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Light-matter coupling in large-area van der Waals superlattices

Nature nanotechnology, 2022-02, Vol.17 (2), p.182-189

2022

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Equilibrium critical thickness for misfit dislocations in III-nitrides

Journal of applied physics, 2008-12, Vol.104 (12), p.123514-123514-7

2008

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Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates

Journal of applied physics, 2011-01, Vol.109 (1), p.014502-014502-6

2011

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Defect‐Free Metal Deposition on 2D Materials via Inkjet Printing Technology

Advanced materials (Weinheim), 2022-12, Vol.34 (48), p.e2104138-n/a

2022

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Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JK10-08JK10-4

2013

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InGaN/GaN LEDs grown on Si(111): dependence of device performance on threading dislocation density and emission wavelength

Physica status solidi. C, 2010-07, Vol.7 (7-8), p.2168-2170

2010

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Wafer‐Scale Synthesis of Graphene on Sapphire: Toward Fab‐Compatible Graphene

Small (Weinheim an der Bergstrasse, Germany), 2019-12, Vol.15 (50), p.e1904906-n/a

2019

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Long-Range Propagation of Exciton-Polaritons in Large-Area 2D Semiconductor Monolayers

ACS nano, 2023-08, Vol.17 (15), p.14442-14448

2023

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Substrate-Induced Variances in Morphological and Structural Properties of MoS2 Grown by Chemical Vapor Deposition on Epitaxial Graphene and SiO2

ACS applied materials & interfaces, 2020-10, Vol.12 (40), p.45101-45110

2020

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Role of Surface Adsorbates on the Photoresponse of (MO)CVD-Grown Graphene–MoS2 Heterostructure Photodetectors

ACS applied materials & interfaces, 2022-08, Vol.14 (30), p.35184-35193

2022

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Substrate-Induced Variances in Morphological and Structural Properties of MoS 2 Grown by Chemical Vapor Deposition on Epitaxial Graphene and SiO 2

ACS applied materials & interfaces, 2020-10, Vol.12 (40), p.45101-45110

2020

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Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor deposition

Journal of crystal growth, 2023-04, Vol.608, p.127111, Article 127111

2023

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Near‐ and Far‐Field Observation of Phonon Polaritons in Wafer‐Scale Multilayer Hexagonal Boron Nitride Prepared by Chemical Vapor Deposition

Advanced materials (Weinheim), 2023-11, Vol.35 (44), p.e2302045-n/a

2023

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Role of Surface Adsorbates on the Photoresponse of (MO)CVD-Grown Graphene–MoS 2 Heterostructure Photodetectors

ACS applied materials & interfaces, 2022-08, Vol.14 (30), p.35184-35193

2022

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Selective Growth of van der Waals Heterostructures Enabled by Electron-Beam Irradiation

ACS applied materials & interfaces, 2023-07, Vol.15 (28), p.33838-33847

2023

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Fab‐Compatible Graphene: Wafer‐Scale Synthesis of Graphene on Sapphire: Toward Fab‐Compatible Graphene (Small 50/2019)

Small (Weinheim an der Bergstrasse, Germany), 2019-12, Vol.15 (50), p.n/a

2019

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Three-step, transfer-free growth of MoS 2 /WS 2 /graphene vertical van der Waals heterostructure

2d materials, 2022-04, Vol.9 (2), p.25030

2022

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Three-step, transfer-free growth of MoS2/WS2/graphene vertical van der Waals heterostructure

2d materials, 2022-04, Vol.9 (2)

2022

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MOVPE of Large-Scale MoS2/WS2, WS2/MoS2, WS2/Graphene and MoS2/Graphene 2D-2D Heterostructures for Optoelectronic Applications

MRS advances, 2020-01, Vol.5 (31-32), p.1625-1633

2020

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Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer

Physica status solidi. B. Basic research, 2010-07, Vol.247 (7), p.1753-1756

2010

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Optical and microstructural properties of semi-polar (11-22) InGaN/GaN quantum well structures

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S727-S730

2009

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Omvpe growth and characterisation of nitride semiconductor materials

McAleese, Clifford

2010

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(Invited) Recent Progress in Large Area MOCVD Growth of 2D Materials

Meeting abstracts (Electrochemical Society), 2021-10, Vol.MA2021-02 (12), p.606-606

2021

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Growth and characterization of semi-polar (11-22) GaN with in-situ SiNx interlayers

MRS proceedings, 2006, Vol.955

2006

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Light-matter coupling in large-area van der Waals superlattices

Equilibrium critical thickness for misfit dislocations in III-nitrides

Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates

Defect‐Free Metal Deposition on 2D Materials via Inkjet Printing Technology

Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures

InGaN/GaN LEDs grown on Si(111): dependence of device performance on threading dislocation density and emission wavelength

Wafer‐Scale Synthesis of Graphene on Sapphire: Toward Fab‐Compatible Graphene

Long-Range Propagation of Exciton-Polaritons in Large-Area 2D Semiconductor Monolayers

Substrate-Induced Variances in Morphological and Structural Properties of MoS2 Grown by Chemical Vapor Deposition on Epitaxial Graphene and SiO2

Role of Surface Adsorbates on the Photoresponse of (MO)CVD-Grown Graphene–MoS2 Heterostructure Photodetectors

Substrate-Induced Variances in Morphological and Structural Properties of MoS 2 Grown by Chemical Vapor Deposition on Epitaxial Graphene and SiO 2

Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor deposition

Near‐ and Far‐Field Observation of Phonon Polaritons in Wafer‐Scale Multilayer Hexagonal Boron Nitride Prepared by Chemical Vapor Deposition

Role of Surface Adsorbates on the Photoresponse of (MO)CVD-Grown Graphene–MoS 2 Heterostructure Photodetectors

Selective Growth of van der Waals Heterostructures Enabled by Electron-Beam Irradiation

Fab‐Compatible Graphene: Wafer‐Scale Synthesis of Graphene on Sapphire: Toward Fab‐Compatible Graphene (Small 50/2019)

Three-step, transfer-free growth of MoS 2 /WS 2 /graphene vertical van der Waals heterostructure

Case studies of electrical characterisation of graphene by terahertz time-domain spectroscopy

Three-step, transfer-free growth of MoS2/WS2/graphene vertical van der Waals heterostructure

MOVPE of Large-Scale MoS2/WS2, WS2/MoS2, WS2/Graphene and MoS2/Graphene 2D-2D Heterostructures for Optoelectronic Applications

Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer

Optical and microstructural properties of semi-polar (11-22) InGaN/GaN quantum well structures

Omvpe growth and characterisation of nitride semiconductor materials

(Invited) Recent Progress in Large Area MOCVD Growth of 2D Materials

Growth and characterization of semi-polar (11-22) GaN with in-situ SiNx interlayers

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