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State-of-the-art technologies of gallium oxide power devices

Journal of physics. D, Applied physics, 2017-07, Vol.50 (33), p.333002

2017

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1-kV vertical Ga2O3 field-plated Schottky barrier diodes

Applied physics letters, 2017-03, Vol.110 (10)

2017

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Current status of Ga2O3 power devices

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12)

2016

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Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n ––Ga2O3 drift layers grown by halide vapor phase epitaxy

Applied physics letters, 2016-03, Vol.108 (13), p.133503

2016

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Aperture-limited conduction and its possible mechanism in ion-implanted current aperture vertical β-Ga2O3 MOSFETs

Applied physics letters, 2021-01, Vol.118 (1)

2021

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Acceptor doping of β-Ga2O3 by Mg and N ion implantations

Applied physics letters, 2018-09, Vol.113 (10)

2018

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Investigation of halide vapor phase epitaxy of In2O3 on sapphire (0 0 0 1) substrates

Journal of crystal growth, 2021-06, Vol.563, p.126111, Article 126111

2021

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Investigation of etching characteristics of HVPE-grown c-In2O3 layers by hydrogen-environment anisotropic thermal etching

Journal of crystal growth, 2021-12, Vol.575, p.126338, Article 126338

2021

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Heterostructure formation of group-III sesquioxides via cation-exchange reactions with metal chloride gases

AIP advances, 2023-08, Vol.13 (8), p.085221-085221-8

2023

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Homoepitaxial growth of AlN on a 2-in.-diameter AlN single crystal substrate by hydride vapor phase epitaxy

Journal of crystal growth, 2020-06, Vol.540, p.125644, Article 125644

2020

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The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

Applied physics letters, 2014-05, Vol.104 (20)

2014

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On the origin of the 265 nm absorption band in AlN bulk crystals

Applied physics letters, 2012-05, Vol.100 (19)

2012

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Characterization of trap states in buried nitrogen-implanted β-Ga2O3

Applied physics letters, 2020-12, Vol.117 (24)

2020

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The influence of point defects on the thermal conductivity of AlN crystals

Journal of applied physics, 2018-05, Vol.123 (18)

2018

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Examination of MOVPE growth of β-Ga2O3 thin films by thermodynamic analysis and growth experiments

Journal of the Japanese Association for Crystal Growth, 2021, Vol.48(3), pp.48-3-05

2021

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Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth

Japanese Journal of Applied Physics, 2017-07, Vol.56 (7), p.078003

2017

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Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

Applied physics letters, 2013-10, Vol.103 (16)

2013

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Growth temperatures and the excess chlorine effect of N-Polar GaN growth via tri-halide vapor phase epitaxy

Journal of crystal growth, 2018-11, Vol.502, p.7-13

2018

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Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy

physica status solidi (b), 2020-04, Vol.257 (4), p.n/a

2020

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Lattice bow in thick, homoepitaxial GaN layers for vertical power devices

Journal of crystal growth, 2020-06, Vol.539, p.125643, Article 125643

2020

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Dependence of thermal stability of GaN on substrate orientation and off-cut

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD17

2019

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Growth of thick and high crystalline quality InGaN layers on GaN (0001¯) substrate using tri-halide vapor phase epitaxy

Journal of crystal growth, 2016-12, Vol.456, p.145-150

2016

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Thermodynamic analysis of (0001) and GaN metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics, 2017-07, Vol.56 (7), p.070304

2017

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Influence of high-temperature processing on the surface properties of bulk AlN substrates

Journal of crystal growth, 2016-07, Vol.446, p.33-38

2016

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Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

Journal of crystal growth, 2010-09, Vol.312 (18), p.2530-2536

2010

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State-of-the-art technologies of gallium oxide power devices

1-kV vertical Ga2O3 field-plated Schottky barrier diodes

Current status of Ga2O3 power devices

Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n ––Ga2O3 drift layers grown by halide vapor phase epitaxy

Aperture-limited conduction and its possible mechanism in ion-implanted current aperture vertical β-Ga2O3 MOSFETs

Acceptor doping of β-Ga2O3 by Mg and N ion implantations

Investigation of halide vapor phase epitaxy of In2O3 on sapphire (0 0 0 1) substrates

Investigation of etching characteristics of HVPE-grown c-In2O3 layers by hydrogen-environment anisotropic thermal etching

Heterostructure formation of group-III sesquioxides via cation-exchange reactions with metal chloride gases

Homoepitaxial growth of AlN on a 2-in.-diameter AlN single crystal substrate by hydride vapor phase epitaxy

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

On the origin of the 265 nm absorption band in AlN bulk crystals

Characterization of trap states in buried nitrogen-implanted β-Ga2O3

The influence of point defects on the thermal conductivity of AlN crystals

Examination of MOVPE growth of β-Ga2O3 thin films by thermodynamic analysis and growth experiments

Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

Growth temperatures and the excess chlorine effect of N-Polar GaN growth via tri-halide vapor phase epitaxy

Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy

Lattice bow in thick, homoepitaxial GaN layers for vertical power devices

Dependence of thermal stability of GaN on substrate orientation and off-cut

Growth of thick and high crystalline quality InGaN layers on GaN (0001¯) substrate using tri-halide vapor phase epitaxy

Thermodynamic analysis of (0001) and GaN metalorganic vapor phase epitaxy

Influence of high-temperature processing on the surface properties of bulk AlN substrates

Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

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