UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Machine Learning Predicts Laboratory Earthquakes

Geophysical research letters, 2017-09, Vol.44 (18), p.9276-9282

2017

Volltextzugriff (PDF)

Solid-State Lighting

MRS bulletin, 2008-04, Vol.33 (4), p.459-470

Humphreys, Colin J.

2008

Volltextzugriff (PDF)

X-ray diffraction analysis of cubic zincblende III-nitrides

Journal of physics. D, Applied physics, 2017-11, Vol.50 (43), p.433002

2017

Volltextzugriff (PDF)

InGaN as a Substrate for AC Photoelectrochemical Imaging

Sensors (Basel, Switzerland), 2019-10, Vol.19 (20), p.4386

2019

Volltextzugriff (PDF)

Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates

Journal of applied physics, 2014-01, Vol.115 (3)

2014

Volltextzugriff (PDF)

Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties

Nano letters, 2017-08, Vol.17 (8), p.4846-4852

2017

Volltextzugriff (PDF)

Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping

Nano letters, 2015-11, Vol.15 (11), p.7639-7643

2015

Volltextzugriff (PDF)

Optimizing GaN (112‾2) hetero-epitaxial templates grown on (101‾0) sapphire

Physica Status Solidi. B: Basic Solid State Physics, 2016-01, Vol.253 (1), p.61-66

2016

Volltextzugriff (PDF)

Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence

Journal of applied physics, 2016-08, Vol.120 (8)

2016

Volltextzugriff (PDF)

Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold

Journal of applied physics, 2016-10, Vol.120 (16), p.165704-13104

2016

Volltextzugriff (PDF)

Structural and Optical Emission Uniformity of m‑Plane InGaN Single Quantum Wells in Core–Shell Nanorods

Crystal growth & design, 2016-04, Vol.16 (4), p.1907-1916

2016

Volltextzugriff (PDF)

Low defect large area semi-polar (112) GaN grown on patterned (113) silicon

Physica Status Solidi, 2015-05, Vol.252 (5), p.1104-1108

2015

Volltextzugriff (PDF)

Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells

Applied physics letters, 2011-07, Vol.99 (2)

2011

Volltextzugriff (PDF)

Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCB09, Article SCCB09

2019

Volltextzugriff (PDF)

The Spatial Distribution of Threading Dislocations in Gallium Nitride Films

Advanced materials (Weinheim), 2009-10, Vol.21 (38-39), p.3941-3944

2009

Volltextzugriff (PDF)

Evolution of the m‑Plane Quantum Well Morphology and Composition within a GaN/InGaN Core–Shell Structure

Crystal growth & design, 2017-02, Vol.17 (2), p.474-482

2017

Volltextzugriff (PDF)

Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides

Journal of applied physics, 2013-10, Vol.114 (13)

2013

Volltextzugriff (PDF)

A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures

Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.866-872

2015

Volltextzugriff (PDF)

Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning

Scientific reports, 2016-04, Vol.6 (1), p.24862-24862, Article 24862

2016

Volltextzugriff (PDF)

Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures

Journal of physics. D, Applied physics, 2014-04, Vol.47 (13), p.1-6

2014

Volltextzugriff (PDF)

Optical studies of non-polar m-plane (11¯00) InGaN/GaN multi-quantum wells grown on freestanding bulk GaN

Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.965-970

2015

Volltextzugriff (PDF)

Solution-Processed Epitaxial Growth of Arbitrary Surface Nanopatterns on Hybrid Perovskite Monocrystalline Thin Films

ACS nano, 2020-09, Vol.14 (9), p.11029-11039

2020

Volltextzugriff (PDF)

X-ray characterisation of the basal stacking fault densities of (112&cmb.macr;2) GaN

CrystEngComm, 2021-09, Vol.23 (35), p.659-669

2021

Volltextzugriff (PDF)

The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption

Journal of applied physics, 2013-02, Vol.113 (6)

2013

Volltextzugriff (PDF)

Investigation of the GaN-on-GaAs interface for vertical power device applications

Journal of applied physics, 2014-07, Vol.116 (1)

2014

Volltextzugriff (PDF)

1 – 25 von 234

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(194)
Mit Volltextzugriff
(204)

Publikationsform

Sprache

Englisch
(226)
Japanisch
(49)
Deutsch
(1)

Erscheinungsjahr

n.n

Thema

Science & Technology
(158)
Physical Sciences
(111)
Physics
(101)
Physics, Applied
(79)
Technology
(46)
Materials Science
(37)
Life Sciences & Biomedicine
(30)
Materials Science, Multidisciplinary
(30)
Physics, Condensed Matter
(30)
Gallium Nitrides
(28)
Science & Technology - Other Topics
(27)
Indium Gallium Nitrides
(20)
Quantum Wells
(20)
Nanoscience & Nanotechnology
(19)
Ingan
(18)
Humans
(17)
Exact Sciences And Technology
(16)
Chemistry
(15)
Engineering
(13)
Engineering, Electrical & Electronic
(13)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Machine Learning Predicts Laboratory Earthquakes

Solid-State Lighting

X-ray diffraction analysis of cubic zincblende III-nitrides

InGaN as a Substrate for AC Photoelectrochemical Imaging

Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates

Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties

Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping

Optimizing GaN (112‾2) hetero-epitaxial templates grown on (101‾0) sapphire

Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence

Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold

Structural and Optical Emission Uniformity of m‑Plane InGaN Single Quantum Wells in Core–Shell Nanorods

Low defect large area semi-polar (112) GaN grown on patterned (113) silicon

Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells

Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

The Spatial Distribution of Threading Dislocations in Gallium Nitride Films

Evolution of the m‑Plane Quantum Well Morphology and Composition within a GaN/InGaN Core–Shell Structure

Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides

A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures

Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning

Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures

Optical studies of non-polar m-plane (11¯00) InGaN/GaN multi-quantum wells grown on freestanding bulk GaN

Solution-Processed Epitaxial Growth of Arbitrary Surface Nanopatterns on Hybrid Perovskite Monocrystalline Thin Films

X-ray characterisation of the basal stacking fault densities of (112&cmb.macr;2) GaN

The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption

Investigation of the GaN-on-GaAs interface for vertical power device applications

Suchergebnisse filtern