) substrate using tri-halide vapor phase epitaxy

Journal of crystal growth, 2016-12, Vol.456, p.145-150

2016

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High rate InN growth by two-step precursor generation hydride vapor phase epitaxy

Journal of crystal growth, 2015-07, Vol.422, p.15-19

2015

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Influence of high-temperature processing on the surface properties of bulk AlN substrates

Journal of crystal growth, 2016-07, Vol.446, p.33-38

2016

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High rate growth of In2O3 at 1000 °C by halide vapor phase epitaxy

Japanese Journal of Applied Physics, 2016-10, Vol.55 (12)

2016

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Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties

Thin solid films, 2018-11, Vol.666, p.182-184

2018

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Investigation of NH3 input partial pressure for N-polarity InGaN growth on GaN substrates by tri-halide vapor phase epitaxy

Japanese Journal of Applied Physics, 2016-05, Vol.55 (5S), p.05FA01

2016

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Thermal and chemical stabilities of group-III sesquioxides in a flow of either N2 or H2

Japanese Journal of Applied Physics, 2016-11, Vol.55 (12)

2016

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Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors

Physical review. B, Condensed matter and materials physics, 2010-02, Vol.81 (8), p.085211, Article 085211

2010

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Defect related issues in the “current roll-off” in InGaN based light emitting diodes

Applied physics letters, 2007-10, Vol.91 (18), p.181103

2007

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Luminescence of Acceptors in Mg-Doped GaN

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JJ03-08JJ03-2

2013

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Nanowire-Based Visible Light Emitters, Present Status and Outlook

Semiconductor Nanowires : Properties and Applications - Properties and Applications, 2016, Vol.94, p.1-1

2016

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Electronic properties of the residual donor in unintentionally doped β-Ga2O3

Journal of applied physics, 2016-12, Vol.120 (23)

2016

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Electron effective mass in Sn-doped monoclinic single crystal β-gallium oxide determined by mid-infrared optical Hall effect

Applied physics letters, 2018-01, Vol.112 (1)

2018

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Internal structure of the neutral donor-bound exciton complex in cubic zinc-blende and wurtzite semiconductors

Physical review. B, Condensed matter and materials physics, 2007-02, Vol.75 (8), Article 085204

2007

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On the lattice parameters of GaN

Applied physics letters, 2007-07, Vol.91 (3), p.031911-031911-3

2007

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Synthesis and Applications of III–V Nanowires

Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n ––Ga2O3 drift layers grown by halide vapor phase epitaxy

Spatially resolved Hall effect measurement in a single semiconductor nanowire

Investigation of halide vapor phase epitaxy of In2O3 on sapphire (0 0 0 1) substrates

High In-content InGaN nano-pyramids: Tuning crystal homogeneity by optimized nucleation of GaN seeds

Electron paramagnetic resonance and theoretical study of gallium vacancy in β-Ga2O3

InGaN Platelets: Synthesis and Applications toward Green and Red Light-Emitting Diodes

Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence

Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

Dependence of thermal stability of GaN on substrate orientation and off-cut

Growth of thick and high crystalline quality InGaN layers on GaN (0001¯) substrate using tri-halide vapor phase epitaxy

High rate InN growth by two-step precursor generation hydride vapor phase epitaxy

Influence of high-temperature processing on the surface properties of bulk AlN substrates

High rate growth of In2O3 at 1000 °C by halide vapor phase epitaxy

Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties

Investigation of NH3 input partial pressure for N-polarity InGaN growth on GaN substrates by tri-halide vapor phase epitaxy

Thermal and chemical stabilities of group-III sesquioxides in a flow of either N2 or H2

Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors

Defect related issues in the “current roll-off” in InGaN based light emitting diodes

Luminescence of Acceptors in Mg-Doped GaN

Nanowire-Based Visible Light Emitters, Present Status and Outlook

Electronic properties of the residual donor in unintentionally doped β-Ga2O3

Electron effective mass in Sn-doped monoclinic single crystal β-gallium oxide determined by mid-infrared optical Hall effect

Internal structure of the neutral donor-bound exciton complex in cubic zinc-blende and wurtzite semiconductors

On the lattice parameters of GaN

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